On the development of the 3C-SiC Power Law and its applicability for the Evaluation of Termination Structures

Anastasios Arvanitopoulos; Samuel Perkins; Marina Antoniou; Fan Li; Mike Jennings; Konstantinos N. Gyftakis; Neophytos Lophitis

On the development of the 3C-SiC Power Law and its applicability for the Evaluation of Termination Structures

Anastasios Arvanitopoulos, Samuel Perkins, Marina Antoniou, Fan Li, Mike Jennings, Konstantinos N. Gyftakis, Neophytos Lophitis

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding › peer-review

Abstract

The 3C-Silicon Carbide (SiC) has been investigated as the suitable material for medium rated power device applications. Compared to growing 4H-SiC on hexagonal SiC, growing 3C-SiC on Si wafers is quite cost-effective and has recently resulted in epitaxial layers with thickness capable of supporting voltages of this magnitude. In this work, the power law of 3C-SiC is derived for the first time towards predicting the breakdown voltage of vertical Schottky Barrier Diodes (SBDs) based on this wide bandgap (WBG) semiconductor material. To ensure the predicted blocking capabilities from the 3C-SiC power law expression will be supported to the largest extend in fabricated SBDs, termination topologies are adjusted and investigated by performing extensive Technology Computer Aided Design (TCAD) simulations. A comprehensive map is developed to allow the decision on the termination concept for 3C-SiC-on-Si SBDs to be made based on efficiency and area requirement criteria.

Original language	English
Title of host publication	International Symposium on Power Semiconductors (ISPS)
Place of Publication	Prague, Czech Republic
Publication status	Published - Aug 2018
Event	The 14th International Seminar on Power Semiconductors (ISPS 2018) - Prague, Czech Republic Duration: 29 Aug 2018 → 31 Aug 2018 http://technology.feld.cvut.cz:8080/xwiki/bin/view/ISPS2018/

Conference

Conference	The 14th International Seminar on Power Semiconductors (ISPS 2018)
Abbreviated title	ISPS
Country/Territory	Czech Republic
City	Prague
Period	29/08/18 → 31/08/18
Internet address	http://technology.feld.cvut.cz:8080/xwiki/bin/view/ISPS2018/

Keywords

Silicon Carbide
3C-SiC-on-Si
3C-SiC power law
Termination topologies
TCAD
SBD

Cite this

On the development of the 3C-SiC Power Law and its applicability for the Evaluation of Termination Structures. / Arvanitopoulos, Anastasios; Perkins, Samuel; Antoniou, Marina et al.
International Symposium on Power Semiconductors (ISPS). Prague, Czech Republic, 2018.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding › peer-review

Arvanitopoulos, A, Perkins, S, Antoniou, M, Li, F, Jennings, M, Gyftakis, KN & Lophitis, N 2018, On the development of the 3C-SiC Power Law and its applicability for the Evaluation of Termination Structures. in International Symposium on Power Semiconductors (ISPS). Prague, Czech Republic, The 14th International Seminar on Power Semiconductors (ISPS 2018), Prague, Czech Republic, 29/08/18.

@inproceedings{3f74dc89fd2c4061a76d110412e839a1,

title = "On the development of the 3C-SiC Power Law and its applicability for the Evaluation of Termination Structures",

abstract = "The 3C-Silicon Carbide (SiC) has been investigated as the suitable material for medium rated power device applications. Compared to growing 4H-SiC on hexagonal SiC, growing 3C-SiC on Si wafers is quite cost-effective and has recently resulted in epitaxial layers with thickness capable of supporting voltages of this magnitude. In this work, the power law of 3C-SiC is derived for the first time towards predicting the breakdown voltage of vertical Schottky Barrier Diodes (SBDs) based on this wide bandgap (WBG) semiconductor material. To ensure the predicted blocking capabilities from the 3C-SiC power law expression will be supported to the largest extend in fabricated SBDs, termination topologies are adjusted and investigated by performing extensive Technology Computer Aided Design (TCAD) simulations. A comprehensive map is developed to allow the decision on the termination concept for 3C-SiC-on-Si SBDs to be made based on efficiency and area requirement criteria.",

keywords = "Silicon Carbide, 3C-SiC-on-Si, 3C-SiC power law, Termination topologies, TCAD, SBD",

author = "Anastasios Arvanitopoulos and Samuel Perkins and Marina Antoniou and Fan Li and Mike Jennings and Gyftakis, {Konstantinos N.} and Neophytos Lophitis",

year = "2018",

month = aug,

language = "English",

booktitle = "International Symposium on Power Semiconductors (ISPS)",

note = "The 14th International Seminar on Power Semiconductors (ISPS 2018), ISPS ; Conference date: 29-08-2018 Through 31-08-2018",

url = "http://technology.feld.cvut.cz:8080/xwiki/bin/view/ISPS2018/",

}

TY - GEN

T1 - On the development of the 3C-SiC Power Law and its applicability for the Evaluation of Termination Structures

AU - Arvanitopoulos, Anastasios

AU - Perkins, Samuel

AU - Antoniou, Marina

AU - Li, Fan

AU - Jennings, Mike

AU - Gyftakis, Konstantinos N.

AU - Lophitis, Neophytos

PY - 2018/8

Y1 - 2018/8

N2 - The 3C-Silicon Carbide (SiC) has been investigated as the suitable material for medium rated power device applications. Compared to growing 4H-SiC on hexagonal SiC, growing 3C-SiC on Si wafers is quite cost-effective and has recently resulted in epitaxial layers with thickness capable of supporting voltages of this magnitude. In this work, the power law of 3C-SiC is derived for the first time towards predicting the breakdown voltage of vertical Schottky Barrier Diodes (SBDs) based on this wide bandgap (WBG) semiconductor material. To ensure the predicted blocking capabilities from the 3C-SiC power law expression will be supported to the largest extend in fabricated SBDs, termination topologies are adjusted and investigated by performing extensive Technology Computer Aided Design (TCAD) simulations. A comprehensive map is developed to allow the decision on the termination concept for 3C-SiC-on-Si SBDs to be made based on efficiency and area requirement criteria.

AB - The 3C-Silicon Carbide (SiC) has been investigated as the suitable material for medium rated power device applications. Compared to growing 4H-SiC on hexagonal SiC, growing 3C-SiC on Si wafers is quite cost-effective and has recently resulted in epitaxial layers with thickness capable of supporting voltages of this magnitude. In this work, the power law of 3C-SiC is derived for the first time towards predicting the breakdown voltage of vertical Schottky Barrier Diodes (SBDs) based on this wide bandgap (WBG) semiconductor material. To ensure the predicted blocking capabilities from the 3C-SiC power law expression will be supported to the largest extend in fabricated SBDs, termination topologies are adjusted and investigated by performing extensive Technology Computer Aided Design (TCAD) simulations. A comprehensive map is developed to allow the decision on the termination concept for 3C-SiC-on-Si SBDs to be made based on efficiency and area requirement criteria.

KW - Silicon Carbide

KW - 3C-SiC-on-Si

KW - 3C-SiC power law

KW - Termination topologies

KW - TCAD

KW - SBD

UR - http://technology.feld.cvut.cz/ISPS2018

M3 - Conference proceeding

BT - International Symposium on Power Semiconductors (ISPS)

CY - Prague, Czech Republic

T2 - The 14th International Seminar on Power Semiconductors (ISPS 2018)

Y2 - 29 August 2018 through 31 August 2018

ER -

On the development of the 3C-SiC Power Law and its applicability for the Evaluation of Termination Structures

Abstract

Conference

Keywords

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