Measurement and modelling of power electronic devices at cryogenic temperatures

A. J. Forsyth, S. Y. Yang, P. A. Mawby, P. Igic

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17 Citations (Scopus)

Abstract

Practical results are used to parameterise a physically based, compact IGBT model for three generations of IGBT (PT, NPT and IGBT3), at temperatures extending down to 50K. Full details are presented of the model parameter variations with temperature over the range 50-300K. The models are then used to examine the performance of a sinusoidal pulse-width-modulated inverter leg at cryogenic temperatures.

Original languageEnglish
Pages (from-to)407-415
Number of pages9
JournalIEE Proceedings: Circuits, Devices and Systems
Volume153
Issue number5
DOIs
Publication statusPublished - 6 Nov 2006
Externally publishedYes

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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