New Bi-Mode Gate-Commutated Thyristor Design Concept for High-Current Controllability and Low ON-State Voltage Drop

Neophytos Lophitis; M. Antoniou; U. Vemulapati; M. Arnold; I. Nistor; J. Vobecky; M. Rahimo; F. Udrea

doi:10.1109/LED.2016.2533572

New Bi-Mode Gate-Commutated Thyristor Design Concept for High-Current Controllability and Low ON-State Voltage Drop

Neophytos Lophitis, M. Antoniou, U. Vemulapati, M. Arnold, I. Nistor, J. Vobecky, M. Rahimo, F. Udrea

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Abstract

A new design approach for bi-mode gate-commutated thyristors (BGCTs) is proposed for high-current controllability and low ON-state voltage drop. Using a complex multi-cell mixed-mode simulation model which can capture the maximum controllable current (MCC) of large area devices, a failure analysis was performed to demonstrate that the new design concept can increase the MCC by about 27% at room temperature and by about 17% at 400 K while minimizing the ON-state voltage drop. The simulations depict that the improvement comes from the new approach to terminate the GCT part in the BGCT way of intertwining GCT and diode regions for reverse conducting operation.

Original language	English
Pages (from-to)	467 - 470
Journal	IEEE Electron Device Letters
Volume	37
Issue number	4
DOIs	https://doi.org/10.1109/LED.2016.2533572
Publication status	Published - 24 Feb 2016

Bibliographical note

“© 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.”

Keywords

electric current control
electric potential
failure analysis
mixed analogue-digital integrated circuits
semiconductor device models
thyristors
BGCT
Bi-mode gate-commutated thyristor design
MCC
high current controllability
low on state voltage drop
maximum controllable current
multicell mixed mode simulation model
temperature 400 K
Bi-mode
Full Wafer Modelling
Full wafer modelling
GCT
Gate Commutated Thyristor
Maximum Controllable Current
Reverse Conducting
SOA
Safe Operating Area
Thyristor
bi-mode
gate commutated thyristor
reverse conducting
safe operating area
thyristor
Cathodes
Controllability
Failure analysis
Logic gates
Semiconductor device modeling
Semiconductor diodes
Thyristors

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10.1109/LED.2016.2533572

23 BGCT EDL finalAccepted author manuscript, 479 KB

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title = "New Bi-Mode Gate-Commutated Thyristor Design Concept for High-Current Controllability and Low ON-State Voltage Drop",

abstract = "A new design approach for bi-mode gate-commutated thyristors (BGCTs) is proposed for high-current controllability and low ON-state voltage drop. Using a complex multi-cell mixed-mode simulation model which can capture the maximum controllable current (MCC) of large area devices, a failure analysis was performed to demonstrate that the new design concept can increase the MCC by about 27% at room temperature and by about 17% at 400 K while minimizing the ON-state voltage drop. The simulations depict that the improvement comes from the new approach to terminate the GCT part in the BGCT way of intertwining GCT and diode regions for reverse conducting operation. ",

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AU - Arnold, M.

AU - Nistor, I.

AU - Vobecky, J.

AU - Rahimo, M.

AU - Udrea, F.

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AB - A new design approach for bi-mode gate-commutated thyristors (BGCTs) is proposed for high-current controllability and low ON-state voltage drop. Using a complex multi-cell mixed-mode simulation model which can capture the maximum controllable current (MCC) of large area devices, a failure analysis was performed to demonstrate that the new design concept can increase the MCC by about 27% at room temperature and by about 17% at 400 K while minimizing the ON-state voltage drop. The simulations depict that the improvement comes from the new approach to terminate the GCT part in the BGCT way of intertwining GCT and diode regions for reverse conducting operation.

KW - electric current control

KW - electric potential

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KW - low on state voltage drop

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KW - Logic gates

KW - Semiconductor device modeling

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ER -

New Bi-Mode Gate-Commutated Thyristor Design Concept for High-Current Controllability and Low ON-State Voltage Drop

Abstract

Bibliographical note

Keywords

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