We disclose a wide band-gap power transistor including a semiconductor substrate (110); a semiconductor drift region (130) of a second conductivity type disposed on the semiconductor substrate (110); a body region (140) of a first conductivity type, opposite the second conductivity type, located within the semiconductor drift region (130); In one embodiment a source region (150) of the second conductivity type is located within the body region (140) and a gate (180) placed above the source region (150), the gate to control charge in a channel region between the semiconductor drift region and the source region and to thereby control flow of charge within the semiconductor drift region. In other embodiments a Schottky metal contact could be formed on the drift region. The body region (140) includes a lateral extension (145) of the first conductivity type extending laterally into the drift region, the lateral extension being spaced from the surface (160) of the transistor. The device may be a vertical MOSFET or a insulated gate bipolar transistor IGBT, and could be used in high voltage applications.
|IPC||H01L 29/10,H01L 29/66|
|Publication status||Published - 23 Mar 2016|