Negative Quantum Capacitance Effects in Metal–Insulator–Semiconductor Devices with Composite Graphene-Encapsulated Gates

Polychronis Tsipas, Sigiava Aminalragia Giamini, Jose Marquez-Velasco, Nikolaos Kelaidis, Dimitra Tsoutsou, Kleopatra E. Aretouli, Evangelia Xenogiannopoulou, Evangelos K. Evangelou, Athanasios Dimoulas

    Research output: Contribution to journalArticlepeer-review

    6 Citations (Scopus)

    Abstract

    Metal–insulator–semiconductor devices with composite graphene-encapsulated gates are grown on p- and n-Si substrates. Capacitance–voltage (C–V) measurements indicate a capacitance peak enhancement above the geometrical one in accumulation region. Such enhancement is attributed to negative capacitance contribution of graphene which is due to electron correlation effects. Experimental C–V data are in good agreement with theoretical results.
    Original languageEnglish
    Article number1500297
    JournalAdvanced Electronic Materials
    Volume2
    Issue number4
    Early online date10 Feb 2016
    DOIs
    Publication statusPublished - 14 Apr 2016

    Keywords

    • electron correlation effects
    • quantum capacitance
    • negative capacitance field effect transistor
    • graphene
    • gate dielectrics

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