Novel GaN Power Transistor Substrate Connection to Minimize Common Mode Noise

Ke Li; Paul Evans; Mark Johnson

doi:10.1109/WiPDAAsia.2018.8734589

Novel GaN Power Transistor Substrate Connection to Minimize Common Mode Noise

Ke Li
, Paul Evans
, Mark Johnson

University of Nottingham

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding › peer-review

5 Citations (Scopus)

Abstract

Fast switching of GaN device would increase power converter common mode current I_cm level. In this paper, it is proposed to connect substrate of the upper device in a half-bridge circuit to its drain terminal in order to decrease capacitive coupling between device switching node and ground plane so as to decrease I_cm level. Device static and dynamic ON-state resistance and its inter-electrode capacitance are compared under different substrate connections, which shows that device static and dynamic characteristics do not noticeably degrade when connecting its substrate to drain terminal than conventional connection to its source terminal. Furthermore, I_cm magnitude is reduced over the whole 150kHz to 30MHz conducted EMI frequency range, with 2dB-3dB reduced level between 150kHz to 3MHz and more than 5dB reduced level around 20MHz when device switches at 100V and 200V with switching frequency of 100kHz.

Original language	English
Title of host publication	2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	213-219
Number of pages	7
ISBN (Electronic)	9781538643921
DOIs	https://doi.org/10.1109/WiPDAAsia.2018.8734589
Publication status	Published - 13 Jun 2018
Externally published	Yes
Event	1st Workshop on Wide Bandgap Power Devices and Applications in Asia - Xi'an, China Duration: 16 May 2018 → 18 May 2018

Publication series

Name	2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018

Workshop

Workshop	1st Workshop on Wide Bandgap Power Devices and Applications in Asia
Abbreviated title	WiPDA Asia 2018
Country/Territory	China
City	Xi'an
Period	16/05/18 → 18/05/18

Funding

This work was funded by the UK Engineering and Physical Sciences Research Council (EPSRC) through research grant [EP/K014471/1]. The authors would like to thank all the partners of the project Silicon Compatible GaN Power Electronics for technical discussions, especially that from Prof. Michael Uren and Dr. Serge Karboyan of University of Bristol.

Keywords

Common mode current
dynamic ON-state resistance
EMI
GaN-HEMT
inter-electrode capacitance
substrate connection

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Control and Optimization
Energy Engineering and Power Technology
Electrical and Electronic Engineering

Access to Document

10.1109/WiPDAAsia.2018.8734589

Cite this

Li, K., Evans, P., & Johnson, M. (2018). Novel GaN Power Transistor Substrate Connection to Minimize Common Mode Noise. In 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia (pp. 213-219). Article 8734589 (2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/WiPDAAsia.2018.8734589

Novel GaN Power Transistor Substrate Connection to Minimize Common Mode Noise. / Li, Ke; Evans, Paul; Johnson, Mark.
2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia . Institute of Electrical and Electronics Engineers Inc., 2018. p. 213-219 8734589 (2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018).

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding › peer-review

Li, K, Evans, P & Johnson, M 2018, Novel GaN Power Transistor Substrate Connection to Minimize Common Mode Noise. in 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia ., 8734589, 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018, Institute of Electrical and Electronics Engineers Inc., pp. 213-219, 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, Xi'an, China, 16/05/18. https://doi.org/10.1109/WiPDAAsia.2018.8734589

Li K, Evans P, Johnson M. Novel GaN Power Transistor Substrate Connection to Minimize Common Mode Noise. In 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia . Institute of Electrical and Electronics Engineers Inc. 2018. p. 213-219. 8734589. (2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018). doi: 10.1109/WiPDAAsia.2018.8734589

Li, Ke ; Evans, Paul ; Johnson, Mark. / Novel GaN Power Transistor Substrate Connection to Minimize Common Mode Noise. 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia . Institute of Electrical and Electronics Engineers Inc., 2018. pp. 213-219 (2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018).

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title = "Novel GaN Power Transistor Substrate Connection to Minimize Common Mode Noise",

abstract = "Fast switching of GaN device would increase power converter common mode current Icm level. In this paper, it is proposed to connect substrate of the upper device in a half-bridge circuit to its drain terminal in order to decrease capacitive coupling between device switching node and ground plane so as to decrease Icm level. Device static and dynamic ON-state resistance and its inter-electrode capacitance are compared under different substrate connections, which shows that device static and dynamic characteristics do not noticeably degrade when connecting its substrate to drain terminal than conventional connection to its source terminal. Furthermore, Icm magnitude is reduced over the whole 150kHz to 30MHz conducted EMI frequency range, with 2dB-3dB reduced level between 150kHz to 3MHz and more than 5dB reduced level around 20MHz when device switches at 100V and 200V with switching frequency of 100kHz.",

keywords = "Common mode current, dynamic ON-state resistance, EMI, GaN-HEMT, inter-electrode capacitance, substrate connection",

author = "Ke Li and Paul Evans and Mark Johnson",

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AU - Evans, Paul

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N2 - Fast switching of GaN device would increase power converter common mode current Icm level. In this paper, it is proposed to connect substrate of the upper device in a half-bridge circuit to its drain terminal in order to decrease capacitive coupling between device switching node and ground plane so as to decrease Icm level. Device static and dynamic ON-state resistance and its inter-electrode capacitance are compared under different substrate connections, which shows that device static and dynamic characteristics do not noticeably degrade when connecting its substrate to drain terminal than conventional connection to its source terminal. Furthermore, Icm magnitude is reduced over the whole 150kHz to 30MHz conducted EMI frequency range, with 2dB-3dB reduced level between 150kHz to 3MHz and more than 5dB reduced level around 20MHz when device switches at 100V and 200V with switching frequency of 100kHz.

AB - Fast switching of GaN device would increase power converter common mode current Icm level. In this paper, it is proposed to connect substrate of the upper device in a half-bridge circuit to its drain terminal in order to decrease capacitive coupling between device switching node and ground plane so as to decrease Icm level. Device static and dynamic ON-state resistance and its inter-electrode capacitance are compared under different substrate connections, which shows that device static and dynamic characteristics do not noticeably degrade when connecting its substrate to drain terminal than conventional connection to its source terminal. Furthermore, Icm magnitude is reduced over the whole 150kHz to 30MHz conducted EMI frequency range, with 2dB-3dB reduced level between 150kHz to 3MHz and more than 5dB reduced level around 20MHz when device switches at 100V and 200V with switching frequency of 100kHz.

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KW - dynamic ON-state resistance

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Novel GaN Power Transistor Substrate Connection to Minimize Common Mode Noise

Abstract

Publication series

Workshop

Funding

Keywords

ASJC Scopus subject areas

Access to Document

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