Impact of V th Instability of Schottky-type p-GaN Gate HEMTs on Switching Behaviors
- Xuyang Lu
- , Arnaud Videt
- , Soroush Faramehr
- , Ke Li
- , Vlad Marsic
- , Petar Igic
- , Nadir Idir
- University of Nottingham
- University of Lille
Research output: Contribution to journal › Article › peer-review
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