Novel GaN Power Transistor Substrate Connection to Minimize Common Mode Noise

Ke Li, Paul Evans, Mark Johnson

Research output: Chapter in Book/Report/Conference proceedingConference proceeding

Abstract

Fast switching of GaN device would increase power converter common mode current Icm level. In this paper, it is proposed to connect substrate of the upper device in a half-bridge circuit to its drain terminal in order to decrease capacitive coupling between device switching node and ground plane so as to decrease Icm level. Device static and dynamic ON-state resistance and its inter-electrode capacitance are compared under different substrate connections, which shows that device static and dynamic characteristics do not noticeably degrade when connecting its substrate to drain terminal than conventional connection to its source terminal. Furthermore, Icm magnitude is reduced over the whole 150kHz to 30MHz conducted EMI frequency range, with 2dB-3dB reduced level between 150kHz to 3MHz and more than 5dB reduced level around 20MHz when device switches at 100V and 200V with switching frequency of 100kHz.

Original languageEnglish
Title of host publication2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages213-219
Number of pages7
ISBN (Electronic)9781538643921
DOIs
Publication statusPublished - 13 Jun 2018
Externally publishedYes
Event1st Workshop on Wide Bandgap Power Devices and Applications in Asia - Xi'an, China
Duration: 16 May 201818 May 2018

Publication series

Name2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018

Workshop

Workshop1st Workshop on Wide Bandgap Power Devices and Applications in Asia
Abbreviated title WiPDA Asia 2018
CountryChina
CityXi'an
Period16/05/1818/05/18

Keywords

  • Common mode current
  • dynamic ON-state resistance
  • EMI
  • GaN-HEMT
  • inter-electrode capacitance
  • substrate connection

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Control and Optimization
  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering

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  • Cite this

    Li, K., Evans, P., & Johnson, M. (2018). Novel GaN Power Transistor Substrate Connection to Minimize Common Mode Noise. In 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia (pp. 213-219). [8734589] (2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/WiPDAAsia.2018.8734589