High Bandwidth GaN-Based Micro-LEDs for Multi-Gb/s Visible Light Communications

R. X. G. Ferreira, E. Xie, J. J. D. McKendry, Sujan Rajbhandari, H. Chun, G. Faulkner, S. Watson, A. E. Kelly, E. Gu, R. V. Penty, I. H. White, D. C. O’Brien, M. D. Dawson

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Gallium-nitride (GaN)-based light-emitting diodes (LEDs) are highly efficient sources for general purpose illumination. Visible light communications (VLC) uses these sources to supplement existing wireless communications by offering a large, licence-free region of optical spectrum. Here, we report on progress in the development of micro-scale GaN LEDs (micro-LEDs), optimized for VLC. These blue-emitting micro-LEDs are shown to have very high electrical-to-optical modulation bandwidths, exceeding 800 MHz. The data transmission capabilities of the micro-LEDs are illustrated by demonstrations using ON-OFF-keying, pulse-amplitude modulation, and orthogonal frequency division multiplexing modulation schemes to transmit data over free space at the rates of 1.7, 3.4, and 5 Gb/s, respectively.
Original languageEnglish
Pages (from-to)2023-2026
JournalIEEE Photonics Technology Letters
Issue number19
Early online date15 Jun 2016
Publication statusPublished - 1 Oct 2016

Bibliographical note

This work is licensed under a Creative Commons Attribution 3.0 License. For more information, see http://creativecommons.org/licenses/by/3.0/


  • Light emitting diodes
  • Bandwidth
  • Modulation
  • Current density
  • OFDM
  • Data communication
  • Bit error rate
  • pulse amplitude modulation
  • amplitude shift keying
  • free-space optical communication
  • gallium compounds
  • III-V semiconductors
  • integrated optoelectronics
  • light emitting diodes
  • OFDM modulation
  • optical communication equipment
  • PAM
  • micro light-emitting diodes
  • GaN
  • optical communication
  • visible-light communication


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