On the robustness of ultra-high voltage 4H-SiC IGBTs with an optimized retrograde p-well

Amit K. Tiwari; Samuel Perkins; N. Lophitis; M. Antoniou; Tanya Trajkovic; F. Udrea

doi:10.1109/DEMPED.2019.8864804

On the robustness of ultra-high voltage 4H-SiC IGBTs with an optimized retrograde p-well

Amit K. Tiwari, Samuel Perkins, N. Lophitis, M. Antoniou, Tanya Trajkovic, F. Udrea

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding › peer-review

6 Citations (Scopus)

110 Downloads (Pure)

Abstract

The robustness of ultra-high voltage (>10kV) SiC IGBTs comprising of an optimized retrograde p-well is investigated. Under extensive TCAD simulations, we show that in addition to offering a robust control on threshold voltage and eliminating punch-through, the retrograde is highly effective in terms of reducing the stress on the gate oxide of ultra-high voltage SiC IGBTs. We show that a 10 kV SiC IGBT comprising of the retrograde p-well exhibits a much-reduced peak electric field in the gate oxide when compared with the counterpart comprising of a conventional p-well. Using an optimized retrograde p-well with depth as shallow as 1 µm, the peak electric field in the gate oxide of a 10kV rated SiC IGBT can be reduced to below 2 MV.cm-1 , a prerequisite to achieve a highdegree of reliability in high-voltage power devices. We therefore propose that the retrograde p-well is highly promising for the development of >10kV SiC IGBTs.

Original language	English
Title of host publication	Proceedings of the 2019 IEEE 12th International Symposium on Diagnostics for Electrical Machines, Power Electronics and Drives, SDEMPED 2019
Publisher	IEEE
Pages	351-357
Number of pages	7
ISBN (Electronic)	978-1-7281-1832-1
ISBN (Print)	978-1-7281-1833-8
DOIs	https://doi.org/10.1109/DEMPED.2019.8864804
Publication status	E-pub ahead of print - 14 Oct 2019
Event	IEEE 12th International Symposium on Diagnostics for Electrical Machines, Power Electronics and Drives: SDEMPED - http://www.sdemped2019.com/en/index.html, Toulouse, France Duration: 27 Aug 2019 → 30 Aug 2019 http://www.sdemped2019.com/

Conference

Conference	IEEE 12th International Symposium on Diagnostics for Electrical Machines, Power Electronics and Drives
Abbreviated title	SDEMPED
Country/Territory	France
City	Toulouse
Period	27/08/19 → 30/08/19
Internet address	http://www.sdemped2019.com/

Keywords

Oxide breakdown
Punch-through
Retrograde p-well
SiC IGBT
Threshold voltage
Ultra-high voltage

ASJC Scopus subject areas

Energy Engineering and Power Technology
Electrical and Electronic Engineering
Mechanical Engineering
Safety, Risk, Reliability and Quality

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10.1109/DEMPED.2019.8864804

Post-PrintAccepted author manuscript, 1.19 MBLicence: Unspecified

Cite this

Tiwari, A. K., Perkins, S., Lophitis, N., Antoniou, M., Trajkovic, T., & Udrea, F. (2019). On the robustness of ultra-high voltage 4H-SiC IGBTs with an optimized retrograde p-well. In Proceedings of the 2019 IEEE 12th International Symposium on Diagnostics for Electrical Machines, Power Electronics and Drives, SDEMPED 2019 (pp. 351-357). Article 8864804 IEEE. Advance online publication. https://doi.org/10.1109/DEMPED.2019.8864804

On the robustness of ultra-high voltage 4H-SiC IGBTs with an optimized retrograde p-well. / Tiwari, Amit K.; Perkins, Samuel; Lophitis, N. et al.
Proceedings of the 2019 IEEE 12th International Symposium on Diagnostics for Electrical Machines, Power Electronics and Drives, SDEMPED 2019. IEEE, 2019. p. 351-357 8864804.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding › peer-review

Tiwari, AK, Perkins, S, Lophitis, N, Antoniou, M, Trajkovic, T & Udrea, F 2019, On the robustness of ultra-high voltage 4H-SiC IGBTs with an optimized retrograde p-well. in Proceedings of the 2019 IEEE 12th International Symposium on Diagnostics for Electrical Machines, Power Electronics and Drives, SDEMPED 2019., 8864804, IEEE, pp. 351-357, IEEE 12th International Symposium on Diagnostics for Electrical Machines, Power Electronics and Drives, Toulouse, France, 27/08/19. https://doi.org/10.1109/DEMPED.2019.8864804

Tiwari AK, Perkins S, Lophitis N, Antoniou M, Trajkovic T, Udrea F. On the robustness of ultra-high voltage 4H-SiC IGBTs with an optimized retrograde p-well. In Proceedings of the 2019 IEEE 12th International Symposium on Diagnostics for Electrical Machines, Power Electronics and Drives, SDEMPED 2019. IEEE. 2019. p. 351-357. 8864804 Epub 2019 Oct 14. doi: 10.1109/DEMPED.2019.8864804

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AU - Udrea, F.

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On the robustness of ultra-high voltage 4H-SiC IGBTs with an optimized retrograde p-well

Abstract

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Keywords

ASJC Scopus subject areas

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