>10kV 4H-SiC n-IGBTs for Elevated Temperature Environments

Samuel Perkins, Marina Antoniou, Amit K. Tiwari, Anastasios Arvanitopoulos, T. Trajkovic, Florin Udrea, Neophytos Lophitis

    Research output: Contribution to conferencePaperpeer-review


    In this work we explore the appropriate design parameters which will enable the fabrication of a >10kVn-Channel IGBT. In particular, we emphasize the reduction of device blocking capabilities for high temperature environments. Moreover, this work shows that the SiC device design optimization methodology needs to be rethought to account for the significant loss of blocking voltage at the desired elevated operating temperatures. Indeed, device design engineers aiming to optimize a SiC IGBT should design at high temperature and not at room temperature.
    Original languageEnglish
    Publication statusPublished - Aug 2018
    EventThe 14th International Seminar on Power Semiconductors (ISPS 2018) - Prague, Czech Republic
    Duration: 29 Aug 201831 Aug 2018


    ConferenceThe 14th International Seminar on Power Semiconductors (ISPS 2018)
    Abbreviated titleISPS
    Country/TerritoryCzech Republic
    Internet address


    • 4H-SiC
    • Blocking Voltage,
    • Temperature
    • IGBT
    • High-Voltage
    • Optimization.


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