Numerical modelling of stress-induced failure in sub-micron aluminium interconnects in VLSI systems

P. M. Igic, P. A. Mawby

Research output: Contribution to journalArticle

6 Citations (Scopus)


Stress-induced failure is investigated based on numerical modelling of the diffusional relaxation and groove growth in an aluminium line. A numerical model, based on surface and grain boundary diffusion, is improved and made to be very useful for time to failure estimation.

Original languageEnglish
Pages (from-to)255-261
Number of pages7
JournalSolid-State Electronics
Issue number2
Publication statusPublished - 5 Jan 1999
Externally publishedYes


ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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