Multiprobe measurement method for voltage-dependent capacitances of power semiconductor devices in high voltage

Ke Li, Arnaud Videt, Nadir Idir

Research output: Contribution to journalArticle

25 Citations (Scopus)


The characterization of voltage-dependent capacitances of power semiconductor devices [diode, MOSFET, insulated gate bipolar transistor (IGBT), etc.] is very important for modeling their dynamic performances. A measurement method using two current probes has been developed to characterize interelectrode capacitances of power devices while isolating the measurement devices from the high-voltage dc bias power source. Ciss and C oss are shown to be accurately measured while Crss is not convincing enough. Then an additional current probe is added to improve the method. Crss is shown to be well characterized by this three-current-probe method. This method has been validated using various technologies of semiconductor devices including silicon MOSFET and silicon carbide JFET. The interelectrode capacitances of power devices can be safely and accurately measured with this multiprobe method even in high voltage.

Original languageEnglish
Article number6410437
Pages (from-to)5414-5422
Number of pages9
JournalIEEE Transactions on Power Electronics
Issue number11
Publication statusE-pub ahead of print - 14 Jan 2013
Externally publishedYes



  • Current probes
  • high voltage
  • power semiconductor devices
  • silicon
  • silicon carbide (SiC)
  • voltage-dependent capacitances

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this