High sensitivity magnetic sensors compatible with bulk silicon and SOI IC technology

Petar Igic, Olga Kryvchenkova, Soroush Faramehr, Stephen Batcup, Nebojsa Jankovic

Research output: Chapter in Book/Report/Conference proceedingConference proceeding

1 Citation (Scopus)

Abstract

This paper presents state of the art split drain current magnetic sensors fully compatible with the bulk silicon and SOI technology. While lateral double-diffused magnetic sensitive MOSFET with integrated n-type Hall plate exhibits an order of magnitude higher relative current magnetic sensitivity compering with the conventional split drain silicon MagFETs, novel dual-gate four-terminal magnetic sensor brings a step-change in the integrated magnetic sensor's performance. Finally, a potential of GaN split current magnetic sensitive HEMT has been discussed.
Original languageEnglish
Title of host publication 2017 IEEE 30th International Conference on Microelectronics (MIEL)
PublisherIEEE
Pages55-59
Number of pages5
ISBN (Electronic)978-1-5386-2563-7
ISBN (Print)978-1-5386-2561-3
DOIs
Publication statusPublished - 14 Dec 2017
Externally publishedYes
Event2017 IEEE 30th International Conference on Microelectronics - Nis, Serbia
Duration: 9 Oct 201711 Oct 2017
Conference number: 30th

Publication series

Name
ISSN (Electronic)2159-1679

Conference

Conference2017 IEEE 30th International Conference on Microelectronics
Abbreviated titleMIEL
CountrySerbia
CityNis
Period9/10/1711/10/17

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Keywords

  • Sensitivity
  • Magnetic sensors
  • Magnetic fields
  • Saturation magnetization
  • Silicon
  • Gallium nitride

Cite this

Igic, P., Kryvchenkova, O., Faramehr, S., Batcup, S., & Jankovic, N. (2017). High sensitivity magnetic sensors compatible with bulk silicon and SOI IC technology. In 2017 IEEE 30th International Conference on Microelectronics (MIEL) (pp. 55-59). IEEE. https://doi.org/10.1109/MIEL.2017.8190068