@inproceedings{977c228567174ab780f24f289d63cd85,
title = "New high voltage partial SOI technology for smart-power applications",
abstract = "New Partial Silicon-on-Insulator (PSOI) technology for power ICs is presented in this paper. It aims to overcome many of the common problems associated with the thin-epi SOI Power IC technology, such as heat dissipation and parasitic substrate-BOX-active region capacitance. This new PSOI technology is suitable for full bridge application, and allows integration of a photo-sensitive device (BJT) at no extra cost. All conclusions are supported with 2D numerical simulation results.",
keywords = "Full bridge applications, LDMOSFET, Power integrated circuits, SOI",
author = "P. Igic and N. Jankovic",
year = "2008",
month = dec,
day = "1",
doi = "10.1049/ic:20080202",
language = "English",
isbn = "9788001041390",
series = "IET Seminar Digest",
number = "2",
booktitle = "9th International Seminar on Power Semiconductors, ISPS 2008",
edition = "2",
note = "9th International Seminar on Power Semiconductors, ISPS 2008 ; Conference date: 27-08-2008 Through 29-08-2008",
}