Abstract
This letter presents a novel device concept of split-current magnetic sensor that is fully compatible with silicon-on-insulator(SOI) FinFET technology.The fabricated dual-gate four-terminal device brings a step change in SOI integrated sensor capabilities, and its measured currentrelated relative sensitivity is as high as 3400% T-1 at 2 μA of total supply current. The device's very high sensitivity is attributed to its novel current conduction phenomena and the internal magnetic deflection enhancement loop demonstrated using 3-D TCAD numerical simulations. This new magnetic sensor is a very promising candidate for the next generation of magnetic sensitive smart-power integrated circuits.
| Original language | English |
|---|---|
| Article number | 7898485 |
| Pages (from-to) | 810-813 |
| Number of pages | 4 |
| Journal | IEEE Electron Device Letters |
| Volume | 38 |
| Issue number | 6 |
| Early online date | 12 Apr 2017 |
| DOIs | |
| Publication status | Published - 1 Jun 2017 |
| Externally published | Yes |
Keywords
- dual gate
- FinFET
- IC.
- magnetic sensor
- SOI
- splitcurrent
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
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Petar Igic
- Centre for E-Mobility and Clean Growth - Professor in Power Semiconductor Applications
Person: Teaching and Research