Numerical modelling of stress-induced failure in sub-micron aluminium interconnects in VLSI systems

P. M. Igic; P. A. Mawby

doi:10.1016/S0038-1101(98)00252-4

Numerical modelling of stress-induced failure in sub-micron aluminium interconnects in VLSI systems

P. M. Igic, P. A. Mawby

Swansea University

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Stress-induced failure is investigated based on numerical modelling of the diffusional relaxation and groove growth in an aluminium line. A numerical model, based on surface and grain boundary diffusion, is improved and made to be very useful for time to failure estimation.

Original language	English
Pages (from-to)	255-261
Number of pages	7
Journal	Solid-State Electronics
Volume	43
Issue number	2
DOIs	https://doi.org/10.1016/S0038-1101(98)00252-4
Publication status	Published - 5 Jan 1999
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/S0038-1101(98)00252-4

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title = "Numerical modelling of stress-induced failure in sub-micron aluminium interconnects in VLSI systems",

abstract = "Stress-induced failure is investigated based on numerical modelling of the diffusional relaxation and groove growth in an aluminium line. A numerical model, based on surface and grain boundary diffusion, is improved and made to be very useful for time to failure estimation.",

author = "Igic, {P. M.} and Mawby, {P. A.}",

year = "1999",

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AU - Igic, P. M.

AU - Mawby, P. A.

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Y1 - 1999/1/5

N2 - Stress-induced failure is investigated based on numerical modelling of the diffusional relaxation and groove growth in an aluminium line. A numerical model, based on surface and grain boundary diffusion, is improved and made to be very useful for time to failure estimation.

AB - Stress-induced failure is investigated based on numerical modelling of the diffusional relaxation and groove growth in an aluminium line. A numerical model, based on surface and grain boundary diffusion, is improved and made to be very useful for time to failure estimation.

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DO - 10.1016/S0038-1101(98)00252-4

M3 - Article

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JO - Solid-State Electronics

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IS - 2

ER -

Numerical modelling of stress-induced failure in sub-micron aluminium interconnects in VLSI systems

Abstract

ASJC Scopus subject areas

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