The understanding of dopant diffusion and its temperature dependance is technologically important in metals. As a model system we consider germanium diffusion in aluminium. This is an appropriate system as germanium does not form intermetallic compounds in aluminium and therefore it simplifies the investigation of its diffusion behavior. Here we use experimental elastic and expansivity data to derive the germanium diffusion coefficient in aluminium in the framework of the so-called cBΩ model, between 673 and 883 K. This model is a powerful way to study point defect parameters in metals as it connects them to bulk properties, which are more easily accessible. The calculated diffusivities are in excellent agreement with the experimental data.
|Journal||Journal of Materials Science: Materials in Electronics|
|Publication status||Published - 28 Jul 2015|
Bibliographical noteThe final publication is available at Springer via http://dx.doi.org/10.1007/s10854-015-3510-5
- dopant diffusion