Germanium diffusion in aluminium: connection between point defect parameters with bulk properties

Evangelia Ganniari-Papageorgiou, Michael E. Fitzpatrick, Alexander Chroneos

    Research output: Contribution to journalArticle

    6 Citations (Scopus)
    16 Downloads (Pure)

    Abstract

    The understanding of dopant diffusion and its temperature dependance is technologically important in metals. As a model system we consider germanium diffusion in aluminium. This is an appropriate system as germanium does not form intermetallic compounds in aluminium and therefore it simplifies the investigation of its diffusion behavior. Here we use experimental elastic and expansivity data to derive the germanium diffusion coefficient in aluminium in the framework of the so-called cBΩ model, between 673 and 883 K. This model is a powerful way to study point defect parameters in metals as it connects them to bulk properties, which are more easily accessible. The calculated diffusivities are in excellent agreement with the experimental data.
    Original languageEnglish
    Pages (from-to)8421-8424
    JournalJournal of Materials Science: Materials in Electronics
    Volume26
    Issue number11
    DOIs
    Publication statusPublished - 28 Jul 2015

    Bibliographical note

    The final publication is available at Springer via http://dx.doi.org/10.1007/s10854-015-3510-5

    Keywords

    • dopant diffusion

    Fingerprint Dive into the research topics of 'Germanium diffusion in aluminium: connection between point defect parameters with bulk properties'. Together they form a unique fingerprint.

  • Cite this