Investigation of the power dissipation during IGBT turn-off using a new physics-based IGBT compact model

P. M. Igic, P. A. Mawby, M. S. Towers, W. Jamal, S. Batcup

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

New compact models of the IGBTs (both non-punch through IGBT (NPTIGBT) and punch-through IGBT (PTIGBT)) are presented in this paper. The models are implemented in the SABER circuit simulator and used for a study of IGBT anode current and voltage characteristics during a device turn-off (clamped inductive load circuit with gate controlled turn-off), since these parts of the transient characteristics essentially predict the power dissipation (V × I) inside the device. It is shown that PTIGBTs are faster than NPTIGBTs, this becoming more apparent at higher clamp voltages.

Original languageEnglish
Pages (from-to)1045-1052
Number of pages8
JournalMicroelectronics Reliability
Volume42
Issue number7
Early online date14 Feb 2002
DOIs
Publication statusPublished - 1 Jul 2002
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Safety, Risk, Reliability and Quality
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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