Novel Approach Toward Plasma Enhancement in Trench-Insulated Gate Bipolar Transistors

M. Antoniou, Neophytis Lophitis, F. Bauer, I. Nistor, M. Bellini, M. Rahimo, G. Amaratunga, F. Udrea

    Research output: Contribution to journalArticlepeer-review

    23 Citations (Scopus)
    85 Downloads (Pure)

    Abstract

    In this letter, a trench-insulated gate bipolar transistor (IGBT) design with local charge compensating layers featured at the cathode of the device is presented and analyzed. The superjunction or reduced surface effect proves to be very effective in overcoming the inherited ON-state versus breakdown tradeoff appearing in conventional devices, such as the soft punch through plus or field stop plus (FS+) IGBTs. This design enhances the ON-state performance of the FS+IGBT by increasing the plasma concentration at the cathode side without affecting either the switching performance or the breakdown rating.
    Original languageEnglish
    Pages (from-to)823-825
    Number of pages3
    JournalElectron device letters
    Volume36
    Issue number8
    Early online date15 May 2015
    DOIs
    Publication statusPublished - Aug 2015

    Bibliographical note

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    Keywords

    • insulated gate bipolar transistors
    • plasma applications
    • power MOSFET
    • power bipolar transistors
    • semiconductor device breakdown
    • breakdown rating
    • cathode
    • local charge compensating layers
    • plasma enhancement
    • superjunction power MOSFET
    • trench-IGBT
    • trench-insulated gate bipolar transistors
    • Insulated Gate Bipolar Transistor (IGBT)
    • Insulated gate bipolar transistor (IGBT)
    • technology trade-off
    • Cathodes
    • Doping
    • Electric breakdown
    • Insulated gate bipolar transistors
    • Logic gates
    • Performance evaluation
    • Switches

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