Influence of thermal processing on the electrical characteristics of MOS capacitors on strained-silicon substrates

N. Kelaidis, V. Ioannou-Sougleridis, D. Skarlatos, C. Tsamis, C. A. Krontiras, S. N. Georga, B. Kellerman, M. Seacrist

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)
45 Downloads (Pure)

Abstract

In this work the influence of thermal oxidation and subsequent thermal processing on the electrical characteristics of strained-Silicon (s-Si), MOS capacitors was studied. Strained-Si/Si1 - xGex/Si substrates of two different strain levels (10% and 22% Ge content) were oxidized within the temperature range of 800 °C to 900 °C for various time intervals. Capacitance-Voltage measurements reveal that the response of the MOS capacitors depends mainly upon two factors: a) the extend of the s-Si layer oxidation, i.e. the remaining s-Si thickness and b) the duration of the post-oxidation annealing in inert ambient. Both factors influence the interfacial properties of the structures. Additional oxidation experiments in N2O ambient indicate a significant influence of the process conditions on the quality of the oxidized structures.

Original languageEnglish
Pages (from-to)350-352
Number of pages3
JournalThin Solid Films
Volume517
Issue number1
DOIs
Publication statusPublished - 3 Nov 2008
Externally publishedYes

Keywords

  • Oxidation
  • Oxynitridation
  • Strained-Silicon
  • Thermal budget

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Influence of thermal processing on the electrical characteristics of MOS capacitors on strained-silicon substrates'. Together they form a unique fingerprint.

Cite this