Modeling of 2DEG and 2DHG in i-GaN capped AlGaN/AlN/GaN HEMTs

Soroush Faramehr; Karol Kalna; Petar Igic

doi:10.1109/MIEL.2014.6842090

Modeling of 2DEG and 2DHG in i-GaN capped AlGaN/AlN/GaN HEMTs

Soroush Faramehr, Karol Kalna, Petar Igic

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding › peer-review

6 Citations (Scopus)

Abstract

A 2D drift-diffusion model with Schrodinger-Poisson quantum corrections using ATLAS toolbox by Silvaco is calibrated against experimental I D -V GS characteristics of the 1 μm gate length GaN-based high electron mobility transistor (HEMT). The model takes into account both piezoelectric and spontaneous polarization effects at the all interfaces of GaN/Al 0.25 Ga 0.75 N/AlN/GaN structure. This unintentionally doped hetero-structure transistor has i) an enhanced carrier mobility due to the decrease in alloy-disorder and impurity scatterings; ii) an increased carrier sheet density in 2DEG due to a better confinement in the channel thanks to AlN spacer. These improvements considerably enhance the output power and performance of the GaN HEMTs. We found that surface traps play an essential role in the creation of 2DHG which can affect a carrier density in 2DEG.

Original language	English
Title of host publication	29th International Conference on Microelectronics Proceedings - MIEL 2014
Publisher	IEEE
Pages	81-84
Number of pages	4
ISBN (Electronic)	978-1-4799-5296-0
ISBN (Print)	978-1-4799-5295-3
DOIs	https://doi.org/10.1109/MIEL.2014.6842090
Publication status	Published - 26 Jun 2014
Externally published	Yes
Event	2014 29th International Conference on Microelectronics Proceedings - Belgrade, Serbia Duration: 12 May 2014 → 14 May 2014 Conference number: 29th

Conference

Conference	2014 29th International Conference on Microelectronics Proceedings
Abbreviated title	MIEL 2014
Country/Territory	Serbia
City	Belgrade
Period	12/05/14 → 14/05/14

Keywords

Gallium nitride
HEMTs
MODFETs
Aluminum gallium nitride
III-V semiconductor materials
Two dimensional hole gas
Logic gates

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10.1109/MIEL.2014.6842090

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title = "Modeling of 2DEG and 2DHG in i-GaN capped AlGaN/AlN/GaN HEMTs",

abstract = "A 2D drift-diffusion model with Schrodinger-Poisson quantum corrections using ATLAS toolbox by Silvaco is calibrated against experimental I D -V GS characteristics of the 1 μm gate length GaN-based high electron mobility transistor (HEMT). The model takes into account both piezoelectric and spontaneous polarization effects at the all interfaces of GaN/Al 0.25 Ga 0.75 N/AlN/GaN structure. This unintentionally doped hetero-structure transistor has i) an enhanced carrier mobility due to the decrease in alloy-disorder and impurity scatterings; ii) an increased carrier sheet density in 2DEG due to a better confinement in the channel thanks to AlN spacer. These improvements considerably enhance the output power and performance of the GaN HEMTs. We found that surface traps play an essential role in the creation of 2DHG which can affect a carrier density in 2DEG.",

keywords = "Gallium nitride, HEMTs, MODFETs, Aluminum gallium nitride, III-V semiconductor materials, Two dimensional hole gas, Logic gates",

author = "Soroush Faramehr and Karol Kalna and Petar Igic",

year = "2014",

month = jun,

day = "26",

doi = "10.1109/MIEL.2014.6842090",

language = "English",

isbn = "978-1-4799-5295-3",

pages = "81--84",

booktitle = "29th International Conference on Microelectronics Proceedings - MIEL 2014",

publisher = "IEEE",

address = "United States",

note = "2014 29th International Conference on Microelectronics Proceedings , MIEL 2014 ; Conference date: 12-05-2014 Through 14-05-2014",

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T1 - Modeling of 2DEG and 2DHG in i-GaN capped AlGaN/AlN/GaN HEMTs

AU - Faramehr, Soroush

AU - Kalna, Karol

AU - Igic, Petar

N1 - Conference code: 29th

PY - 2014/6/26

Y1 - 2014/6/26

N2 - A 2D drift-diffusion model with Schrodinger-Poisson quantum corrections using ATLAS toolbox by Silvaco is calibrated against experimental I D -V GS characteristics of the 1 μm gate length GaN-based high electron mobility transistor (HEMT). The model takes into account both piezoelectric and spontaneous polarization effects at the all interfaces of GaN/Al 0.25 Ga 0.75 N/AlN/GaN structure. This unintentionally doped hetero-structure transistor has i) an enhanced carrier mobility due to the decrease in alloy-disorder and impurity scatterings; ii) an increased carrier sheet density in 2DEG due to a better confinement in the channel thanks to AlN spacer. These improvements considerably enhance the output power and performance of the GaN HEMTs. We found that surface traps play an essential role in the creation of 2DHG which can affect a carrier density in 2DEG.

AB - A 2D drift-diffusion model with Schrodinger-Poisson quantum corrections using ATLAS toolbox by Silvaco is calibrated against experimental I D -V GS characteristics of the 1 μm gate length GaN-based high electron mobility transistor (HEMT). The model takes into account both piezoelectric and spontaneous polarization effects at the all interfaces of GaN/Al 0.25 Ga 0.75 N/AlN/GaN structure. This unintentionally doped hetero-structure transistor has i) an enhanced carrier mobility due to the decrease in alloy-disorder and impurity scatterings; ii) an increased carrier sheet density in 2DEG due to a better confinement in the channel thanks to AlN spacer. These improvements considerably enhance the output power and performance of the GaN HEMTs. We found that surface traps play an essential role in the creation of 2DHG which can affect a carrier density in 2DEG.

KW - Gallium nitride

KW - HEMTs

KW - MODFETs

KW - Aluminum gallium nitride

KW - III-V semiconductor materials

KW - Two dimensional hole gas

KW - Logic gates

U2 - 10.1109/MIEL.2014.6842090

DO - 10.1109/MIEL.2014.6842090

M3 - Conference proceeding

SN - 978-1-4799-5295-3

SP - 81

EP - 84

BT - 29th International Conference on Microelectronics Proceedings - MIEL 2014

PB - IEEE

T2 - 2014 29th International Conference on Microelectronics Proceedings

Y2 - 12 May 2014 through 14 May 2014

ER -

Modeling of 2DEG and 2DHG in i-GaN capped AlGaN/AlN/GaN HEMTs

Abstract

Conference

Keywords

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