Modeling defect reactions processes to study the impact of carbon on the production and conversion of A-centers in silicon

C.A. Londos; E.N. Sgourou; Alexander Chroneos

doi:10.1007/s10854-014-2246-y

Modeling defect reactions processes to study the impact of carbon on the production and conversion of A-centers in silicon

C.A. Londos, E.N. Sgourou, Alexander Chroneos

Research output: Contribution to journal › Article

2 Citations (Scopus)

Abstract

The vacancy-oxygen (VO or A-center) defect is one of the most significant defects in Czochralski-grown silicon (Cz-Si). Here we investigate the effect of carbon on the formation of VO defect and its conversion upon annealing to the VO2 defect. Cz-Si samples with various carbon concentrations were irradiated by 2 MeV electrons. The formation of VO pair, its thermal stability and evolution and its conversion to the VO2 defect were previously monitored and studied by means of infrared (IR) spectroscopy. Modeling of the formation process showed that the VO concentration has a square root dependency on the carbon substitutional (Cs) concentration. The conversion of the VO to the VO2 defect decreases with the increase of the Cs concentration. The results are in agreement with the experimental observed dependency of the conversion ratio on the Cs concentration, since [VO] increases when [Cs] increases

Original language	English
Pages (from-to)	4872-4876
Journal	Journal of Materials Science: Materials in Electronics
Volume	25
Issue number	11
DOIs	https://doi.org/10.1007/s10854-014-2246-y
Publication status	Published - 2014

Bibliographical note

This paper is not yet on the repository.

Keywords

chemical manufacturing
silicon

Access to Document

10.1007/s10854-014-2246-y

Cite this

@article{f9360df436f54854b02adf390ea77017,

title = "Modeling defect reactions processes to study the impact of carbon on the production and conversion of A-centers in silicon",

abstract = "The vacancy-oxygen (VO or A-center) defect is one of the most significant defects in Czochralski-grown silicon (Cz-Si). Here we investigate the effect of carbon on the formation of VO defect and its conversion upon annealing to the VO2 defect. Cz-Si samples with various carbon concentrations were irradiated by 2 MeV electrons. The formation of VO pair, its thermal stability and evolution and its conversion to the VO2 defect were previously monitored and studied by means of infrared (IR) spectroscopy. Modeling of the formation process showed that the VO concentration has a square root dependency on the carbon substitutional (Cs) concentration. The conversion of the VO to the VO2 defect decreases with the increase of the Cs concentration. The results are in agreement with the experimental observed dependency of the conversion ratio on the Cs concentration, since [VO] increases when [Cs] increases",

keywords = "chemical manufacturing, silicon",

author = "C.A. Londos and E.N. Sgourou and Alexander Chroneos",

note = "This paper is not yet on the repository.",

year = "2014",

doi = "10.1007/s10854-014-2246-y",

language = "English",

volume = "25",

pages = "4872--4876",

journal = "Journal of Materials Science: Materials in Electronics",

issn = "0957-4522",

publisher = "Springer Verlag",

number = "11",

}

TY - JOUR

T1 - Modeling defect reactions processes to study the impact of carbon on the production and conversion of A-centers in silicon

AU - Londos, C.A.

AU - Sgourou, E.N.

AU - Chroneos, Alexander

N1 - This paper is not yet on the repository.

PY - 2014

Y1 - 2014

N2 - The vacancy-oxygen (VO or A-center) defect is one of the most significant defects in Czochralski-grown silicon (Cz-Si). Here we investigate the effect of carbon on the formation of VO defect and its conversion upon annealing to the VO2 defect. Cz-Si samples with various carbon concentrations were irradiated by 2 MeV electrons. The formation of VO pair, its thermal stability and evolution and its conversion to the VO2 defect were previously monitored and studied by means of infrared (IR) spectroscopy. Modeling of the formation process showed that the VO concentration has a square root dependency on the carbon substitutional (Cs) concentration. The conversion of the VO to the VO2 defect decreases with the increase of the Cs concentration. The results are in agreement with the experimental observed dependency of the conversion ratio on the Cs concentration, since [VO] increases when [Cs] increases

AB - The vacancy-oxygen (VO or A-center) defect is one of the most significant defects in Czochralski-grown silicon (Cz-Si). Here we investigate the effect of carbon on the formation of VO defect and its conversion upon annealing to the VO2 defect. Cz-Si samples with various carbon concentrations were irradiated by 2 MeV electrons. The formation of VO pair, its thermal stability and evolution and its conversion to the VO2 defect were previously monitored and studied by means of infrared (IR) spectroscopy. Modeling of the formation process showed that the VO concentration has a square root dependency on the carbon substitutional (Cs) concentration. The conversion of the VO to the VO2 defect decreases with the increase of the Cs concentration. The results are in agreement with the experimental observed dependency of the conversion ratio on the Cs concentration, since [VO] increases when [Cs] increases

KW - chemical manufacturing

KW - silicon

U2 - 10.1007/s10854-014-2246-y

DO - 10.1007/s10854-014-2246-y

M3 - Article

SN - 0957-4522

SN - 1573-482X

VL - 25

SP - 4872

EP - 4876

JO - Journal of Materials Science: Materials in Electronics

JF - Journal of Materials Science: Materials in Electronics

IS - 11

ER -

Modeling defect reactions processes to study the impact of carbon on the production and conversion of A-centers in silicon

Abstract

Bibliographical note

Keywords

Access to Document

Fingerprint

Cite this