On the robustness of ultra-high voltage 4H-SiC IGBTs with an optimized retrograde p-well

Amit K. Tiwari, Samuel Perkins, N. Lophitis, M. Antoniou, Tanya Trajkovic, F. Udrea

    Research output: Chapter in Book/Report/Conference proceedingConference proceedingpeer-review

    5 Citations (Scopus)
    93 Downloads (Pure)

    Abstract

    The robustness of ultra-high voltage (>10kV) SiC IGBTs comprising of an optimized retrograde p-well is investigated. Under extensive TCAD simulations, we show that in addition to offering a robust control on threshold voltage and eliminating punch-through, the retrograde is highly effective in terms of reducing the stress on the gate oxide of ultra-high voltage SiC IGBTs. We show that a 10 kV SiC IGBT comprising of the retrograde p-well exhibits a much-reduced peak electric field in the gate oxide when compared with the counterpart comprising of a conventional p-well. Using an optimized retrograde p-well with depth as shallow as 1 µm, the peak electric field in the gate oxide of a 10kV rated SiC IGBT can be reduced to below 2 MV.cm-1 , a prerequisite to achieve a highdegree of reliability in high-voltage power devices. We therefore propose that the retrograde p-well is highly promising for the development of >10kV SiC IGBTs.
    Original languageEnglish
    Title of host publicationProceedings of the 2019 IEEE 12th International Symposium on Diagnostics for Electrical Machines, Power Electronics and Drives, SDEMPED 2019
    PublisherIEEE
    Pages351-357
    Number of pages7
    ISBN (Electronic)978-1-7281-1832-1
    ISBN (Print)978-1-7281-1833-8
    DOIs
    Publication statusE-pub ahead of print - 14 Oct 2019
    EventIEEE 12th International Symposium on Diagnostics for Electrical Machines, Power Electronics and Drives: SDEMPED - http://www.sdemped2019.com/en/index.html, Toulouse, France
    Duration: 27 Aug 201930 Aug 2019
    http://www.sdemped2019.com/

    Conference

    ConferenceIEEE 12th International Symposium on Diagnostics for Electrical Machines, Power Electronics and Drives
    Abbreviated titleSDEMPED
    Country/TerritoryFrance
    CityToulouse
    Period27/08/1930/08/19
    Internet address

    Keywords

    • Oxide breakdown
    • Punch-through
    • Retrograde p-well
    • SiC IGBT
    • Threshold voltage
    • Ultra-high voltage

    ASJC Scopus subject areas

    • Energy Engineering and Power Technology
    • Electrical and Electronic Engineering
    • Mechanical Engineering
    • Safety, Risk, Reliability and Quality

    Fingerprint

    Dive into the research topics of 'On the robustness of ultra-high voltage 4H-SiC IGBTs with an optimized retrograde p-well'. Together they form a unique fingerprint.

    Cite this