New compact models of the IGBTs (both non-punch through IGBT (NPTIGBT) and punch-through IGBT (PTIGBT)) are presented in this paper. The models are implemented in the SABER circuit simulator and used for a study of IGBT anode current and voltage characteristics during a device turn-off (clamped inductive load circuit with gate controlled turn-off), since these parts of the transient characteristics essentially predict the power dissipation (V × I) inside the device. It is shown that PTIGBTs are faster than NPTIGBTs, this becoming more apparent at higher clamp voltages.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Safety, Risk, Reliability and Quality
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering