TY - JOUR
T1 - Negative Quantum Capacitance Effects in Metal–Insulator–Semiconductor Devices with Composite Graphene-Encapsulated Gates
AU - Tsipas, Polychronis
AU - Giamini, Sigiava Aminalragia
AU - Marquez-Velasco, Jose
AU - Kelaidis, Nikolaos
AU - Tsoutsou, Dimitra
AU - Aretouli, Kleopatra E.
AU - Xenogiannopoulou, Evangelia
AU - Evangelou, Evangelos K.
AU - Dimoulas, Athanasios
PY - 2016/4/14
Y1 - 2016/4/14
N2 - Metal–insulator–semiconductor devices with composite graphene-encapsulated gates are grown on p- and n-Si substrates. Capacitance–voltage (C–V) measurements indicate a capacitance peak enhancement above the geometrical one in accumulation region. Such enhancement is attributed to negative capacitance contribution of graphene which is due to electron correlation effects. Experimental C–V data are in good agreement with theoretical results.
AB - Metal–insulator–semiconductor devices with composite graphene-encapsulated gates are grown on p- and n-Si substrates. Capacitance–voltage (C–V) measurements indicate a capacitance peak enhancement above the geometrical one in accumulation region. Such enhancement is attributed to negative capacitance contribution of graphene which is due to electron correlation effects. Experimental C–V data are in good agreement with theoretical results.
KW - electron correlation effects
KW - quantum capacitance
KW - negative capacitance field effect transistor
KW - graphene
KW - gate dielectrics
U2 - 10.1002/aelm.201500297
DO - 10.1002/aelm.201500297
M3 - Article
SN - 2199-160X
VL - 2
JO - Advanced Electronic Materials
JF - Advanced Electronic Materials
IS - 4
M1 - 1500297
ER -