New physically-based PiN diode compact model for circuit modelling applications

P. M. Igic; P. A. Mawby; M. S. Towers; S. Batcup

doi:10.1049/ip-cds:20020365

New physically-based PiN diode compact model for circuit modelling applications

P. M. Igic, P. A. Mawby, M. S. Towers, S. Batcup

Swansea University

Research output: Contribution to journal › Article › peer-review

36 Citations (Scopus)

Abstract

A new physically-based compact device model of the PiN diode is presented. A one-dimensional model for the drift zone (low doped n-base region) is presented which accurately describes conductivity modulation and non-quasistatic charge storage effects within the structure. To validate the power diode compact model, simulation results are compared with those from a detailed drift-diffusion finite-element model, as well as with experimental results (for two different devices), showing an excellent agreement in all cases. The model is found to be efficient and robust in all cases examined.

Original language	English
Pages (from-to)	257-263
Number of pages	7
Journal	IEE Proceedings: Circuits, Devices and Systems
Volume	149
Issue number	4
DOIs	https://doi.org/10.1049/ip-cds:20020365
Publication status	Published - 1 Aug 2002
Externally published	Yes

ASJC Scopus subject areas

Electrical and Electronic Engineering

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AB - A new physically-based compact device model of the PiN diode is presented. A one-dimensional model for the drift zone (low doped n-base region) is presented which accurately describes conductivity modulation and non-quasistatic charge storage effects within the structure. To validate the power diode compact model, simulation results are compared with those from a detailed drift-diffusion finite-element model, as well as with experimental results (for two different devices), showing an excellent agreement in all cases. The model is found to be efficient and robust in all cases examined.

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New physically-based PiN diode compact model for circuit modelling applications

Abstract

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