Improving Current Controllability in Bi-Mode Gate Commutated Thyristors

Neophytos Lophitis, Marina Antoniou, Florin Udrea, Umamaheswara Vemulapati, Martin Arnold, Iulian Nistor, Jan Vobecky, Munaf Rahimo

Research output: Contribution to journalArticle

5 Citations (Scopus)
26 Downloads (Pure)

Abstract

The Bi-mode gate commutated thyristor (BGCT) is a new type of reverse conducting Gate Commutated Thyristor (GCT). This paper focuses on the maximum controllable current capability of BGCTs and proposes new solutions which can increase it. The impact of proposed solutions in the turn-ON and turn-OFF is also assessed. For this analysis, a 2-D mixed mode model for full-wafer device simulations has been developed and utilized.
Original languageEnglish
Article number7112118
Pages (from-to)2263 - 2269
Number of pages7
JournalElectron Devices
Volume62
Issue number7
Early online date22 May 2015
DOIs
Publication statusPublished - Jul 2015
Externally publishedYes

Bibliographical note

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Keywords

  • semiconductor device models
  • thyristors
  • 2D mixed mode model
  • bimode gate commutated thyristors
  • current controllability
  • full wafer device simulations
  • reverse conducting gate commutated thyristor
  • Full wafer modeling
  • gate commutated thyristor (GCT)
  • maximum controllable current (MCC)
  • safe operating area
  • thyristor
  • thyristor.
  • Anodes
  • Cathodes
  • Integrated circuit modeling
  • Logic gates
  • Semiconductor device modeling
  • Semiconductor diodes
  • Thyristors

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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  • Cite this

    Lophitis, N., Antoniou, M., Udrea, F., Vemulapati, U., Arnold, M., Nistor, I., ... Rahimo, M. (2015). Improving Current Controllability in Bi-Mode Gate Commutated Thyristors. Electron Devices, 62(7), 2263 - 2269. [7112118]. https://doi.org/10.1109/TED.2015.2428994