@inproceedings{bd48665634474217b57f20ffe0c2b4d8,
title = "New LDMOS transistor based on 0.6u CMOS technology for power IC applications",
abstract = "New LDMOSFET device based on 0.6 microns CMOS technology (X-Fab Plymouth, UK) is presented in this paper. The process is based on p-(substrate)/p-(epi) layers, layer thicknesses and dopings being standard for this type of technology. The optimised device has a 75 V breakdown voltage.",
author = "S. Hussain and Holland, {P. M.} and T. Starke and Igic, {P. M.} and Mawby, {P. A.}",
year = "2002",
month = dec,
day = "1",
language = "English",
isbn = "0780375785",
series = "IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE",
pages = "169--171",
booktitle = "ICSE 2002 - 2002 IEEE International Conference on Semiconductor Electronics, Proceedings",
note = "2002 5th IEEE International Conference on Semiconductor Electronics, ICSE 2002 ; Conference date: 19-12-2002 Through 21-12-2002",
}