This letter presents a novel device concept of split-current magnetic sensor that is fully compatible with silicon-on-insulator(SOI) FinFET technology.The fabricated dual-gate four-terminal device brings a step change in SOI integrated sensor capabilities, and its measured currentrelated relative sensitivity is as high as 3400% T-1 at 2 μA of total supply current. The device's very high sensitivity is attributed to its novel current conduction phenomena and the internal magnetic deflection enhancement loop demonstrated using 3-D TCAD numerical simulations. This new magnetic sensor is a very promising candidate for the next generation of magnetic sensitive smart-power integrated circuits.
- dual gate
- magnetic sensor
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering