Negative Quantum Capacitance Effects in Metal–Insulator–Semiconductor Devices with Composite Graphene-Encapsulated Gates

Polychronis Tsipas, Sigiava Aminalragia Giamini, Jose Marquez-Velasco, Nikolaos Kelaidis, Dimitra Tsoutsou, Kleopatra E. Aretouli, Evangelia Xenogiannopoulou, Evangelos K. Evangelou, Athanasios Dimoulas

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Metal–insulator–semiconductor devices with composite graphene-encapsulated gates are grown on p- and n-Si substrates. Capacitance–voltage (C–V) measurements indicate a capacitance peak enhancement above the geometrical one in accumulation region. Such enhancement is attributed to negative capacitance contribution of graphene which is due to electron correlation effects. Experimental C–V data are in good agreement with theoretical results.
Original languageEnglish
Article number1500297
JournalAdvanced Electronic Materials
Volume2
Issue number4
Early online date10 Feb 2016
DOIs
Publication statusPublished - 14 Apr 2016

Keywords

  • electron correlation effects
  • quantum capacitance
  • negative capacitance field effect transistor
  • graphene
  • gate dielectrics

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