Abstract
Schottky-type p-GaN gate Gallium Nitride High Electron Mobility Transistors (GaN-HEMTs) suffer from threshold voltage ( Vth ) instability phenomenon. Both positive and negative Vth shifts are reported when device undertakes the voltage bias, but the impact of this Vth instability phenomenon on device switching behaviors is less investigated. In this study, the drain-source voltage ( Vds ) induced bidirectional Vth shift in hard-switching condition is characterized and decoupled by an H-bridge based double-pulse test (DPT). Subsequently, the influence of Vth shift on switching behaviors is theoretically analyzed and demonstrated through SPICE simulation and experiment, showing how a positive shifted Vth can reduce the device turn-on commutation speed and increase the switching losses, and vice versa. The results suggest that the Vth instability phenomenon should be considered in accurate switching modeling.
| Original language | English |
|---|---|
| Pages (from-to) | 11625-11636 |
| Number of pages | 12 |
| Journal | IEEE Transactions on Power Electronics |
| Volume | 39 |
| Issue number | 9 |
| Early online date | 24 May 2024 |
| DOIs | |
| Publication status | Published - Sept 2024 |
Bibliographical note
© 2024 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.Copyright © and Moral Rights are retained by the author(s) and/ or other copyright owners. A copy can be downloaded for personal non-commercial research or study, without prior permission or charge. This item cannot be reproduced or quoted extensively from without first obtaining permission in writing from the copyright holder(s). The content must not be changed in any way or sold commercially in any format or medium without the formal permission of the copyright holders.
This document is the author’s post-print version, incorporating any revisions agreed during the peer-review process. Some differences between the published version and this version may remain and you are advised to consult the published version if you wish to cite from it
Funder
This work was supported in part by the University of Lille, France, and in part by Coventry University, U.KFunding
This work was supported in part by the University of Lille, France, and in part by Coventry University, U.K
| Funders | Funder number |
|---|---|
| Coventry University | |
| University of Lille |
Keywords
- Neural networks
- power semiconductor devices
- semiconductor device modeling
- switching loss
- threshold voltage
ASJC Scopus subject areas
- Electrical and Electronic Engineering