Abstract
This paper presents state of the art split drain current magnetic sensors fully compatible with the bulk silicon and SOI technology. While lateral double-diffused magnetic sensitive MOSFET with integrated n-type Hall plate exhibits an order of magnitude higher relative current magnetic sensitivity compering with the conventional split drain silicon MagFETs, novel dual-gate four-terminal magnetic sensor brings a step-change in the integrated magnetic sensor's performance. Finally, a potential of GaN split current magnetic sensitive HEMT has been discussed.
Original language | English |
---|---|
Title of host publication | 2017 IEEE 30th International Conference on Microelectronics (MIEL) |
Publisher | IEEE |
Pages | 55-59 |
Number of pages | 5 |
ISBN (Electronic) | 978-1-5386-2563-7 |
ISBN (Print) | 978-1-5386-2561-3 |
DOIs | |
Publication status | Published - 14 Dec 2017 |
Externally published | Yes |
Event | 2017 IEEE 30th International Conference on Microelectronics - Nis, Serbia Duration: 9 Oct 2017 → 11 Oct 2017 Conference number: 30th |
Publication series
Name | |
---|---|
ISSN (Electronic) | 2159-1679 |
Conference
Conference | 2017 IEEE 30th International Conference on Microelectronics |
---|---|
Abbreviated title | MIEL |
Country/Territory | Serbia |
City | Nis |
Period | 9/10/17 → 11/10/17 |
Keywords
- Sensitivity
- Magnetic sensors
- Magnetic fields
- Saturation magnetization
- Silicon
- Gallium nitride