Gate commutated thyristor with voltage independent maximum controllable current

Neophytos Lophitis; Marina Antoniou; Florin Udrea; Iulian Nistor; Munaf T. Rahimo; Martin Arnold; Tobias Wikstroem; Jan Vobecky

doi:10.1109/LED.2013.2267552

Gate commutated thyristor with voltage independent maximum controllable current

Neophytos Lophitis, Marina Antoniou, Florin Udrea, Iulian Nistor, Munaf T. Rahimo, Martin Arnold, Tobias Wikstroem, Jan Vobecky

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

In this letter, we use a novel 3-D model, earlier calibrated with experimental results on standard gate commutated thyristors (GCTs), with the aim to explain the physics behind the high-power technology (HPT) GCT, to investigate what impact this design would have on 24 mm diameter GCTs, and to clarify the mechanisms that limit safe switching at different dc-link voltages. The 3-D simulation results show that the HPT design can increase the maximum controllable current in 24 mm diameter devices beyond the realm of GCT switching, known as the hard-drive limit. It is proposed that the maximum controllable current becomes independent of the dc-link voltage for the complete range of operating voltage.

Original language	English
Article number	6547666
Pages (from-to)	954-956
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	34
Issue number	8
DOIs	https://doi.org/10.1109/LED.2013.2267552
Publication status	Published - 2013
Externally published	Yes

Keywords

Gate commutated thyristor
maximum controllable current
safe operating area
thyristor
wafer modeling

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

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10.1109/LED.2013.2267552

Cite this

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title = "Gate commutated thyristor with voltage independent maximum controllable current",

abstract = "In this letter, we use a novel 3-D model, earlier calibrated with experimental results on standard gate commutated thyristors (GCTs), with the aim to explain the physics behind the high-power technology (HPT) GCT, to investigate what impact this design would have on 24 mm diameter GCTs, and to clarify the mechanisms that limit safe switching at different dc-link voltages. The 3-D simulation results show that the HPT design can increase the maximum controllable current in 24 mm diameter devices beyond the realm of GCT switching, known as the hard-drive limit. It is proposed that the maximum controllable current becomes independent of the dc-link voltage for the complete range of operating voltage. ",

keywords = "Gate commutated thyristor, maximum controllable current, safe operating area, thyristor, wafer modeling",

author = "Neophytos Lophitis and Marina Antoniou and Florin Udrea and Iulian Nistor and Rahimo, {Munaf T.} and Martin Arnold and Tobias Wikstroem and Jan Vobecky",

year = "2013",

doi = "10.1109/LED.2013.2267552",

language = "English",

volume = "34",

pages = "954--956",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers",

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TY - JOUR

T1 - Gate commutated thyristor with voltage independent maximum controllable current

AU - Lophitis, Neophytos

AU - Antoniou, Marina

AU - Udrea, Florin

AU - Nistor, Iulian

AU - Rahimo, Munaf T.

AU - Arnold, Martin

AU - Wikstroem, Tobias

AU - Vobecky, Jan

PY - 2013

Y1 - 2013

N2 - In this letter, we use a novel 3-D model, earlier calibrated with experimental results on standard gate commutated thyristors (GCTs), with the aim to explain the physics behind the high-power technology (HPT) GCT, to investigate what impact this design would have on 24 mm diameter GCTs, and to clarify the mechanisms that limit safe switching at different dc-link voltages. The 3-D simulation results show that the HPT design can increase the maximum controllable current in 24 mm diameter devices beyond the realm of GCT switching, known as the hard-drive limit. It is proposed that the maximum controllable current becomes independent of the dc-link voltage for the complete range of operating voltage.

AB - In this letter, we use a novel 3-D model, earlier calibrated with experimental results on standard gate commutated thyristors (GCTs), with the aim to explain the physics behind the high-power technology (HPT) GCT, to investigate what impact this design would have on 24 mm diameter GCTs, and to clarify the mechanisms that limit safe switching at different dc-link voltages. The 3-D simulation results show that the HPT design can increase the maximum controllable current in 24 mm diameter devices beyond the realm of GCT switching, known as the hard-drive limit. It is proposed that the maximum controllable current becomes independent of the dc-link voltage for the complete range of operating voltage.

KW - Gate commutated thyristor

KW - maximum controllable current

KW - safe operating area

KW - thyristor

KW - wafer modeling

U2 - 10.1109/LED.2013.2267552

DO - 10.1109/LED.2013.2267552

M3 - Article

AN - SCOPUS:84881022621

SN - 0741-3106

VL - 34

SP - 954

EP - 956

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 8

M1 - 6547666

ER -

Gate commutated thyristor with voltage independent maximum controllable current

Abstract

Keywords

ASJC Scopus subject areas

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