Influence of thermal processing on the electrical characteristics of MOS capacitors on strained-silicon substrates

N. Kelaidis; V. Ioannou-Sougleridis; D. Skarlatos; C. Tsamis; C. A. Krontiras; S. N. Georga; B. Kellerman; M. Seacrist

doi:10.1016/j.tsf.2008.08.111

Influence of thermal processing on the electrical characteristics of MOS capacitors on strained-silicon substrates

N. Kelaidis, V. Ioannou-Sougleridis, D. Skarlatos, C. Tsamis, C. A. Krontiras, S. N. Georga, B. Kellerman, M. Seacrist

Research output: Contribution to journal › Article › peer-review

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Abstract

In this work the influence of thermal oxidation and subsequent thermal processing on the electrical characteristics of strained-Silicon (s-Si), MOS capacitors was studied. Strained-Si/Si_{1 - x}Ge_x/Si substrates of two different strain levels (10% and 22% Ge content) were oxidized within the temperature range of 800 °C to 900 °C for various time intervals. Capacitance-Voltage measurements reveal that the response of the MOS capacitors depends mainly upon two factors: a) the extend of the s-Si layer oxidation, i.e. the remaining s-Si thickness and b) the duration of the post-oxidation annealing in inert ambient. Both factors influence the interfacial properties of the structures. Additional oxidation experiments in N₂O ambient indicate a significant influence of the process conditions on the quality of the oxidized structures.

Original language	English
Pages (from-to)	350-352
Number of pages	3
Journal	Thin Solid Films
Volume	517
Issue number	1
DOIs	https://doi.org/10.1016/j.tsf.2008.08.111
Publication status	Published - 3 Nov 2008
Externally published	Yes

Keywords

Oxidation
Oxynitridation
Strained-Silicon
Thermal budget

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2008.08.111

Post-printAccepted author manuscript, 688 KBLicence: CC BY-NC-ND

Cite this

@article{6e274c6b55484cf8bd8f5a94178fb8bc,

title = "Influence of thermal processing on the electrical characteristics of MOS capacitors on strained-silicon substrates",

abstract = "In this work the influence of thermal oxidation and subsequent thermal processing on the electrical characteristics of strained-Silicon (s-Si), MOS capacitors was studied. Strained-Si/Si1 - xGex/Si substrates of two different strain levels (10% and 22% Ge content) were oxidized within the temperature range of 800 °C to 900 °C for various time intervals. Capacitance-Voltage measurements reveal that the response of the MOS capacitors depends mainly upon two factors: a) the extend of the s-Si layer oxidation, i.e. the remaining s-Si thickness and b) the duration of the post-oxidation annealing in inert ambient. Both factors influence the interfacial properties of the structures. Additional oxidation experiments in N2O ambient indicate a significant influence of the process conditions on the quality of the oxidized structures.",

keywords = "Oxidation, Oxynitridation, Strained-Silicon, Thermal budget",

author = "N. Kelaidis and V. Ioannou-Sougleridis and D. Skarlatos and C. Tsamis and Krontiras, {C. A.} and Georga, {S. N.} and B. Kellerman and M. Seacrist",

year = "2008",

month = nov,

day = "3",

doi = "10.1016/j.tsf.2008.08.111",

language = "English",

volume = "517",

pages = "350--352",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

number = "1",

}

TY - JOUR

T1 - Influence of thermal processing on the electrical characteristics of MOS capacitors on strained-silicon substrates

AU - Kelaidis, N.

AU - Ioannou-Sougleridis, V.

AU - Skarlatos, D.

AU - Tsamis, C.

AU - Krontiras, C. A.

AU - Georga, S. N.

AU - Kellerman, B.

AU - Seacrist, M.

PY - 2008/11/3

Y1 - 2008/11/3

N2 - In this work the influence of thermal oxidation and subsequent thermal processing on the electrical characteristics of strained-Silicon (s-Si), MOS capacitors was studied. Strained-Si/Si1 - xGex/Si substrates of two different strain levels (10% and 22% Ge content) were oxidized within the temperature range of 800 °C to 900 °C for various time intervals. Capacitance-Voltage measurements reveal that the response of the MOS capacitors depends mainly upon two factors: a) the extend of the s-Si layer oxidation, i.e. the remaining s-Si thickness and b) the duration of the post-oxidation annealing in inert ambient. Both factors influence the interfacial properties of the structures. Additional oxidation experiments in N2O ambient indicate a significant influence of the process conditions on the quality of the oxidized structures.

AB - In this work the influence of thermal oxidation and subsequent thermal processing on the electrical characteristics of strained-Silicon (s-Si), MOS capacitors was studied. Strained-Si/Si1 - xGex/Si substrates of two different strain levels (10% and 22% Ge content) were oxidized within the temperature range of 800 °C to 900 °C for various time intervals. Capacitance-Voltage measurements reveal that the response of the MOS capacitors depends mainly upon two factors: a) the extend of the s-Si layer oxidation, i.e. the remaining s-Si thickness and b) the duration of the post-oxidation annealing in inert ambient. Both factors influence the interfacial properties of the structures. Additional oxidation experiments in N2O ambient indicate a significant influence of the process conditions on the quality of the oxidized structures.

KW - Oxidation

KW - Oxynitridation

KW - Strained-Silicon

KW - Thermal budget

UR - http://www.scopus.com/inward/record.url?scp=54949159491&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2008.08.111

DO - 10.1016/j.tsf.2008.08.111

M3 - Article

AN - SCOPUS:54949159491

SN - 0040-6090

VL - 517

SP - 350

EP - 352

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1

ER -

Influence of thermal processing on the electrical characteristics of MOS capacitors on strained-silicon substrates

Abstract

Keywords

ASJC Scopus subject areas

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