New high voltage partial SOI technology for smart-power applications

P. Igic, N. Jankovic

Research output: Chapter in Book/Report/Conference proceedingConference proceeding

Abstract

New Partial Silicon-on-Insulator (PSOI) technology for power ICs is presented in this paper. It aims to overcome many of the common problems associated with the thin-epi SOI Power IC technology, such as heat dissipation and parasitic substrate-BOX-active region capacitance. This new PSOI technology is suitable for full bridge application, and allows integration of a photo-sensitive device (BJT) at no extra cost. All conclusions are supported with 2D numerical simulation results.

Original languageEnglish
Title of host publication9th International Seminar on Power Semiconductors, ISPS 2008
Edition2
DOIs
Publication statusPublished - 1 Dec 2008
Event9th International Seminar on Power Semiconductors, ISPS 2008 - Prague, Czech Republic
Duration: 27 Aug 200829 Aug 2008

Publication series

NameIET Seminar Digest
Number2
Volume2008

Conference

Conference9th International Seminar on Power Semiconductors, ISPS 2008
CountryCzech Republic
CityPrague
Period27/08/0829/08/08

Keywords

  • Full bridge applications
  • LDMOSFET
  • Power integrated circuits
  • SOI

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • Cite this

    Igic, P., & Jankovic, N. (2008). New high voltage partial SOI technology for smart-power applications. In 9th International Seminar on Power Semiconductors, ISPS 2008 (2 ed.). (IET Seminar Digest; Vol. 2008, No. 2). https://doi.org/10.1049/ic:20080202