>10kV 4H-SiC n-IGBTs for Elevated Temperature Environments

Samuel Perkins, Marina Antoniou, Amit K. Tiwari, Anastasios Arvanitopoulos, T. Trajkovic, Florin Udrea, Neophytos Lophitis

Research output: Chapter in Book/Report/Conference proceedingConference proceeding

LanguageEnglish
Title of host publicationInternational Symposium on Power Semiconductors (ISPS)
Place of PublicationPrague, Czech Republic
StatePublished - Aug 2018

Keywords

  • 4H-SiC
  • Blocking Voltage,
  • Temperature
  • IGBT
  • High-Voltage
  • Optimization.

Cite this

Perkins, S., Antoniou, M., K. Tiwari, A., Arvanitopoulos, A., Trajkovic, T., Udrea, F., & Lophitis, N. (2018). >10kV 4H-SiC n-IGBTs for Elevated Temperature Environments. In International Symposium on Power Semiconductors (ISPS) Prague, Czech Republic.

>10kV 4H-SiC n-IGBTs for Elevated Temperature Environments. / Perkins, Samuel; Antoniou, Marina; K. Tiwari, Amit; Arvanitopoulos, Anastasios; Trajkovic, T.; Udrea, Florin; Lophitis, Neophytos.

International Symposium on Power Semiconductors (ISPS). Prague, Czech Republic, 2018.

Research output: Chapter in Book/Report/Conference proceedingConference proceeding

Perkins, S, Antoniou, M, K. Tiwari, A, Arvanitopoulos, A, Trajkovic, T, Udrea, F & Lophitis, N 2018, >10kV 4H-SiC n-IGBTs for Elevated Temperature Environments. in International Symposium on Power Semiconductors (ISPS). Prague, Czech Republic.
Perkins S, Antoniou M, K. Tiwari A, Arvanitopoulos A, Trajkovic T, Udrea F et al. >10kV 4H-SiC n-IGBTs for Elevated Temperature Environments. In International Symposium on Power Semiconductors (ISPS). Prague, Czech Republic. 2018.
Perkins, Samuel ; Antoniou, Marina ; K. Tiwari, Amit ; Arvanitopoulos, Anastasios ; Trajkovic, T. ; Udrea, Florin ; Lophitis, Neophytos. / >10kV 4H-SiC n-IGBTs for Elevated Temperature Environments. International Symposium on Power Semiconductors (ISPS). Prague, Czech Republic, 2018.
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title = ">10kV 4H-SiC n-IGBTs for Elevated Temperature Environments",
keywords = "4H-SiC, Blocking Voltage,, Temperature, IGBT, High-Voltage, Optimization.",
author = "Samuel Perkins and Marina Antoniou and {K. Tiwari}, Amit and Anastasios Arvanitopoulos and T. Trajkovic and Florin Udrea and Neophytos Lophitis",
year = "2018",
month = "8",
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booktitle = "International Symposium on Power Semiconductors (ISPS)",

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AU - Perkins,Samuel

AU - Antoniou,Marina

AU - K. Tiwari,Amit

AU - Arvanitopoulos,Anastasios

AU - Trajkovic,T.

AU - Udrea,Florin

AU - Lophitis,Neophytos

PY - 2018/8

Y1 - 2018/8

KW - 4H-SiC

KW - Blocking Voltage,

KW - Temperature

KW - IGBT

KW - High-Voltage

KW - Optimization.

M3 - Conference proceeding

BT - International Symposium on Power Semiconductors (ISPS)

CY - Prague, Czech Republic

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