Investigation of the thermal stress field in a multilevel aluminium metallization in VLSI systems using finite element modelling approach

P. M. Igic, P. A. Mawby

Research output: Chapter in Book/Report/Conference proceedingConference proceeding

1 Citation (Scopus)

Abstract

The impact of a titanium barrier layer on the residual thermal stress in passivated multilevel aluminium metallization structure (Al lines and connecting via) is investigated using an advanced finite element approach. It is confirmed that the titanium, when is presented in the structure, can significantly improve the reliability of the Al metallization.

Original languageEnglish
Title of host publication2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings
PublisherIEEE Computer Society
Pages347-350
Number of pages4
ISBN (Print)0780352351, 9780780352353
DOIs
Publication statusPublished - 6 Aug 2000
Externally publishedYes
Event2000 22nd International Conference on Microelectronics, MIEL 2000 - Nis, Serbia
Duration: 14 May 200017 May 2000

Publication series

Name2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings
Volume1

Conference

Conference2000 22nd International Conference on Microelectronics, MIEL 2000
CountrySerbia
CityNis
Period14/05/0017/05/00

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Engineering(all)

Fingerprint Dive into the research topics of 'Investigation of the thermal stress field in a multilevel aluminium metallization in VLSI systems using finite element modelling approach'. Together they form a unique fingerprint.

Cite this