Modeling defect reactions processes to study the impact of carbon on the production and conversion of A-centers in silicon

C.A. Londos, E.N. Sgourou, Alexander Chroneos

    Research output: Contribution to journalArticle

    2 Citations (Scopus)

    Abstract

    The vacancy-oxygen (VO or A-center) defect is one of the most significant defects in Czochralski-grown silicon (Cz-Si). Here we investigate the effect of carbon on the formation of VO defect and its conversion upon annealing to the VO2 defect. Cz-Si samples with various carbon concentrations were irradiated by 2 MeV electrons. The formation of VO pair, its thermal stability and evolution and its conversion to the VO2 defect were previously monitored and studied by means of infrared (IR) spectroscopy. Modeling of the formation process showed that the VO concentration has a square root dependency on the carbon substitutional (Cs) concentration. The conversion of the VO to the VO2 defect decreases with the increase of the Cs concentration. The results are in agreement with the experimental observed dependency of the conversion ratio on the Cs concentration, since [VO] increases when [Cs] increases
    Original languageEnglish
    Pages (from-to)4872-4876
    JournalJournal of Materials Science: Materials in Electronics
    Volume25
    Issue number11
    DOIs
    Publication statusPublished - 2014

    Bibliographical note

    This paper is not yet on the repository.

    Keywords

    • chemical manufacturing
    • silicon

    Fingerprint Dive into the research topics of 'Modeling defect reactions processes to study the impact of carbon on the production and conversion of A-centers in silicon'. Together they form a unique fingerprint.

    Cite this