Improvement in transient performance of >10kV SiC IGBT with an optimized retrograde p-well

Research output: Contribution to conference › Paper › peer-review

Original language	English
Publication status	Accepted/In press - 2019
Event	International Conference on Silicon Carbide and Related Materials 2019 - Kyoto International Conference Center, Kyoto, Japan Duration: 29 Sept 2019 → 4 Oct 2019 https://www.icscrm2019.org/

Conference	International Conference on Silicon Carbide and Related Materials 2019
Abbreviated title	ICSCRM 2019
Country/Territory	Japan
City	Kyoto
Period	29/09/19 → 4/10/19
Internet address	https://www.icscrm2019.org/

Underpinning Power Electronics 2017
Lophitis, N. (Principal Investigator)
1/08/17 → 31/07/20
Project: Research

Cite this

@conference{a0ccc26654f14c679ef738b6776875d8,

title = "Improvement in transient performance of >10kV SiC IGBT with an optimized retrograde p-well",

author = "\{K. Tiwari\}, Amit and Marina Antoniou and Samuel Perkins and Neophytos Lophitis and Tatjana Trajkovic and Florin Udrea",

year = "2019",

language = "English",

note = "International Conference on Silicon Carbide and Related Materials 2019, ICSCRM 2019 ; Conference date: 29-09-2019 Through 04-10-2019",

url = "https://www.icscrm2019.org/",

}

TY - CONF

T1 - Improvement in transient performance of >10kV SiC IGBT with an optimized retrograde p-well

AU - K. Tiwari, Amit

AU - Antoniou, Marina

AU - Perkins, Samuel

AU - Lophitis, Neophytos

AU - Trajkovic, Tatjana

AU - Udrea, Florin

PY - 2019

Y1 - 2019

M3 - Paper

T2 - International Conference on Silicon Carbide and Related Materials 2019

Y2 - 29 September 2019 through 4 October 2019

ER -