High sensitivity magnetic sensors compatible with bulk silicon and SOI IC technology

Petar Igic; Olga Kryvchenkova; Soroush Faramehr; Stephen Batcup; Nebojsa Jankovic

doi:10.1109/MIEL.2017.8190068

High sensitivity magnetic sensors compatible with bulk silicon and SOI IC technology

Petar Igic
, Olga Kryvchenkova
, Soroush Faramehr
, Stephen Batcup
, Nebojsa Jankovic

Swansea University
University of Niš

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding › peer-review

12 Citations (Scopus)

Abstract

This paper presents state of the art split drain current magnetic sensors fully compatible with the bulk silicon and SOI technology. While lateral double-diffused magnetic sensitive MOSFET with integrated n-type Hall plate exhibits an order of magnitude higher relative current magnetic sensitivity compering with the conventional split drain silicon MagFETs, novel dual-gate four-terminal magnetic sensor brings a step-change in the integrated magnetic sensor's performance. Finally, a potential of GaN split current magnetic sensitive HEMT has been discussed.

Original language	English
Title of host publication	2017 IEEE 30th International Conference on Microelectronics (MIEL)
Publisher	IEEE
Pages	55-59
Number of pages	5
ISBN (Electronic)	978-1-5386-2563-7
ISBN (Print)	978-1-5386-2561-3
DOIs	https://doi.org/10.1109/MIEL.2017.8190068
Publication status	Published - 14 Dec 2017
Externally published	Yes
Event	2017 IEEE 30th International Conference on Microelectronics - Nis, Serbia Duration: 9 Oct 2017 → 11 Oct 2017 Conference number: 30th

Publication series

Name
ISSN (Electronic)	2159-1679

Conference

Conference	2017 IEEE 30th International Conference on Microelectronics
Abbreviated title	MIEL
Country/Territory	Serbia
City	Nis
Period	9/10/17 → 11/10/17

Keywords

Sensitivity
Magnetic sensors
Magnetic fields
Saturation magnetization
Silicon
Gallium nitride

Access to Document

10.1109/MIEL.2017.8190068

Cite this

@inproceedings{330dd162124d4d51a242eeddbb03f28d,

title = "High sensitivity magnetic sensors compatible with bulk silicon and SOI IC technology",

abstract = "This paper presents state of the art split drain current magnetic sensors fully compatible with the bulk silicon and SOI technology. While lateral double-diffused magnetic sensitive MOSFET with integrated n-type Hall plate exhibits an order of magnitude higher relative current magnetic sensitivity compering with the conventional split drain silicon MagFETs, novel dual-gate four-terminal magnetic sensor brings a step-change in the integrated magnetic sensor's performance. Finally, a potential of GaN split current magnetic sensitive HEMT has been discussed.",

keywords = "Sensitivity, Magnetic sensors, Magnetic fields, Saturation magnetization, Silicon, Gallium nitride",

author = "Petar Igic and Olga Kryvchenkova and Soroush Faramehr and Stephen Batcup and Nebojsa Jankovic",

year = "2017",

month = dec,

day = "14",

doi = "10.1109/MIEL.2017.8190068",

language = "English",

isbn = "978-1-5386-2561-3",

publisher = "IEEE",

pages = "55--59",

booktitle = "2017 IEEE 30th International Conference on Microelectronics (MIEL)",

address = "United States",

note = "2017 IEEE 30th International Conference on Microelectronics , MIEL ; Conference date: 09-10-2017 Through 11-10-2017",

}

TY - GEN

T1 - High sensitivity magnetic sensors compatible with bulk silicon and SOI IC technology

AU - Igic, Petar

AU - Kryvchenkova, Olga

AU - Faramehr, Soroush

AU - Batcup, Stephen

AU - Jankovic, Nebojsa

N1 - Conference code: 30th

PY - 2017/12/14

Y1 - 2017/12/14

N2 - This paper presents state of the art split drain current magnetic sensors fully compatible with the bulk silicon and SOI technology. While lateral double-diffused magnetic sensitive MOSFET with integrated n-type Hall plate exhibits an order of magnitude higher relative current magnetic sensitivity compering with the conventional split drain silicon MagFETs, novel dual-gate four-terminal magnetic sensor brings a step-change in the integrated magnetic sensor's performance. Finally, a potential of GaN split current magnetic sensitive HEMT has been discussed.

AB - This paper presents state of the art split drain current magnetic sensors fully compatible with the bulk silicon and SOI technology. While lateral double-diffused magnetic sensitive MOSFET with integrated n-type Hall plate exhibits an order of magnitude higher relative current magnetic sensitivity compering with the conventional split drain silicon MagFETs, novel dual-gate four-terminal magnetic sensor brings a step-change in the integrated magnetic sensor's performance. Finally, a potential of GaN split current magnetic sensitive HEMT has been discussed.

KW - Sensitivity

KW - Magnetic sensors

KW - Magnetic fields

KW - Saturation magnetization

KW - Silicon

KW - Gallium nitride

U2 - 10.1109/MIEL.2017.8190068

DO - 10.1109/MIEL.2017.8190068

M3 - Conference proceeding

SN - 978-1-5386-2561-3

SP - 55

EP - 59

BT - 2017 IEEE 30th International Conference on Microelectronics (MIEL)

PB - IEEE

T2 - 2017 IEEE 30th International Conference on Microelectronics

Y2 - 9 October 2017 through 11 October 2017

ER -

High sensitivity magnetic sensors compatible with bulk silicon and SOI IC technology

Abstract

Publication series

Conference

Keywords

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Cite this