Nondestructive Method for Mapping Metal Contact Diffusion in In2O3Thin-Film Transistors

Olga Kryvchenkova, Isam Abdullah, John Emyr Macdonals, Martin Elliott, Thomas Anthopoulos, Yen-Hung Lin, Petar Igic, Karol Kalna, Richard Cobley

Research output: Contribution to journalArticle

5 Citations (Scopus)
1 Downloads (Pure)

Abstract

The channel width-to-length ratio is an important transistor parameter for integrated circuit design. Contact diffusion into the channel during fabrication or operation alters the channel width and this important parameter. A novel methodology combining atomic force microscopy and scanning Kelvin probe microscopy (SKPM) with self-consistent modeling is developed for the nondestructive detection of contact diffusion on active devices. Scans of the surface potential are modeled using physically based Technology Computer Aided Design (TCAD) simulations when the transistor terminals are grounded and under biased conditions. The simulations also incorporate the tip geometry to investigate its effect on the measurements due to electrostatic tip–sample interactions. The method is particularly useful for semiconductor– and metal–semiconductor interfaces where the potential contrast resulting from dopant diffusion is below that usually detectable with scanning probe microscopy.
Original languageEnglish
Pages (from-to)25631-25636
Number of pages6
JournalACS Applied Materials and Interfaces
Volume8
Issue number38
DOIs
Publication statusPublished - 1 Sep 2016

Fingerprint

electric contacts
Transistors
transistors
Metals
metals
microscopy
Scanning probe microscopy
scanning
probes
Surface potential
computer aided design
Coulomb interactions
integrated circuits
Atomic force microscopy
Computer aided design
Microscopic examination
simulation
Doping (additives)
atomic force microscopy
methodology

Bibliographical note

This is an open access article published under a Creative Commons Attribution (CC-BY) License, which permits unrestricted use, distribution and reproduction in any medium, provided the author and source are cited.

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)
  • Materials Science(all)

Cite this

Kryvchenkova, O., Abdullah, I., Macdonals, J. E., Elliott, M., Anthopoulos, T., Lin, Y-H., ... Cobley, R. (2016). Nondestructive Method for Mapping Metal Contact Diffusion in In2O3Thin-Film Transistors. ACS Applied Materials and Interfaces, 8(38), 25631-25636. https://doi.org/10.1021/acsami.6b10332

Nondestructive Method for Mapping Metal Contact Diffusion in In2O3Thin-Film Transistors. / Kryvchenkova, Olga; Abdullah, Isam; Macdonals, John Emyr; Elliott, Martin; Anthopoulos, Thomas; Lin, Yen-Hung; Igic, Petar; Kalna, Karol; Cobley, Richard .

In: ACS Applied Materials and Interfaces, Vol. 8, No. 38, 01.09.2016, p. 25631-25636.

Research output: Contribution to journalArticle

Kryvchenkova, O, Abdullah, I, Macdonals, JE, Elliott, M, Anthopoulos, T, Lin, Y-H, Igic, P, Kalna, K & Cobley, R 2016, 'Nondestructive Method for Mapping Metal Contact Diffusion in In2O3Thin-Film Transistors' ACS Applied Materials and Interfaces, vol. 8, no. 38, pp. 25631-25636. https://doi.org/10.1021/acsami.6b10332
Kryvchenkova O, Abdullah I, Macdonals JE, Elliott M, Anthopoulos T, Lin Y-H et al. Nondestructive Method for Mapping Metal Contact Diffusion in In2O3Thin-Film Transistors. ACS Applied Materials and Interfaces. 2016 Sep 1;8(38):25631-25636. https://doi.org/10.1021/acsami.6b10332
Kryvchenkova, Olga ; Abdullah, Isam ; Macdonals, John Emyr ; Elliott, Martin ; Anthopoulos, Thomas ; Lin, Yen-Hung ; Igic, Petar ; Kalna, Karol ; Cobley, Richard . / Nondestructive Method for Mapping Metal Contact Diffusion in In2O3Thin-Film Transistors. In: ACS Applied Materials and Interfaces. 2016 ; Vol. 8, No. 38. pp. 25631-25636.
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