High sensitivity dual-gate four-terminal magnetic sensor compatible with SOI Fin FET technology

Nebojsa Jankovic, Olga Kryvchenkova, Steve Batcup, Petar Igic

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

This letter presents a novel device concept of split-current magnetic sensor that is fully compatible with silicon-on-insulator(SOI) FinFET technology.The fabricated dual-gate four-terminal device brings a step change in SOI integrated sensor capabilities, and its measured currentrelated relative sensitivity is as high as 3400% T-1 at 2 μA of total supply current. The device's very high sensitivity is attributed to its novel current conduction phenomena and the internal magnetic deflection enhancement loop demonstrated using 3-D TCAD numerical simulations. This new magnetic sensor is a very promising candidate for the next generation of magnetic sensitive smart-power integrated circuits.

Original languageEnglish
Article number7898485
Pages (from-to)810-813
Number of pages4
JournalIEEE Electron Device Letters
Volume38
Issue number6
Early online date12 Apr 2017
DOIs
Publication statusPublished - 1 Jun 2017
Externally publishedYes

Keywords

  • dual gate
  • FinFET
  • IC.
  • magnetic sensor
  • SOI
  • splitcurrent

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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