Negative Quantum Capacitance Effects in Metal–Insulator–Semiconductor Devices with Composite Graphene-Encapsulated Gates

Polychronis Tsipas, Sigiava Aminalragia Giamini, Jose Marquez-Velasco, Nikolaos Kelaidis, Dimitra Tsoutsou, Kleopatra E. Aretouli, Evangelia Xenogiannopoulou, Evangelos K. Evangelou, Athanasios Dimoulas

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Metal–insulator–semiconductor devices with composite graphene-encapsulated gates are grown on p- and n-Si substrates. Capacitance–voltage (C–V) measurements indicate a capacitance peak enhancement above the geometrical one in accumulation region. Such enhancement is attributed to negative capacitance contribution of graphene which is due to electron correlation effects. Experimental C–V data are in good agreement with theoretical results.
Original languageEnglish
Article number1500297
JournalAdvanced Electronic Materials
Volume2
Issue number4
Early online date10 Feb 2016
DOIs
Publication statusPublished - 14 Apr 2016

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Graphene
Capacitance
Electron correlations
Composite materials
Substrates

Keywords

  • electron correlation effects
  • quantum capacitance
  • negative capacitance field effect transistor
  • graphene
  • gate dielectrics

Cite this

Negative Quantum Capacitance Effects in Metal–Insulator–Semiconductor Devices with Composite Graphene-Encapsulated Gates. / Tsipas, Polychronis; Giamini, Sigiava Aminalragia; Marquez-Velasco, Jose; Kelaidis, Nikolaos; Tsoutsou, Dimitra; Aretouli, Kleopatra E.; Xenogiannopoulou, Evangelia; Evangelou, Evangelos K.; Dimoulas, Athanasios.

In: Advanced Electronic Materials, Vol. 2, No. 4, 1500297, 14.04.2016.

Research output: Contribution to journalArticle

Tsipas, P, Giamini, SA, Marquez-Velasco, J, Kelaidis, N, Tsoutsou, D, Aretouli, KE, Xenogiannopoulou, E, Evangelou, EK & Dimoulas, A 2016, 'Negative Quantum Capacitance Effects in Metal–Insulator–Semiconductor Devices with Composite Graphene-Encapsulated Gates' Advanced Electronic Materials, vol. 2, no. 4, 1500297. https://doi.org/10.1002/aelm.201500297
Tsipas, Polychronis ; Giamini, Sigiava Aminalragia ; Marquez-Velasco, Jose ; Kelaidis, Nikolaos ; Tsoutsou, Dimitra ; Aretouli, Kleopatra E. ; Xenogiannopoulou, Evangelia ; Evangelou, Evangelos K. ; Dimoulas, Athanasios. / Negative Quantum Capacitance Effects in Metal–Insulator–Semiconductor Devices with Composite Graphene-Encapsulated Gates. In: Advanced Electronic Materials. 2016 ; Vol. 2, No. 4.
@article{7f6a83f5bad9439cad5b8b8f759403af,
title = "Negative Quantum Capacitance Effects in Metal–Insulator–Semiconductor Devices with Composite Graphene-Encapsulated Gates",
abstract = "Metal–insulator–semiconductor devices with composite graphene-encapsulated gates are grown on p- and n-Si substrates. Capacitance–voltage (C–V) measurements indicate a capacitance peak enhancement above the geometrical one in accumulation region. Such enhancement is attributed to negative capacitance contribution of graphene which is due to electron correlation effects. Experimental C–V data are in good agreement with theoretical results.",
keywords = "electron correlation effects, quantum capacitance, negative capacitance field effect transistor, graphene, gate dielectrics",
author = "Polychronis Tsipas and Giamini, {Sigiava Aminalragia} and Jose Marquez-Velasco and Nikolaos Kelaidis and Dimitra Tsoutsou and Aretouli, {Kleopatra E.} and Evangelia Xenogiannopoulou and Evangelou, {Evangelos K.} and Athanasios Dimoulas",
year = "2016",
month = "4",
day = "14",
doi = "10.1002/aelm.201500297",
language = "English",
volume = "2",
journal = "Advanced Electronic Materials",
issn = "2199-160X",
publisher = "Wiley",
number = "4",

}

TY - JOUR

T1 - Negative Quantum Capacitance Effects in Metal–Insulator–Semiconductor Devices with Composite Graphene-Encapsulated Gates

AU - Tsipas, Polychronis

AU - Giamini, Sigiava Aminalragia

AU - Marquez-Velasco, Jose

AU - Kelaidis, Nikolaos

AU - Tsoutsou, Dimitra

AU - Aretouli, Kleopatra E.

AU - Xenogiannopoulou, Evangelia

AU - Evangelou, Evangelos K.

AU - Dimoulas, Athanasios

PY - 2016/4/14

Y1 - 2016/4/14

N2 - Metal–insulator–semiconductor devices with composite graphene-encapsulated gates are grown on p- and n-Si substrates. Capacitance–voltage (C–V) measurements indicate a capacitance peak enhancement above the geometrical one in accumulation region. Such enhancement is attributed to negative capacitance contribution of graphene which is due to electron correlation effects. Experimental C–V data are in good agreement with theoretical results.

AB - Metal–insulator–semiconductor devices with composite graphene-encapsulated gates are grown on p- and n-Si substrates. Capacitance–voltage (C–V) measurements indicate a capacitance peak enhancement above the geometrical one in accumulation region. Such enhancement is attributed to negative capacitance contribution of graphene which is due to electron correlation effects. Experimental C–V data are in good agreement with theoretical results.

KW - electron correlation effects

KW - quantum capacitance

KW - negative capacitance field effect transistor

KW - graphene

KW - gate dielectrics

U2 - 10.1002/aelm.201500297

DO - 10.1002/aelm.201500297

M3 - Article

VL - 2

JO - Advanced Electronic Materials

JF - Advanced Electronic Materials

SN - 2199-160X

IS - 4

M1 - 1500297

ER -