High voltage semiconductor devices

Neophytos Lophitis (Inventor), P. Ward (Inventor), T. Trajkovic (Inventor), F. Udrea (Inventor)

Research output: Patent

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Abstract

We disclose a wide band-gap power transistor including a semiconductor substrate (110); a semiconductor drift region (130) of a second conductivity type disposed on the semiconductor substrate (110); a body region (140) of a first conductivity type, opposite the second conductivity type, located within the semiconductor drift region (130); In one embodiment a source region (150) of the second conductivity type is located within the body region (140) and a gate (180) placed above the source region (150), the gate to control charge in a channel region between the semiconductor drift region and the source region and to thereby control flow of charge within the semiconductor drift region. In other embodiments a Schottky metal contact could be formed on the drift region. The body region (140) includes a lateral extension (145) of the first conductivity type extending laterally into the drift region, the lateral extension being spaced from the surface (160) of the transistor. The device may be a vertical MOSFET or a insulated gate bipolar transistor IGBT, and could be used in high voltage applications.
Original languageEnglish
Patent numberGB2530284 (A)
Publication statusPublished - 23 Mar 2016

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semiconductor devices
high voltages
conductivity
transistors
bipolar transistors
electric contacts
field effect transistors
broadband
metals

Bibliographical note

This published patent is available on the EPO Espacenet database service at: https://worldwide.espacenet.com/publicationDetails/biblio?CC=GB&NR=2530284A&KC=A&FT=D&ND=4&date=20160323&DB=&locale=en_EP.
Published 23 March 2016

Cite this

Lophitis, N., Ward, P., Trajkovic, T., & Udrea, F. (2016). High voltage semiconductor devices. (Patent No. GB2530284 (A)).

High voltage semiconductor devices. / Lophitis, Neophytos (Inventor); Ward, P. (Inventor); Trajkovic, T. (Inventor); Udrea, F. (Inventor).

Patent No.: GB2530284 (A).

Research output: Patent

Lophitis, N, Ward, P, Trajkovic, T & Udrea, F 2016, High voltage semiconductor devices, Patent No. GB2530284 (A).
Lophitis N, Ward P, Trajkovic T, Udrea F, inventors. High voltage semiconductor devices. GB2530284 (A). 2016 Mar 23.
Lophitis, Neophytos (Inventor) ; Ward, P. (Inventor) ; Trajkovic, T. (Inventor) ; Udrea, F. (Inventor). / High voltage semiconductor devices. Patent No.: GB2530284 (A).
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N2 - We disclose a wide band-gap power transistor including a semiconductor substrate (110); a semiconductor drift region (130) of a second conductivity type disposed on the semiconductor substrate (110); a body region (140) of a first conductivity type, opposite the second conductivity type, located within the semiconductor drift region (130); In one embodiment a source region (150) of the second conductivity type is located within the body region (140) and a gate (180) placed above the source region (150), the gate to control charge in a channel region between the semiconductor drift region and the source region and to thereby control flow of charge within the semiconductor drift region. In other embodiments a Schottky metal contact could be formed on the drift region. The body region (140) includes a lateral extension (145) of the first conductivity type extending laterally into the drift region, the lateral extension being spaced from the surface (160) of the transistor. The device may be a vertical MOSFET or a insulated gate bipolar transistor IGBT, and could be used in high voltage applications.

AB - We disclose a wide band-gap power transistor including a semiconductor substrate (110); a semiconductor drift region (130) of a second conductivity type disposed on the semiconductor substrate (110); a body region (140) of a first conductivity type, opposite the second conductivity type, located within the semiconductor drift region (130); In one embodiment a source region (150) of the second conductivity type is located within the body region (140) and a gate (180) placed above the source region (150), the gate to control charge in a channel region between the semiconductor drift region and the source region and to thereby control flow of charge within the semiconductor drift region. In other embodiments a Schottky metal contact could be formed on the drift region. The body region (140) includes a lateral extension (145) of the first conductivity type extending laterally into the drift region, the lateral extension being spaced from the surface (160) of the transistor. The device may be a vertical MOSFET or a insulated gate bipolar transistor IGBT, and could be used in high voltage applications.

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