Negative Quantum Capacitance Effects in Metal–Insulator–Semiconductor Devices with Composite Graphene-Encapsulated Gates

Polychronis Tsipas; Sigiava Aminalragia Giamini; Jose Marquez-Velasco; Nikolaos Kelaidis; Dimitra Tsoutsou; Kleopatra E. Aretouli; Evangelia Xenogiannopoulou; Evangelos K. Evangelou; Athanasios Dimoulas

doi:10.1002/aelm.201500297

Negative Quantum Capacitance Effects in Metal–Insulator–Semiconductor Devices with Composite Graphene-Encapsulated Gates

Polychronis Tsipas
, Sigiava Aminalragia Giamini
, Jose Marquez-Velasco
, Nikolaos Kelaidis
, Dimitra Tsoutsou
, Kleopatra E. Aretouli
, Evangelia Xenogiannopoulou
, Evangelos K. Evangelou
, Athanasios Dimoulas

National Centre of Scientific Research "Demokritos"
National and Kapodistrian University of Athens
University of Ioannina

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

Metal–insulator–semiconductor devices with composite graphene-encapsulated gates are grown on p- and n-Si substrates. Capacitance–voltage (C–V) measurements indicate a capacitance peak enhancement above the geometrical one in accumulation region. Such enhancement is attributed to negative capacitance contribution of graphene which is due to electron correlation effects. Experimental C–V data are in good agreement with theoretical results.

Original language	English
Article number	1500297
Journal	Advanced Electronic Materials
Volume	2
Issue number	4
Early online date	10 Feb 2016
DOIs	https://doi.org/10.1002/aelm.201500297
Publication status	Published - 14 Apr 2016

Keywords

electron correlation effects
quantum capacitance
negative capacitance field effect transistor
graphene
gate dielectrics

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Tsipas, P., Giamini, S. A., Marquez-Velasco, J., Kelaidis, N., Tsoutsou, D., Aretouli, K. E., Xenogiannopoulou, E., Evangelou, E. K., & Dimoulas, A. (2016). Negative Quantum Capacitance Effects in Metal–Insulator–Semiconductor Devices with Composite Graphene-Encapsulated Gates. Advanced Electronic Materials, 2(4), Article 1500297. https://doi.org/10.1002/aelm.201500297

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abstract = "Metal–insulator–semiconductor devices with composite graphene-encapsulated gates are grown on p- and n-Si substrates. Capacitance–voltage (C–V) measurements indicate a capacitance peak enhancement above the geometrical one in accumulation region. Such enhancement is attributed to negative capacitance contribution of graphene which is due to electron correlation effects. Experimental C–V data are in good agreement with theoretical results.",

keywords = "electron correlation effects, quantum capacitance, negative capacitance field effect transistor, graphene, gate dielectrics",

author = "Polychronis Tsipas and Giamini, \{Sigiava Aminalragia\} and Jose Marquez-Velasco and Nikolaos Kelaidis and Dimitra Tsoutsou and Aretouli, \{Kleopatra E.\} and Evangelia Xenogiannopoulou and Evangelou, \{Evangelos K.\} and Athanasios Dimoulas",

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AU - Tsipas, Polychronis

AU - Giamini, Sigiava Aminalragia

AU - Marquez-Velasco, Jose

AU - Kelaidis, Nikolaos

AU - Tsoutsou, Dimitra

AU - Aretouli, Kleopatra E.

AU - Xenogiannopoulou, Evangelia

AU - Evangelou, Evangelos K.

AU - Dimoulas, Athanasios

PY - 2016/4/14

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N2 - Metal–insulator–semiconductor devices with composite graphene-encapsulated gates are grown on p- and n-Si substrates. Capacitance–voltage (C–V) measurements indicate a capacitance peak enhancement above the geometrical one in accumulation region. Such enhancement is attributed to negative capacitance contribution of graphene which is due to electron correlation effects. Experimental C–V data are in good agreement with theoretical results.

AB - Metal–insulator–semiconductor devices with composite graphene-encapsulated gates are grown on p- and n-Si substrates. Capacitance–voltage (C–V) measurements indicate a capacitance peak enhancement above the geometrical one in accumulation region. Such enhancement is attributed to negative capacitance contribution of graphene which is due to electron correlation effects. Experimental C–V data are in good agreement with theoretical results.

KW - electron correlation effects

KW - quantum capacitance

KW - negative capacitance field effect transistor

KW - graphene

KW - gate dielectrics

U2 - 10.1002/aelm.201500297

DO - 10.1002/aelm.201500297

M3 - Article

SN - 2199-160X

VL - 2

JO - Advanced Electronic Materials

JF - Advanced Electronic Materials

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M1 - 1500297

ER -

Negative Quantum Capacitance Effects in Metal–Insulator–Semiconductor Devices with Composite Graphene-Encapsulated Gates

Abstract

Keywords

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