New Bi-Mode Gate-Commutated Thyristor Design Concept for High-Current Controllability and Low ON-State Voltage Drop

Neophytos Lophitis, M. Antoniou, U. Vemulapati, M. Arnold, I. Nistor, J. Vobecky, M. Rahimo, F. Udrea

Research output: Contribution to journalArticle

2 Citations (Scopus)
30 Downloads (Pure)

Abstract

A new design approach for bi-mode gate-commutated thyristors (BGCTs) is proposed for high-current controllability and low ON-state voltage drop. Using a complex multi-cell mixed-mode simulation model which can capture the maximum controllable current (MCC) of large area devices, a failure analysis was performed to demonstrate that the new design concept can increase the MCC by about 27% at room temperature and by about 17% at 400 K while minimizing the ON-state voltage drop. The simulations depict that the improvement comes from the new approach to terminate the GCT part in the BGCT way of intertwining GCT and diode regions for reverse conducting operation.
Original languageEnglish
Pages (from-to)467 - 470
JournalIEEE Electron Device Letters
Volume37
Issue number4
DOIs
Publication statusPublished - 24 Feb 2016

Bibliographical note

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Keywords

  • electric current control
  • electric potential
  • failure analysis
  • mixed analogue-digital integrated circuits
  • semiconductor device models
  • thyristors
  • BGCT
  • Bi-mode gate-commutated thyristor design
  • MCC
  • high current controllability
  • low on state voltage drop
  • maximum controllable current
  • multicell mixed mode simulation model
  • temperature 400 K
  • Bi-mode
  • Full Wafer Modelling
  • Full wafer modelling
  • GCT
  • Gate Commutated Thyristor
  • Maximum Controllable Current
  • Reverse Conducting
  • SOA
  • Safe Operating Area
  • Thyristor
  • bi-mode
  • gate commutated thyristor
  • reverse conducting
  • safe operating area
  • thyristor
  • Cathodes
  • Controllability
  • Failure analysis
  • Logic gates
  • Semiconductor device modeling
  • Semiconductor diodes
  • Thyristors

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