On the development of the 3C-SiC Power Law and its applicability for the Evaluation of Termination Structures

Anastasios Arvanitopoulos, Samuel Perkins, Marina Antoniou, Fan Li, Mike Jennings, Konstantinos N. Gyftakis, Neophytos Lophitis

Research output: Chapter in Book/Report/Conference proceedingConference proceeding

Abstract

The 3C-Silicon Carbide (SiC) has been investigated as the suitable material for medium rated power device applications. Compared to growing 4H-SiC on hexagonal SiC, growing 3C-SiC on Si wafers is quite cost-effective and has recently resulted in epitaxial layers with thickness capable of supporting voltages of this magnitude. In this work, the power law of 3C-SiC is derived for the first time towards predicting the breakdown voltage of vertical Schottky Barrier Diodes (SBDs) based on this wide bandgap (WBG) semiconductor material. To ensure the predicted blocking capabilities from the 3C-SiC power law expression will be supported to the largest extend in fabricated SBDs, termination topologies are adjusted and investigated by performing extensive Technology Computer Aided Design (TCAD) simulations. A comprehensive map is developed to allow the decision on the termination concept for 3C-SiC-on-Si SBDs to be made based on efficiency and area requirement criteria.
Original languageEnglish
Title of host publicationInternational Symposium on Power Semiconductors (ISPS)
Place of PublicationPrague, Czech Republic
Publication statusPublished - Aug 2018
EventThe 14th International Seminar on Power Semiconductors (ISPS 2018) - Prague, Czech Republic
Duration: 29 Aug 201831 Aug 2018
http://technology.feld.cvut.cz:8080/xwiki/bin/view/ISPS2018/

Conference

ConferenceThe 14th International Seminar on Power Semiconductors (ISPS 2018)
Abbreviated titleISPS
CountryCzech Republic
CityPrague
Period29/08/1831/08/18
Internet address

Keywords

  • Silicon Carbide
  • 3C-SiC-on-Si
  • 3C-SiC power law
  • Termination topologies
  • TCAD
  • SBD

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