New physics-based compact electro-thermal model of power diode dedicated to circuit simulation

P. A. Mawby, P. M. Igic, M. S. Towers

Research output: Chapter in Book/Report/Conference proceedingConference proceedingpeer-review

13 Citations (Scopus)

Abstract

A physically based compact device model of the PIN diode is presented. A new 1D module for the drift zone (low doped n-base region) is presented which correctly describes static and dynamic behavior of the power diode. This incorporates conductivity modulation and non-quasistatic charge storage effect. Finally, this electric model is transformed into a electrothermal model by adding an extra node (thermal node) to the electrical compact model. This thermal node stores information about junction temperature of the active device and it represents a connection between the device and the rest of the circuit thermal network.

Original languageEnglish
Title of host publicationISCAS 2001 - 2001 IEEE International Symposium on Circuits and Systems, Conference Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages401-404
Number of pages4
ISBN (Print)0780366859, 9780780366855
DOIs
Publication statusPublished - 1 Dec 2001
Externally publishedYes
Event2001 IEEE International Symposium on Circuits and Systems, ISCAS 2001 - Sydney, NSW, Australia
Duration: 6 May 20019 May 2001

Publication series

NameISCAS 2001 - 2001 IEEE International Symposium on Circuits and Systems, Conference Proceedings
Volume3

Conference

Conference2001 IEEE International Symposium on Circuits and Systems, ISCAS 2001
CountryAustralia
CitySydney, NSW
Period6/05/019/05/01

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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