>10kV 4H-SiC n-IGBTs for Elevated Temperature Environments

Samuel Perkins, Marina Antoniou, Amit K. Tiwari, Anastasios Arvanitopoulos, T. Trajkovic, Florin Udrea, Neophytos Lophitis

Research output: Contribution to conferencePaper

Abstract

In this work we explore the appropriate design parameters which will enable the fabrication of a >10kVn-Channel IGBT. In particular, we emphasize the reduction of device blocking capabilities for high temperature environments. Moreover, this work shows that the SiC device design optimization methodology needs to be rethought to account for the significant loss of blocking voltage at the desired elevated operating temperatures. Indeed, device design engineers aiming to optimize a SiC IGBT should design at high temperature and not at room temperature.
LanguageEnglish
Publication statusPublished - Aug 2018
EventThe 14th International Seminar on Power Semiconductors (ISPS 2018) - Prague, Czech Republic
Duration: 29 Aug 201831 Aug 2018
http://technology.feld.cvut.cz:8080/xwiki/bin/view/ISPS2018/

Conference

ConferenceThe 14th International Seminar on Power Semiconductors (ISPS 2018)
Abbreviated titleISPS
CountryCzech Republic
CityPrague
Period29/08/1831/08/18
Internet address

Fingerprint

Insulated gate bipolar transistors (IGBT)
Temperature
Engineers
Fabrication
Electric potential

Keywords

  • 4H-SiC
  • Blocking Voltage,
  • Temperature
  • IGBT
  • High-Voltage
  • Optimization.

Cite this

Perkins, S., Antoniou, M., K. Tiwari, A., Arvanitopoulos, A., Trajkovic, T., Udrea, F., & Lophitis, N. (2018). >10kV 4H-SiC n-IGBTs for Elevated Temperature Environments. Paper presented at The 14th International Seminar on Power Semiconductors (ISPS 2018), Prague, Czech Republic.

>10kV 4H-SiC n-IGBTs for Elevated Temperature Environments. / Perkins, Samuel; Antoniou, Marina; K. Tiwari, Amit; Arvanitopoulos, Anastasios; Trajkovic, T.; Udrea, Florin; Lophitis, Neophytos.

2018. Paper presented at The 14th International Seminar on Power Semiconductors (ISPS 2018), Prague, Czech Republic.

Research output: Contribution to conferencePaper

Perkins, S, Antoniou, M, K. Tiwari, A, Arvanitopoulos, A, Trajkovic, T, Udrea, F & Lophitis, N 2018, '>10kV 4H-SiC n-IGBTs for Elevated Temperature Environments' Paper presented at The 14th International Seminar on Power Semiconductors (ISPS 2018), Prague, Czech Republic, 29/08/18 - 31/08/18, .
Perkins S, Antoniou M, K. Tiwari A, Arvanitopoulos A, Trajkovic T, Udrea F et al. >10kV 4H-SiC n-IGBTs for Elevated Temperature Environments. 2018. Paper presented at The 14th International Seminar on Power Semiconductors (ISPS 2018), Prague, Czech Republic.
Perkins, Samuel ; Antoniou, Marina ; K. Tiwari, Amit ; Arvanitopoulos, Anastasios ; Trajkovic, T. ; Udrea, Florin ; Lophitis, Neophytos. / >10kV 4H-SiC n-IGBTs for Elevated Temperature Environments. Paper presented at The 14th International Seminar on Power Semiconductors (ISPS 2018), Prague, Czech Republic.
@conference{21513ab9219e486a89dee4a365735281,
title = ">10kV 4H-SiC n-IGBTs for Elevated Temperature Environments",
abstract = "In this work we explore the appropriate design parameters which will enable the fabrication of a >10kVn-Channel IGBT. In particular, we emphasize the reduction of device blocking capabilities for high temperature environments. Moreover, this work shows that the SiC device design optimization methodology needs to be rethought to account for the significant loss of blocking voltage at the desired elevated operating temperatures. Indeed, device design engineers aiming to optimize a SiC IGBT should design at high temperature and not at room temperature.",
keywords = "4H-SiC, Blocking Voltage,, Temperature, IGBT, High-Voltage, Optimization.",
author = "Samuel Perkins and Marina Antoniou and {K. Tiwari}, Amit and Anastasios Arvanitopoulos and T. Trajkovic and Florin Udrea and Neophytos Lophitis",
year = "2018",
month = "8",
language = "English",
note = "The 14th International Seminar on Power Semiconductors (ISPS 2018), ISPS ; Conference date: 29-08-2018 Through 31-08-2018",
url = "http://technology.feld.cvut.cz:8080/xwiki/bin/view/ISPS2018/",

}

TY - CONF

T1 - >10kV 4H-SiC n-IGBTs for Elevated Temperature Environments

AU - Perkins, Samuel

AU - Antoniou, Marina

AU - K. Tiwari, Amit

AU - Arvanitopoulos, Anastasios

AU - Trajkovic, T.

AU - Udrea, Florin

AU - Lophitis, Neophytos

PY - 2018/8

Y1 - 2018/8

N2 - In this work we explore the appropriate design parameters which will enable the fabrication of a >10kVn-Channel IGBT. In particular, we emphasize the reduction of device blocking capabilities for high temperature environments. Moreover, this work shows that the SiC device design optimization methodology needs to be rethought to account for the significant loss of blocking voltage at the desired elevated operating temperatures. Indeed, device design engineers aiming to optimize a SiC IGBT should design at high temperature and not at room temperature.

AB - In this work we explore the appropriate design parameters which will enable the fabrication of a >10kVn-Channel IGBT. In particular, we emphasize the reduction of device blocking capabilities for high temperature environments. Moreover, this work shows that the SiC device design optimization methodology needs to be rethought to account for the significant loss of blocking voltage at the desired elevated operating temperatures. Indeed, device design engineers aiming to optimize a SiC IGBT should design at high temperature and not at room temperature.

KW - 4H-SiC

KW - Blocking Voltage,

KW - Temperature

KW - IGBT

KW - High-Voltage

KW - Optimization.

UR - http://technology.feld.cvut.cz/ISPS2018

M3 - Paper

ER -