TY - JOUR
T1 - Isovalent doping and the CiOi defect in germanium
AU - Christopoulos, Stavros
AU - Sgourou, E.N.
AU - Vovk, R.V.
AU - Chroneos, Alexander
AU - Londos, C.A.
PY - 2018/3
Y1 - 2018/3
N2 - Oxygen–carbon defects have been studied for decades in silicon but are less well established in germanium. In the present study we employ density functional theory calculations to study the structure of the CiOi defect in germanium. Additionally, we investigate the interaction the CiOi defect with isovalent dopants such as silicon and tin. It is calculated that the CiOi defects will preferentially form near isovalent dopants in germanium. Interestingly the structure of the dopant-CiOi defects is different with the Sn residing next to the Oi whereas the Si atom bonds with the Ci. The differences in the structure of CiOi defects in the vicinity of isovalent dopants are discussed.
AB - Oxygen–carbon defects have been studied for decades in silicon but are less well established in germanium. In the present study we employ density functional theory calculations to study the structure of the CiOi defect in germanium. Additionally, we investigate the interaction the CiOi defect with isovalent dopants such as silicon and tin. It is calculated that the CiOi defects will preferentially form near isovalent dopants in germanium. Interestingly the structure of the dopant-CiOi defects is different with the Sn residing next to the Oi whereas the Si atom bonds with the Ci. The differences in the structure of CiOi defects in the vicinity of isovalent dopants are discussed.
UR - https://link.springer.com/article/10.1007/s10854-017-8372-6#citeas
U2 - 10.1007/s10854-017-8372-6
DO - 10.1007/s10854-017-8372-6
M3 - Article
SN - 0957-4522
VL - 29
SP - 4261
EP - 4265
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
IS - 5
ER -