Modelling and optimization of GaN capped HEMTs

Soroush Faramehr; Petar Igic; Karol Kalna

doi:10.1109/ASDAM.2014.6998668

Modelling and optimization of GaN capped HEMTs

Soroush Faramehr, Petar Igic, Karol Kalna

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding › peer-review

5 Citations (Scopus)

Abstract

The effect of GaN cap and its thickness on device performance is investigated using simulations by Silvaco Atlas toolbox. The simulations are based on meticulous calibration of a conventional, lateral, GaN capped, 1μm gate-length HEMT with a source-to-gate and gate-to-drain spacings of 2μm, and 3μm, respectively. The breakdown voltage of the GaN HEMT is improved by the aid of p-doped GaN cap and field plates to BV=630V showing an improvement of 540V in comparison to an unoptimized device. Furthermore, the possible creation of two dimensional hole gas (2DHG) at the interface of GaN cap and AlGaN barrier and its effect on the device behaviour is studied.

Original language	English
Title of host publication	The Tenth International Conference on Advanced Semiconductor Devices and Microsystems
Editors	Juraj Breza, Daniel Donoval, Erik Vavrinský
Publisher	IEEE
Pages	1-4
Number of pages	4
ISBN (Electronic)	978-1-4799-5475-9
ISBN (Print)	978-1-4799-5474-2
DOIs	https://doi.org/10.1109/ASDAM.2014.6998668
Publication status	Published - 29 Dec 2014
Externally published	Yes
Event	10th International Conference on Advanced Semiconductor Devices and Microsystems - Smolenice, Slovakia Duration: 20 Oct 2014 → 22 Oct 2014 Conference number: 10th

Conference

Conference	10th International Conference on Advanced Semiconductor Devices and Microsystems
Abbreviated title	ASDAM 2014
Country/Territory	Slovakia
City	Smolenice
Period	20/10/14 → 22/10/14

Keywords

Gallium nitride
HEMTs
MODFETs
Logic gates
Aluminum gallium nitride
Two dimensional hole gas ,
Electric breakdown

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10.1109/ASDAM.2014.6998668

Cite this

Faramehr, S , Igic, P & Kalna, K 2014, Modelling and optimization of GaN capped HEMTs. in J Breza, D Donoval & E Vavrinský (eds), The Tenth International Conference on Advanced Semiconductor Devices and Microsystems . IEEE, pp. 1-4, 10th International Conference on Advanced Semiconductor Devices and Microsystems, Smolenice, Slovakia, 20/10/14. https://doi.org/10.1109/ASDAM.2014.6998668

@inproceedings{4a7f72b75e934fe99d6f16f309e4f993,

title = "Modelling and optimization of GaN capped HEMTs",

abstract = "The effect of GaN cap and its thickness on device performance is investigated using simulations by Silvaco Atlas toolbox. The simulations are based on meticulous calibration of a conventional, lateral, GaN capped, 1μm gate-length HEMT with a source-to-gate and gate-to-drain spacings of 2μm, and 3μm, respectively. The breakdown voltage of the GaN HEMT is improved by the aid of p-doped GaN cap and field plates to BV=630V showing an improvement of 540V in comparison to an unoptimized device. Furthermore, the possible creation of two dimensional hole gas (2DHG) at the interface of GaN cap and AlGaN barrier and its effect on the device behaviour is studied.",

keywords = "Gallium nitride, HEMTs, MODFETs, Logic gates, Aluminum gallium nitride, Two dimensional hole gas ,, Electric breakdown",

author = "Soroush Faramehr and Petar Igic and Karol Kalna",

year = "2014",

month = dec,

day = "29",

doi = "10.1109/ASDAM.2014.6998668",

language = "English",

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booktitle = "The Tenth International Conference on Advanced Semiconductor Devices and Microsystems",

publisher = "IEEE",

address = "United States",

note = "10th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2014 ; Conference date: 20-10-2014 Through 22-10-2014",

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TY - GEN

T1 - Modelling and optimization of GaN capped HEMTs

AU - Faramehr, Soroush

AU - Igic, Petar

AU - Kalna, Karol

N1 - Conference code: 10th

PY - 2014/12/29

Y1 - 2014/12/29

N2 - The effect of GaN cap and its thickness on device performance is investigated using simulations by Silvaco Atlas toolbox. The simulations are based on meticulous calibration of a conventional, lateral, GaN capped, 1μm gate-length HEMT with a source-to-gate and gate-to-drain spacings of 2μm, and 3μm, respectively. The breakdown voltage of the GaN HEMT is improved by the aid of p-doped GaN cap and field plates to BV=630V showing an improvement of 540V in comparison to an unoptimized device. Furthermore, the possible creation of two dimensional hole gas (2DHG) at the interface of GaN cap and AlGaN barrier and its effect on the device behaviour is studied.

AB - The effect of GaN cap and its thickness on device performance is investigated using simulations by Silvaco Atlas toolbox. The simulations are based on meticulous calibration of a conventional, lateral, GaN capped, 1μm gate-length HEMT with a source-to-gate and gate-to-drain spacings of 2μm, and 3μm, respectively. The breakdown voltage of the GaN HEMT is improved by the aid of p-doped GaN cap and field plates to BV=630V showing an improvement of 540V in comparison to an unoptimized device. Furthermore, the possible creation of two dimensional hole gas (2DHG) at the interface of GaN cap and AlGaN barrier and its effect on the device behaviour is studied.

KW - Gallium nitride

KW - HEMTs

KW - MODFETs

KW - Logic gates

KW - Aluminum gallium nitride

KW - Two dimensional hole gas ,

KW - Electric breakdown

U2 - 10.1109/ASDAM.2014.6998668

DO - 10.1109/ASDAM.2014.6998668

M3 - Conference proceeding

SN - 978-1-4799-5474-2

SP - 1

EP - 4

BT - The Tenth International Conference on Advanced Semiconductor Devices and Microsystems

A2 - Breza, Juraj

A2 - Donoval, Daniel

A2 - Vavrinský, Erik

PB - IEEE

T2 - 10th International Conference on Advanced Semiconductor Devices and Microsystems

Y2 - 20 October 2014 through 22 October 2014

ER -

Modelling and optimization of GaN capped HEMTs

Abstract

Conference

Keywords

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