Measurement and modelling of power electronic devices at cryogenic temperatures

A. J. Forsyth; S. Y. Yang; P. A. Mawby; P. Igic

doi:10.1049/ip-cds:20050359

Measurement and modelling of power electronic devices at cryogenic temperatures

A. J. Forsyth, S. Y. Yang, P. A. Mawby, P. Igic

Research output: Contribution to journal › Article › peer-review

25 Citations (Scopus)

Abstract

Practical results are used to parameterise a physically based, compact IGBT model for three generations of IGBT (PT, NPT and IGBT3), at temperatures extending down to 50K. Full details are presented of the model parameter variations with temperature over the range 50-300K. The models are then used to examine the performance of a sinusoidal pulse-width-modulated inverter leg at cryogenic temperatures.

Original language	English
Pages (from-to)	407-415
Number of pages	9
Journal	IEE Proceedings: Circuits, Devices and Systems
Volume	153
Issue number	5
DOIs	https://doi.org/10.1049/ip-cds:20050359
Publication status	Published - 6 Nov 2006
Externally published	Yes

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/ip-cds:20050359

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abstract = "Practical results are used to parameterise a physically based, compact IGBT model for three generations of IGBT (PT, NPT and IGBT3), at temperatures extending down to 50K. Full details are presented of the model parameter variations with temperature over the range 50-300K. The models are then used to examine the performance of a sinusoidal pulse-width-modulated inverter leg at cryogenic temperatures.",

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AU - Mawby, P. A.

AU - Igic, P.

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Y1 - 2006/11/6

N2 - Practical results are used to parameterise a physically based, compact IGBT model for three generations of IGBT (PT, NPT and IGBT3), at temperatures extending down to 50K. Full details are presented of the model parameter variations with temperature over the range 50-300K. The models are then used to examine the performance of a sinusoidal pulse-width-modulated inverter leg at cryogenic temperatures.

AB - Practical results are used to parameterise a physically based, compact IGBT model for three generations of IGBT (PT, NPT and IGBT3), at temperatures extending down to 50K. Full details are presented of the model parameter variations with temperature over the range 50-300K. The models are then used to examine the performance of a sinusoidal pulse-width-modulated inverter leg at cryogenic temperatures.

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Measurement and modelling of power electronic devices at cryogenic temperatures

Abstract

ASJC Scopus subject areas

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