Modeling self-diffusion in UO2 and ThO2 by connecting point defect parameters with bulk properties

A. Chroneos, R.V. Vovk

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    Abstract

    The understanding of oxygen self-diffusion over a range of temperatures is important in UO2 and ThO2 particularly for nuclear fuel applications. A way to realize this is by the cBΩ model in which the defect Gibbs energy is proportional to the isothermal bulk modulus (B) and the mean volume per atom (Ω). In the present study elastic and expansivity data is used in the framework of the cBΩ model to derive the oxygen self-diffusion coefficient in UO2 and ThO2 in the temperature range of 2000 K to 3000 K. The derived results are in excellent agreement with the most recent experimental and theoretical data.
    Original languageEnglish
    Pages (from-to)1-3
    JournalSolid State Ionics
    Volume274
    Issue numberJune 2015
    Early online date3 Mar 2015
    DOIs
    Publication statusPublished - Jun 2015

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    Keywords

    • ThO2
    • UO2
    • Self-diffusion

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