On the robustness of ultra-high voltage 4H-SiC IGBTs with an optimized retrograde p-well

Amit K. Tiwari, Samuel Perkins, N. Lophitis, M. Antoniou, Tanya Trajkovic, F. Udrea

Research output: Chapter in Book/Report/Conference proceedingConference proceeding

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Abstract

The robustness of ultra-high voltage (>10kV) SiC IGBTs comprising of an optimized retrograde p-well is investigated. Under extensive TCAD simulations, we show that in addition to offering a robust control on threshold voltage and eliminating punch-through, the retrograde is highly effective in terms of reducing the stress on the gate oxide of ultra-high voltage SiC IGBTs. We show that a 10 kV SiC IGBT comprising of the retrograde p-well exhibits a much-reduced peak electric field in the gate oxide when compared with the counterpart comprising of a conventional p-well. Using an optimized retrograde p-well with depth as shallow as 1 µm, the peak electric field in the gate oxide of a 10kV rated SiC IGBT can be reduced to below 2 MV.cm-1 , a prerequisite to achieve a highdegree of reliability in high-voltage power devices. We therefore propose that the retrograde p-well is highly promising for the development of >10kV SiC IGBTs.
Original languageEnglish
Title of host publicationProceedings of the 2019 IEEE 12th International Symposium on Diagnostics for Electrical Machines, Power Electronics and Drives, SDEMPED 2019
PublisherIEEE
Pages351-357
Number of pages7
ISBN (Electronic)978-1-7281-1832-1
ISBN (Print)978-1-7281-1833-8
DOIs
Publication statusE-pub ahead of print - 14 Oct 2019
EventIEEE 12th International Symposium on Diagnostics for Electrical Machines, Power Electronics and Drives: SDEMPED - http://www.sdemped2019.com/en/index.html, Toulouse, France
Duration: 27 Aug 201930 Aug 2019
http://www.sdemped2019.com/

Conference

ConferenceIEEE 12th International Symposium on Diagnostics for Electrical Machines, Power Electronics and Drives
Abbreviated titleSDEMPED
CountryFrance
CityToulouse
Period27/08/1930/08/19
Internet address

Keywords

  • Oxide breakdown
  • Punch-through
  • Retrograde p-well
  • SiC IGBT
  • Threshold voltage
  • Ultra-high voltage

ASJC Scopus subject areas

  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering
  • Mechanical Engineering
  • Safety, Risk, Reliability and Quality

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  • Cite this

    Tiwari, A. K., Perkins, S., Lophitis, N., Antoniou, M., Trajkovic, T., & Udrea, F. (2019). On the robustness of ultra-high voltage 4H-SiC IGBTs with an optimized retrograde p-well. In Proceedings of the 2019 IEEE 12th International Symposium on Diagnostics for Electrical Machines, Power Electronics and Drives, SDEMPED 2019 (pp. 351-357). [8864804] IEEE. https://doi.org/10.1109/DEMPED.2019.8864804