Improving Current Controllability in Bi-Mode Gate Commutated Thyristors

Neophytos Lophitis; Marina Antoniou; Florin Udrea; Umamaheswara Vemulapati; Martin Arnold; Iulian Nistor; Jan Vobecky; Munaf Rahimo

doi:10.1109/TED.2015.2428994

Improving Current Controllability in Bi-Mode Gate Commutated Thyristors

Neophytos Lophitis, Marina Antoniou, Florin Udrea, Umamaheswara Vemulapati, Martin Arnold, Iulian Nistor, Jan Vobecky, Munaf Rahimo

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

39 Downloads (Pure)

Abstract

The Bi-mode gate commutated thyristor (BGCT) is a new type of reverse conducting Gate Commutated Thyristor (GCT). This paper focuses on the maximum controllable current capability of BGCTs and proposes new solutions which can increase it. The impact of proposed solutions in the turn-ON and turn-OFF is also assessed. For this analysis, a 2-D mixed mode model for full-wafer device simulations has been developed and utilized.

Original language	English
Article number	7112118
Pages (from-to)	2263 - 2269
Number of pages	7
Journal	Electron Devices
Volume	62
Issue number	7
Early online date	22 May 2015
DOIs	https://doi.org/10.1109/TED.2015.2428994
Publication status	Published - Jul 2015
Externally published	Yes

Bibliographical note

© 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

Keywords

semiconductor device models
thyristors
2D mixed mode model
bimode gate commutated thyristors
current controllability
full wafer device simulations
reverse conducting gate commutated thyristor
Full wafer modeling
gate commutated thyristor (GCT)
maximum controllable current (MCC)
safe operating area
thyristor
thyristor.
Anodes
Cathodes
Integrated circuit modeling
Logic gates
Semiconductor device modeling
Semiconductor diodes
Thyristors

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/TED.2015.2428994

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Cite this

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title = "Improving Current Controllability in Bi-Mode Gate Commutated Thyristors",

abstract = "The Bi-mode gate commutated thyristor (BGCT) is a new type of reverse conducting Gate Commutated Thyristor (GCT). This paper focuses on the maximum controllable current capability of BGCTs and proposes new solutions which can increase it. The impact of proposed solutions in the turn-ON and turn-OFF is also assessed. For this analysis, a 2-D mixed mode model for full-wafer device simulations has been developed and utilized.",

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author = "Neophytos Lophitis and Marina Antoniou and Florin Udrea and Umamaheswara Vemulapati and Martin Arnold and Iulian Nistor and Jan Vobecky and Munaf Rahimo",

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year = "2015",

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language = "English",

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AU - Lophitis, Neophytos

AU - Antoniou, Marina

AU - Udrea, Florin

AU - Vemulapati, Umamaheswara

AU - Arnold, Martin

AU - Nistor, Iulian

AU - Vobecky, Jan

AU - Rahimo, Munaf

N1 - © 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

PY - 2015/7

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N2 - The Bi-mode gate commutated thyristor (BGCT) is a new type of reverse conducting Gate Commutated Thyristor (GCT). This paper focuses on the maximum controllable current capability of BGCTs and proposes new solutions which can increase it. The impact of proposed solutions in the turn-ON and turn-OFF is also assessed. For this analysis, a 2-D mixed mode model for full-wafer device simulations has been developed and utilized.

AB - The Bi-mode gate commutated thyristor (BGCT) is a new type of reverse conducting Gate Commutated Thyristor (GCT). This paper focuses on the maximum controllable current capability of BGCTs and proposes new solutions which can increase it. The impact of proposed solutions in the turn-ON and turn-OFF is also assessed. For this analysis, a 2-D mixed mode model for full-wafer device simulations has been developed and utilized.

KW - semiconductor device models

KW - thyristors

KW - 2D mixed mode model

KW - bimode gate commutated thyristors

KW - current controllability

KW - full wafer device simulations

KW - reverse conducting gate commutated thyristor

KW - Full wafer modeling

KW - gate commutated thyristor (GCT)

KW - maximum controllable current (MCC)

KW - safe operating area

KW - thyristor

KW - thyristor.

KW - Anodes

KW - Cathodes

KW - Integrated circuit modeling

KW - Logic gates

KW - Semiconductor device modeling

KW - Semiconductor diodes

KW - Thyristors

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DO - 10.1109/TED.2015.2428994

M3 - Article

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SP - 2263

EP - 2269

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 7

M1 - 7112118

ER -

Improving Current Controllability in Bi-Mode Gate Commutated Thyristors

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

Access to Document

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Cite this