Abstract
This work investigates the power GaN-HEMTs switching behaviour differences resulted from usage of two gate driving configurations: single and split outputs. The analysis based on simulation and experimental results show that GaN-HEMTs could switch slower and cause higher switching losses when the split output configuration is used. This is because the output capacitance (Coss) of MOSFETs inside gate driver will be charged during the turn-on process of GaN-HEMTs, and this charging process can reduce the charging speed of input capacitance (Ciss) of GaN-HEMTs. Moreover, the gate resistance and parasitic inductance are the main parameters selected for analysis, and their distribution can amplify this effect by increasing the impedance ratio of turn-on and turn-off loop. This research provides guiding suggestions for gate driver and high-efficiency GaN-HEMTs power module design.
Original language | English |
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Title of host publication | 2023 25th European Conference on Power Electronics and Applications, EPE 2023 ECCE Europe |
Publisher | IEEE |
Pages | 1-9 |
Number of pages | 9 |
ISBN (Electronic) | 978-9-0758-1541-2 |
ISBN (Print) | 979-8-3503-1678-0 |
DOIs | |
Publication status | E-pub ahead of print - 2 Oct 2023 |
Event | 25th European Conference on Power Electronics and Applications - Aalborg, Denmark Duration: 4 Sept 2023 → 8 Sept 2023 https://epe2023.com/ |
Conference
Conference | 25th European Conference on Power Electronics and Applications |
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Abbreviated title | EPE'23 ECCE Europe |
Country/Territory | Denmark |
City | Aalborg |
Period | 4/09/23 → 8/09/23 |
Internet address |
Bibliographical note
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Keywords
- Gallium Nitride (GaN)
- HEMTs
- Intelligent gate driver
- Parasitic elements
- Switching losses
ASJC Scopus subject areas
- Energy Engineering and Power Technology
- Electrical and Electronic Engineering