>10kV 4H-SiC n-IGBTs for Elevated Temperature Environments

Samuel Perkins, Marina Antoniou, Amit K. Tiwari, Anastasios Arvanitopoulos, T. Trajkovic, Florin Udrea, Neophytos Lophitis

Research output: Contribution to conferencePaper

Abstract

In this work we explore the appropriate design parameters which will enable the fabrication of a >10kVn-Channel IGBT. In particular, we emphasize the reduction of device blocking capabilities for high temperature environments. Moreover, this work shows that the SiC device design optimization methodology needs to be rethought to account for the significant loss of blocking voltage at the desired elevated operating temperatures. Indeed, device design engineers aiming to optimize a SiC IGBT should design at high temperature and not at room temperature.
Original languageEnglish
Publication statusPublished - Aug 2018
EventThe 14th International Seminar on Power Semiconductors (ISPS 2018) - Prague, Czech Republic
Duration: 29 Aug 201831 Aug 2018
http://technology.feld.cvut.cz:8080/xwiki/bin/view/ISPS2018/

Conference

ConferenceThe 14th International Seminar on Power Semiconductors (ISPS 2018)
Abbreviated titleISPS
CountryCzech Republic
CityPrague
Period29/08/1831/08/18
Internet address

Keywords

  • 4H-SiC
  • Blocking Voltage,
  • Temperature
  • IGBT
  • High-Voltage
  • Optimization.

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