Novel Approach Toward Plasma Enhancement in Trench-Insulated Gate Bipolar Transistors

M. Antoniou; Neophytis Lophitis; F. Bauer; I. Nistor; M. Bellini; M. Rahimo; G. Amaratunga; F. Udrea

doi:10.1109/LED.2015.2433894

Novel Approach Toward Plasma Enhancement in Trench-Insulated Gate Bipolar Transistors

M. Antoniou, Neophytis Lophitis, F. Bauer, I. Nistor, M. Bellini, M. Rahimo, G. Amaratunga, F. Udrea

Research output: Contribution to journal › Article › peer-review

33 Citations (Scopus)

209 Downloads (Pure)

Abstract

In this letter, a trench-insulated gate bipolar transistor (IGBT) design with local charge compensating layers featured at the cathode of the device is presented and analyzed. The superjunction or reduced surface effect proves to be very effective in overcoming the inherited ON-state versus breakdown tradeoff appearing in conventional devices, such as the soft punch through plus or field stop plus (FS+) IGBTs. This design enhances the ON-state performance of the FS+IGBT by increasing the plasma concentration at the cathode side without affecting either the switching performance or the breakdown rating.

Original language	English
Pages (from-to)	823-825
Number of pages	3
Journal	Electron device letters
Volume	36
Issue number	8
Early online date	15 May 2015
DOIs	https://doi.org/10.1109/LED.2015.2433894
Publication status	Published - Aug 2015

Bibliographical note

© 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

Keywords

insulated gate bipolar transistors
plasma applications
power MOSFET
power bipolar transistors
semiconductor device breakdown
breakdown rating
cathode
local charge compensating layers
plasma enhancement
superjunction power MOSFET
trench-IGBT
trench-insulated gate bipolar transistors
Insulated Gate Bipolar Transistor (IGBT)
Insulated gate bipolar transistor (IGBT)
technology trade-off
Cathodes
Doping
Electric breakdown
Insulated gate bipolar transistors
Logic gates
Performance evaluation
Switches

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10.1109/LED.2015.2433894

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@article{7cf7b3b828ca4f15ba156ff6fa339c8f,

title = "Novel Approach Toward Plasma Enhancement in Trench-Insulated Gate Bipolar Transistors",

abstract = "In this letter, a trench-insulated gate bipolar transistor (IGBT) design with local charge compensating layers featured at the cathode of the device is presented and analyzed. The superjunction or reduced surface effect proves to be very effective in overcoming the inherited ON-state versus breakdown tradeoff appearing in conventional devices, such as the soft punch through plus or field stop plus (FS+) IGBTs. This design enhances the ON-state performance of the FS+IGBT by increasing the plasma concentration at the cathode side without affecting either the switching performance or the breakdown rating.",

keywords = "insulated gate bipolar transistors, plasma applications, power MOSFET, power bipolar transistors, semiconductor device breakdown, breakdown rating, cathode, local charge compensating layers, plasma enhancement, superjunction power MOSFET, trench-IGBT, trench-insulated gate bipolar transistors, Insulated Gate Bipolar Transistor (IGBT), Insulated gate bipolar transistor (IGBT), technology trade-off, Cathodes, Doping, Electric breakdown, Insulated gate bipolar transistors, Logic gates, Performance evaluation, Switches",

author = "M. Antoniou and Neophytis Lophitis and F. Bauer and I. Nistor and M. Bellini and M. Rahimo and G. Amaratunga and F. Udrea",

note = "{\textcopyright} 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.",

year = "2015",

month = aug,

doi = "10.1109/LED.2015.2433894",

language = "English",

volume = "36",

pages = "823--825",

journal = "Electron device letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers",

number = "8",

}

TY - JOUR

T1 - Novel Approach Toward Plasma Enhancement in Trench-Insulated Gate Bipolar Transistors

AU - Antoniou, M.

AU - Lophitis, Neophytis

AU - Bauer, F.

AU - Nistor, I.

AU - Bellini, M.

AU - Rahimo, M.

AU - Amaratunga, G.

AU - Udrea, F.

N1 - © 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

PY - 2015/8

Y1 - 2015/8

N2 - In this letter, a trench-insulated gate bipolar transistor (IGBT) design with local charge compensating layers featured at the cathode of the device is presented and analyzed. The superjunction or reduced surface effect proves to be very effective in overcoming the inherited ON-state versus breakdown tradeoff appearing in conventional devices, such as the soft punch through plus or field stop plus (FS+) IGBTs. This design enhances the ON-state performance of the FS+IGBT by increasing the plasma concentration at the cathode side without affecting either the switching performance or the breakdown rating.

AB - In this letter, a trench-insulated gate bipolar transistor (IGBT) design with local charge compensating layers featured at the cathode of the device is presented and analyzed. The superjunction or reduced surface effect proves to be very effective in overcoming the inherited ON-state versus breakdown tradeoff appearing in conventional devices, such as the soft punch through plus or field stop plus (FS+) IGBTs. This design enhances the ON-state performance of the FS+IGBT by increasing the plasma concentration at the cathode side without affecting either the switching performance or the breakdown rating.

KW - insulated gate bipolar transistors

KW - plasma applications

KW - power MOSFET

KW - power bipolar transistors

KW - semiconductor device breakdown

KW - breakdown rating

KW - cathode

KW - local charge compensating layers

KW - plasma enhancement

KW - superjunction power MOSFET

KW - trench-IGBT

KW - trench-insulated gate bipolar transistors

KW - Insulated Gate Bipolar Transistor (IGBT)

KW - Insulated gate bipolar transistor (IGBT)

KW - technology trade-off

KW - Cathodes

KW - Doping

KW - Electric breakdown

KW - Insulated gate bipolar transistors

KW - Logic gates

KW - Performance evaluation

KW - Switches

U2 - 10.1109/LED.2015.2433894

DO - 10.1109/LED.2015.2433894

M3 - Article

SN - 0741-3106

VL - 36

SP - 823

EP - 825

JO - Electron device letters

JF - Electron device letters

IS - 8

ER -

Novel Approach Toward Plasma Enhancement in Trench-Insulated Gate Bipolar Transistors

Abstract

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Keywords

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