High sensitivity magnetic sensors compatible with bulk silicon and SOI IC technology

Petar Igic, Olga Kryvchenkova, Soroush Faramehr, Stephen Batcup, Nebojsa Jankovic

Research output: Chapter in Book/Report/Conference proceedingConference proceeding

1 Citation (Scopus)

Abstract

This paper presents state of the art split drain current magnetic sensors fully compatible with the bulk silicon and SOI technology. While lateral double-diffused magnetic sensitive MOSFET with integrated n-type Hall plate exhibits an order of magnitude higher relative current magnetic sensitivity compering with the conventional split drain silicon MagFETs, novel dual-gate four-terminal magnetic sensor brings a step-change in the integrated magnetic sensor's performance. Finally, a potential of GaN split current magnetic sensitive HEMT has been discussed.
Original languageEnglish
Title of host publication 2017 IEEE 30th International Conference on Microelectronics (MIEL)
PublisherIEEE
Pages55-59
Number of pages5
ISBN (Electronic)978-1-5386-2563-7
ISBN (Print)978-1-5386-2561-3
DOIs
Publication statusPublished - 14 Dec 2017
Externally publishedYes
Event2017 IEEE 30th International Conference on Microelectronics - Nis, Serbia
Duration: 9 Oct 201711 Oct 2017
Conference number: 30th

Publication series

Name
ISSN (Electronic)2159-1679

Conference

Conference2017 IEEE 30th International Conference on Microelectronics
Abbreviated titleMIEL
CountrySerbia
CityNis
Period9/10/1711/10/17

Fingerprint

SOI (semiconductors)
sensitivity
sensors
silicon
high electron mobility transistors
field effect transistors

Keywords

  • Sensitivity
  • Magnetic sensors
  • Magnetic fields
  • Saturation magnetization
  • Silicon
  • Gallium nitride

Cite this

Igic, P., Kryvchenkova, O., Faramehr, S., Batcup, S., & Jankovic, N. (2017). High sensitivity magnetic sensors compatible with bulk silicon and SOI IC technology. In 2017 IEEE 30th International Conference on Microelectronics (MIEL) (pp. 55-59). IEEE. https://doi.org/10.1109/MIEL.2017.8190068

High sensitivity magnetic sensors compatible with bulk silicon and SOI IC technology. / Igic, Petar; Kryvchenkova, Olga; Faramehr, Soroush; Batcup, Stephen; Jankovic, Nebojsa.

2017 IEEE 30th International Conference on Microelectronics (MIEL). IEEE, 2017. p. 55-59.

Research output: Chapter in Book/Report/Conference proceedingConference proceeding

Igic, P, Kryvchenkova, O, Faramehr, S, Batcup, S & Jankovic, N 2017, High sensitivity magnetic sensors compatible with bulk silicon and SOI IC technology. in 2017 IEEE 30th International Conference on Microelectronics (MIEL). IEEE, pp. 55-59, 2017 IEEE 30th International Conference on Microelectronics , Nis, Serbia, 9/10/17. https://doi.org/10.1109/MIEL.2017.8190068
Igic P, Kryvchenkova O, Faramehr S, Batcup S, Jankovic N. High sensitivity magnetic sensors compatible with bulk silicon and SOI IC technology. In 2017 IEEE 30th International Conference on Microelectronics (MIEL). IEEE. 2017. p. 55-59 https://doi.org/10.1109/MIEL.2017.8190068
Igic, Petar ; Kryvchenkova, Olga ; Faramehr, Soroush ; Batcup, Stephen ; Jankovic, Nebojsa. / High sensitivity magnetic sensors compatible with bulk silicon and SOI IC technology. 2017 IEEE 30th International Conference on Microelectronics (MIEL). IEEE, 2017. pp. 55-59
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