Modelling and optimization of GaN capped HEMTs

Research output: Chapter in Book/Report/Conference proceedingConference proceeding

2 Citations (Scopus)

Abstract

The effect of GaN cap and its thickness on device performance is investigated using simulations by Silvaco Atlas toolbox. The simulations are based on meticulous calibration of a conventional, lateral, GaN capped, 1μm gate-length HEMT with a source-to-gate and gate-to-drain spacings of 2μm, and 3μm, respectively. The breakdown voltage of the GaN HEMT is improved by the aid of p-doped GaN cap and field plates to BV=630V showing an improvement of 540V in comparison to an unoptimized device. Furthermore, the possible creation of two dimensional hole gas (2DHG) at the interface of GaN cap and AlGaN barrier and its effect on the device behaviour is studied.
Original languageEnglish
Title of host publicationThe Tenth International Conference on Advanced Semiconductor Devices and Microsystems
EditorsJuraj Breza, Daniel Donoval, Erik Vavrinský
PublisherIEEE
Pages1-4
Number of pages4
ISBN (Electronic)978-1-4799-5475-9
ISBN (Print)978-1-4799-5474-2
DOIs
Publication statusPublished - 29 Dec 2014
Externally publishedYes
Event10th International Conference on Advanced Semiconductor Devices and Microsystems - Smolenice, Slovakia
Duration: 20 Oct 201422 Oct 2014
Conference number: 10th

Conference

Conference10th International Conference on Advanced Semiconductor Devices and Microsystems
Abbreviated titleASDAM 2014
CountrySlovakia
CitySmolenice
Period20/10/1422/10/14

Keywords

  • Gallium nitride
  • HEMTs
  • MODFETs
  • Logic gates
  • Aluminum gallium nitride
  • Two dimensional hole gas ,
  • Electric breakdown

Fingerprint Dive into the research topics of 'Modelling and optimization of GaN capped HEMTs'. Together they form a unique fingerprint.

  • Cite this

    Faramehr, S., Igic, P., & Kalna, K. (2014). Modelling and optimization of GaN capped HEMTs. In J. Breza, D. Donoval, & E. Vavrinský (Eds.), The Tenth International Conference on Advanced Semiconductor Devices and Microsystems (pp. 1-4). IEEE. https://doi.org/10.1109/ASDAM.2014.6998668