Abstract
In this work the influence of thermal oxidation and subsequent thermal processing on the electrical characteristics of strained-Silicon (s-Si), MOS capacitors was studied. Strained-Si/Si1 - xGex/Si substrates of two different strain levels (10% and 22% Ge content) were oxidized within the temperature range of 800 °C to 900 °C for various time intervals. Capacitance-Voltage measurements reveal that the response of the MOS capacitors depends mainly upon two factors: a) the extend of the s-Si layer oxidation, i.e. the remaining s-Si thickness and b) the duration of the post-oxidation annealing in inert ambient. Both factors influence the interfacial properties of the structures. Additional oxidation experiments in N2O ambient indicate a significant influence of the process conditions on the quality of the oxidized structures.
Original language | English |
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Pages (from-to) | 350-352 |
Number of pages | 3 |
Journal | Thin Solid Films |
Volume | 517 |
Issue number | 1 |
DOIs | |
Publication status | Published - 3 Nov 2008 |
Externally published | Yes |
Keywords
- Oxidation
- Oxynitridation
- Strained-Silicon
- Thermal budget
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry