Modification by high pressure of fluctuation paraconductivity of underdoped HoBa2Cu3O7-δ single crystals

S. N. Kamchatnaya, I. L. Goulatis, R. V. Vovk, Alexander Chroneos

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Abstract

In this work, we investigate the effect of high pressure on the conductivity in the basal plane of the high temperature super conducting (HTSC) single crystals HoBa2Cu3O7-δ. It is determined that the excess conductivity Δσ(T) of the HoBa2Cu3O7- δ single crystals in the temperature interval near the critical temperature (Tc) is described within the framework of the Aslamazov-Larkin theoretical model. It is shown that the evolution of the transverse coherence length ξc(0) in the case of application/removal of high pressure is largely determined by the “relaxation” pressure effect during prolonged exposure of the sample under load at room temperature.

The final publication is available at Springer via 10.1007/s10854-016-4797-6
Copyright © and Moral Rights are retained by the author(s) and/ or other copyright owners. A copy can be downloaded for personal non-commercial research or study, without prior permission or charge. This item cannot be reproduced or quoted extensively from without first obtaining permission in writing from the copyright holder(s). The content must not be changed in any way or sold commercially in any format or medium without the formal permission of the copyright holders

Original languageEnglish
Pages (from-to)8013-8019
JournalJournal of Materials Science: Materials in Electronics
Volume27
Issue number8
Early online date16 Apr 2016
DOIs
Publication statusPublished - Aug 2016

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critical temperature
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Modification by high pressure of fluctuation paraconductivity of underdoped HoBa2Cu3O7-δ single crystals. / Kamchatnaya, S. N.; Goulatis, I. L.; Vovk, R. V.; Chroneos, Alexander.

In: Journal of Materials Science: Materials in Electronics, Vol. 27, No. 8, 08.2016, p. 8013-8019.

Research output: Contribution to journalArticle

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