Influence of high pressure on the temperature dependence of electrical resistivity of Y1-xPrxBa2Cu3O7-δ single crystals

G. Ya Khadzhaj; A. V. Matsepulin; A. Chroneos; L. L. Goulatis; R. V. Vovk

doi:10.1016/j.ssc.2021.114205

Influence of high pressure on the temperature dependence of electrical resistivity of Y_1-xPr_xBa₂Cu₃O_7-δ single crystals

G. Ya Khadzhaj
, A. V. Matsepulin
, A. Chroneos
, L. L. Goulatis
, R. V. Vovk

College of Engineering, Environment & Science

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The effect of hydrostatic pressure up to 12 kbar on electrical resistance in the basal ab-plane of optimally oxygen-doped Y_1–xPr_xBa₂Cu₃O_7–δ single crystals doped with praseodymium (х≈0.23) has been investigated. It was determined that the introduction of praseodymium leads to a fivefold increase in the baric derivative dT_c/dP at zero pressure; however, as the pressure rises, dT_c/dP decreases to a level characteristic of undoped Y_1–xPr_xBa₂Cu₃O_7–δ samples with an optimal oxygen content.

Original language	English
Article number	114205
Journal	Solid State Communications
Volume	327
Early online date	16 Jan 2021
DOIs	https://doi.org/10.1016/j.ssc.2021.114205
Publication status	Published - Mar 2021

Bibliographical note

Publisher Copyright:
© 2021

Copyright:
Copyright 2021 Elsevier B.V., All rights reserved.

Keywords

Baric derivatives
Doping with praseodymium
Hydrostatic pressure
Phase separation
YPrBaCuO single crystals

ASJC Scopus subject areas

General Chemistry
Condensed Matter Physics
Materials Chemistry

Access to Document

10.1016/j.ssc.2021.114205

Cite this

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title = "Influence of high pressure on the temperature dependence of electrical resistivity of Y1-xPrxBa2Cu3O7-δ single crystals",

abstract = "The effect of hydrostatic pressure up to 12 kbar on electrical resistance in the basal ab-plane of optimally oxygen-doped Y1–xPrxBa2Cu3O7–δ single crystals doped with praseodymium (х≈0.23) has been investigated. It was determined that the introduction of praseodymium leads to a fivefold increase in the baric derivative dTc/dP at zero pressure; however, as the pressure rises, dTc/dP decreases to a level characteristic of undoped Y1–xPrxBa2Cu3O7–δ samples with an optimal oxygen content.",

keywords = "Baric derivatives, Doping with praseodymium, Hydrostatic pressure, Phase separation, YPrBaCuO single crystals",

author = "Khadzhaj, \{G. Ya\} and Matsepulin, \{A. V.\} and A. Chroneos and Goulatis, \{L. L.\} and Vovk, \{R. V.\}",

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doi = "10.1016/j.ssc.2021.114205",

language = "English",

volume = "327",

journal = "Solid State Communications",

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T1 - Influence of high pressure on the temperature dependence of electrical resistivity of Y1-xPrxBa2Cu3O7-δ single crystals

AU - Khadzhaj, G. Ya

AU - Matsepulin, A. V.

AU - Chroneos, A.

AU - Goulatis, L. L.

AU - Vovk, R. V.

PY - 2021/3

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N2 - The effect of hydrostatic pressure up to 12 kbar on electrical resistance in the basal ab-plane of optimally oxygen-doped Y1–xPrxBa2Cu3O7–δ single crystals doped with praseodymium (х≈0.23) has been investigated. It was determined that the introduction of praseodymium leads to a fivefold increase in the baric derivative dTc/dP at zero pressure; however, as the pressure rises, dTc/dP decreases to a level characteristic of undoped Y1–xPrxBa2Cu3O7–δ samples with an optimal oxygen content.

AB - The effect of hydrostatic pressure up to 12 kbar on electrical resistance in the basal ab-plane of optimally oxygen-doped Y1–xPrxBa2Cu3O7–δ single crystals doped with praseodymium (х≈0.23) has been investigated. It was determined that the introduction of praseodymium leads to a fivefold increase in the baric derivative dTc/dP at zero pressure; however, as the pressure rises, dTc/dP decreases to a level characteristic of undoped Y1–xPrxBa2Cu3O7–δ samples with an optimal oxygen content.

KW - Baric derivatives

KW - Doping with praseodymium

KW - Hydrostatic pressure

KW - Phase separation

KW - YPrBaCuO single crystals

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U2 - 10.1016/j.ssc.2021.114205

DO - 10.1016/j.ssc.2021.114205

M3 - Article

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JO - Solid State Communications

JF - Solid State Communications

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