Investigation on Single and Split Output Gate Configurations Influence on the GaN-HEMTs Switching Behaviours

Xuyang Lu, Arnaud Videt, Nadir Idir, Vlad Marsic, Petar Igic, Soroush Faramehr

Research output: Chapter in Book/Report/Conference proceedingConference proceedingpeer-review

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This work investigates the power GaN-HEMTs switching behaviour differences resulted from usage of two gate driving configurations: single and split outputs. The analysis based on simulation and experimental results show that GaN-HEMTs could switch slower and cause higher switching losses when the split output configuration is used. This is because the output capacitance (Coss) of MOSFETs inside gate driver will be charged during the turn-on process of GaN-HEMTs, and this charging process can reduce the charging speed of input capacitance (Ciss) of GaN-HEMTs. Moreover, the gate resistance and parasitic inductance are the main parameters selected for analysis, and their distribution can amplify this effect by increasing the impedance ratio of turn-on and turn-off loop. This research provides guiding suggestions for gate driver and high-efficiency GaN-HEMTs power module design.

Original languageEnglish
Title of host publication2023 25th European Conference on Power Electronics and Applications, EPE 2023 ECCE Europe
Number of pages9
ISBN (Electronic)978-9-0758-1541-2
ISBN (Print)979-8-3503-1678-0
Publication statusE-pub ahead of print - 2 Oct 2023
Event25th European Conference on Power Electronics and Applications - Aalborg, Denmark
Duration: 4 Sept 20238 Sept 2023


Conference25th European Conference on Power Electronics and Applications
Abbreviated titleEPE'23 ECCE Europe
Internet address

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  • Gallium Nitride (GaN)
  • HEMTs
  • Intelligent gate driver
  • Parasitic elements
  • Switching losses

ASJC Scopus subject areas

  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering


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