Improvement in transient performance of >10kV SiC IGBT with an optimized retrograde p-well

Amit K. Tiwari, Marina Antoniou, Samuel Perkins, Neophytos Lophitis, Tatjana Trajkovic, Florin Udrea

Research output: Contribution to conferencePaper

Original languageEnglish
Publication statusAccepted/In press - 2019
EventInternational Conference on Silicon Carbide and Related Materials 2019 - Kyoto International Conference Center, Kyoto, Japan
Duration: 29 Sep 20194 Oct 2019
https://www.icscrm2019.org/

Conference

ConferenceInternational Conference on Silicon Carbide and Related Materials 2019
Abbreviated titleICSCRM 2019
CountryJapan
CityKyoto
Period29/09/194/10/19
Internet address

Cite this

K. Tiwari, A., Antoniou, M., Perkins, S., Lophitis, N., Trajkovic, T., & Udrea, F. (Accepted/In press). Improvement in transient performance of >10kV SiC IGBT with an optimized retrograde p-well. Paper presented at International Conference on Silicon Carbide and Related Materials 2019, Kyoto, Japan.