On the Investigation of the “Anode Side” SuperJunction IGBT Design Concept

In this paper we present the “Anode Side” SuperJunction Trench Field Stop+ IGBT concept with drift region SuperJunction pillars placed at the anode side of the structure rather than the cathode side. The extent of the pillars towards the cathode side is shown to pose a trade-off between fabrication technology capabilities (and cost) versus the device performance, by extensive TCAD simulations. The proposed device structure simplifies the fabrication requirements by steering clear from the need to align the cathode side features with the SuperJunction pillars. It also provides an extra degree of freedom by decoupling the cathode design from the SuperJunction structure. Additionally, the presence of SuperJunction technology in the drift region of the “Anode Side” SJ Trench FS+ IGBT results in 20% reduction of on-state losses for the same switching energy losses or, up to 30% switching losses reduction for the same on-state voltage drop, compared to a 1.2kV breakdown rated conventional FS+ Trench IGBT device. The proposed structure also finds applications in Reverse Conducting IGBTs, where a reduced snapback can be achieved, and in MOS-Controlled Thyristor Devices.