Investigation of the power dissipation during IGBT turn-off using a new physics-based IGBT compact model

P. M. Igic; P. A. Mawby; M. S. Towers; W. Jamal; S. Batcup

doi:10.1016/S0026-2714(02)00016-1

Investigation of the power dissipation during IGBT turn-off using a new physics-based IGBT compact model

P. M. Igic, P. A. Mawby, M. S. Towers, W. Jamal, S. Batcup

Swansea University

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

New compact models of the IGBTs (both non-punch through IGBT (NPTIGBT) and punch-through IGBT (PTIGBT)) are presented in this paper. The models are implemented in the SABER circuit simulator and used for a study of IGBT anode current and voltage characteristics during a device turn-off (clamped inductive load circuit with gate controlled turn-off), since these parts of the transient characteristics essentially predict the power dissipation (V × I) inside the device. It is shown that PTIGBTs are faster than NPTIGBTs, this becoming more apparent at higher clamp voltages.

Original language	English
Pages (from-to)	1045-1052
Number of pages	8
Journal	Microelectronics Reliability
Volume	42
Issue number	7
Early online date	14 Feb 2002
DOIs	https://doi.org/10.1016/S0026-2714(02)00016-1
Publication status	Published - 1 Jul 2002
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Safety, Risk, Reliability and Quality
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/S0026-2714(02)00016-1

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title = "Investigation of the power dissipation during IGBT turn-off using a new physics-based IGBT compact model",

abstract = "New compact models of the IGBTs (both non-punch through IGBT (NPTIGBT) and punch-through IGBT (PTIGBT)) are presented in this paper. The models are implemented in the SABER circuit simulator and used for a study of IGBT anode current and voltage characteristics during a device turn-off (clamped inductive load circuit with gate controlled turn-off), since these parts of the transient characteristics essentially predict the power dissipation (V × I) inside the device. It is shown that PTIGBTs are faster than NPTIGBTs, this becoming more apparent at higher clamp voltages.",

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AU - Igic, P. M.

AU - Mawby, P. A.

AU - Towers, M. S.

AU - Jamal, W.

AU - Batcup, S.

PY - 2002/7/1

Y1 - 2002/7/1

N2 - New compact models of the IGBTs (both non-punch through IGBT (NPTIGBT) and punch-through IGBT (PTIGBT)) are presented in this paper. The models are implemented in the SABER circuit simulator and used for a study of IGBT anode current and voltage characteristics during a device turn-off (clamped inductive load circuit with gate controlled turn-off), since these parts of the transient characteristics essentially predict the power dissipation (V × I) inside the device. It is shown that PTIGBTs are faster than NPTIGBTs, this becoming more apparent at higher clamp voltages.

AB - New compact models of the IGBTs (both non-punch through IGBT (NPTIGBT) and punch-through IGBT (PTIGBT)) are presented in this paper. The models are implemented in the SABER circuit simulator and used for a study of IGBT anode current and voltage characteristics during a device turn-off (clamped inductive load circuit with gate controlled turn-off), since these parts of the transient characteristics essentially predict the power dissipation (V × I) inside the device. It is shown that PTIGBTs are faster than NPTIGBTs, this becoming more apparent at higher clamp voltages.

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Investigation of the power dissipation during IGBT turn-off using a new physics-based IGBT compact model

Abstract

ASJC Scopus subject areas

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