Novel Approach Toward Plasma Enhancement in Trench-Insulated Gate Bipolar Transistors

M. Antoniou, Neophytis Lophitis, F. Bauer, I. Nistor, M. Bellini, M. Rahimo, G. Amaratunga, F. Udrea

Research output: Contribution to journalArticle

  • 7 Citations

Abstract

In this letter, a trench-insulated gate bipolar transistor (IGBT) design with local charge compensating layers featured at the cathode of the device is presented and analyzed. The superjunction or reduced surface effect proves to be very effective in overcoming the inherited ON-state versus breakdown tradeoff appearing in conventional devices, such as the soft punch through plus or field stop plus (FS+) IGBTs. This design enhances the ON-state performance of the FS+IGBT by increasing the plasma concentration at the cathode side without affecting either the switching performance or the breakdown rating.
LanguageEnglish
Pages823-825
Number of pages3
JournalElectron Device Letters
Volume36
Issue number8
DOIs
StatePublished - 15 May 2015

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Insulated gate bipolar transistors (IGBT)
Plasmas
Cathodes

Bibliographical note

© 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

Keywords

  • insulated gate bipolar transistors
  • plasma applications
  • power MOSFET
  • power bipolar transistors
  • semiconductor device breakdown
  • breakdown rating
  • cathode
  • local charge compensating layers
  • plasma enhancement
  • superjunction power MOSFET
  • trench-IGBT
  • trench-insulated gate bipolar transistors
  • Insulated Gate Bipolar Transistor (IGBT)
  • Insulated gate bipolar transistor (IGBT)
  • technology trade-off
  • Cathodes
  • Doping
  • Electric breakdown
  • Insulated gate bipolar transistors
  • Logic gates
  • Performance evaluation
  • Switches

Cite this

Antoniou, M., Lophitis, N., Bauer, F., Nistor, I., Bellini, M., Rahimo, M., ... Udrea, F. (2015). Novel Approach Toward Plasma Enhancement in Trench-Insulated Gate Bipolar Transistors. Electron Device Letters, 36(8), 823-825. DOI: 10.1109/LED.2015.2433894

Novel Approach Toward Plasma Enhancement in Trench-Insulated Gate Bipolar Transistors. / Antoniou, M.; Lophitis, Neophytis; Bauer, F.; Nistor, I.; Bellini, M.; Rahimo, M.; Amaratunga, G.; Udrea, F.

In: Electron Device Letters, Vol. 36, No. 8, 15.05.2015, p. 823-825.

Research output: Contribution to journalArticle

Antoniou, M, Lophitis, N, Bauer, F, Nistor, I, Bellini, M, Rahimo, M, Amaratunga, G & Udrea, F 2015, 'Novel Approach Toward Plasma Enhancement in Trench-Insulated Gate Bipolar Transistors' Electron Device Letters, vol. 36, no. 8, pp. 823-825. DOI: 10.1109/LED.2015.2433894
Antoniou M, Lophitis N, Bauer F, Nistor I, Bellini M, Rahimo M et al. Novel Approach Toward Plasma Enhancement in Trench-Insulated Gate Bipolar Transistors. Electron Device Letters. 2015 May 15;36(8):823-825. Available from, DOI: 10.1109/LED.2015.2433894
Antoniou, M. ; Lophitis, Neophytis ; Bauer, F. ; Nistor, I. ; Bellini, M. ; Rahimo, M. ; Amaratunga, G. ; Udrea, F./ Novel Approach Toward Plasma Enhancement in Trench-Insulated Gate Bipolar Transistors. In: Electron Device Letters. 2015 ; Vol. 36, No. 8. pp. 823-825
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