Modeling indium diffusion in germanium by connecting point defect parameters with bulk properties

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Abstract

Indium is a p-type dopant that can be considered for p-channel germanium metal oxide semiconductor field effect transistors. As such understanding its diffusion properties over a range of temperatures and pressures is technologically important. This can be realized in the cBΩ model in which the defect Gibbs energy is proportional to the isothermal bulk modulus (B) and the mean volume per atom (Ω). In the present study elastic and expansivity data is used in the framework of the cBΩ model to derive the indium diffusion coefficient in germanium in the temperature range 827–1,176 K. The calculated results are in excellent agreement with the available experimental data.
Original languageEnglish
JournalJournal of Materials Science: Materials in Electronics
VolumeIn press
DOIs
Publication statusPublished - 2015

Bibliographical note

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Keywords

  • Defects
  • Diffusion
  • Germanium
  • Indium
  • MOS devices
  • MOSFET devices
  • Point defects
  • Semiconducting indium
  • Bulk properties
  • Connecting points
  • Diffusion properties
  • Isothermal bulk modulus
  • P channels
  • P-type dopant
  • Temperature range

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