New physically-based PiN diode compact model for circuit modelling applications

P. M. Igic, P. A. Mawby, M. S. Towers, S. Batcup

Research output: Contribution to journalArticle

32 Citations (Scopus)

Abstract

A new physically-based compact device model of the PiN diode is presented. A one-dimensional model for the drift zone (low doped n-base region) is presented which accurately describes conductivity modulation and non-quasistatic charge storage effects within the structure. To validate the power diode compact model, simulation results are compared with those from a detailed drift-diffusion finite-element model, as well as with experimental results (for two different devices), showing an excellent agreement in all cases. The model is found to be efficient and robust in all cases examined.

Original languageEnglish
Pages (from-to)257-263
Number of pages7
JournalIEE Proceedings: Circuits, Devices and Systems
Volume149
Issue number4
DOIs
Publication statusPublished - 1 Aug 2002
Externally publishedYes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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