New high voltage partial SOI technology for smart-power applications

P. Igic, N. Jankovic

    Research output: Chapter in Book/Report/Conference proceedingConference proceedingpeer-review

    Abstract

    New Partial Silicon-on-Insulator (PSOI) technology for power ICs is presented in this paper. It aims to overcome many of the common problems associated with the thin-epi SOI Power IC technology, such as heat dissipation and parasitic substrate-BOX-active region capacitance. This new PSOI technology is suitable for full bridge application, and allows integration of a photo-sensitive device (BJT) at no extra cost. All conclusions are supported with 2D numerical simulation results.

    Original languageEnglish
    Title of host publication9th International Seminar on Power Semiconductors, ISPS 2008
    Edition2
    DOIs
    Publication statusPublished - 1 Dec 2008
    Event9th International Seminar on Power Semiconductors, ISPS 2008 - Prague, Czech Republic
    Duration: 27 Aug 200829 Aug 2008

    Publication series

    NameIET Seminar Digest
    Number2
    Volume2008

    Conference

    Conference9th International Seminar on Power Semiconductors, ISPS 2008
    CountryCzech Republic
    CityPrague
    Period27/08/0829/08/08

    Keywords

    • Full bridge applications
    • LDMOSFET
    • Power integrated circuits
    • SOI

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering

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