@inproceedings{5bbf90160f1146e7884073a75f8ff058,
title = "New physics-based compact electro-thermal model of power diode dedicated to circuit simulation",
abstract = "A physically based compact device model of the PIN diode is presented. A new 1D module for the drift zone (low doped n-base region) is presented which correctly describes static and dynamic behavior of the power diode. This incorporates conductivity modulation and non-quasistatic charge storage effect. Finally, this electric model is transformed into a electrothermal model by adding an extra node (thermal node) to the electrical compact model. This thermal node stores information about junction temperature of the active device and it represents a connection between the device and the rest of the circuit thermal network.",
author = "Mawby, {P. A.} and Igic, {P. M.} and Towers, {M. S.}",
year = "2001",
month = dec,
day = "1",
doi = "10.1109/ISCAS.2001.921332",
language = "English",
isbn = "0780366859",
series = "ISCAS 2001 - 2001 IEEE International Symposium on Circuits and Systems, Conference Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "401--404",
booktitle = "ISCAS 2001 - 2001 IEEE International Symposium on Circuits and Systems, Conference Proceedings",
address = "United States",
note = "2001 IEEE International Symposium on Circuits and Systems, ISCAS 2001 ; Conference date: 06-05-2001 Through 09-05-2001",
}