GaN-HEMT dynamic ON-state resistance characterisation and modelling

Ke Li; Paul Evans; Mark Johnson

doi:10.1109/COMPEL.2016.7556732

GaN-HEMT dynamic ON-state resistance characterisation and modelling

Ke Li, Paul Evans, Mark Johnson

University of Nottingham

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding › peer-review

34 Citations (Scopus)

Abstract

GaN-HEMTs suffer from trapping effects which might increase device ON-state resistance (R_DS(on)) values. Thus, dynamic R_DS(on) of a commercial GaN-HEMT is characterized at different bias voltages in the paper by a proposed measurement circuit. Based on the measurement reaults, a behavioural model is proposed to represent device dynamic R_DS(on) values, in which trapping and detrapping time constant is represented by a series of RC network. The model is simulated in PSPICE, of which the simulation results of R_DS(on) values are compared and validated with the measurement when device switches in a power converter with different duty cycles and switching voltages. The results show that R_DS(on) values of this device would increase due to trapping effects.

Original language	English
Title of host publication	2016 IEEE 17th Workshop on Control and Modeling for Power Electronics, COMPEL 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781509018154
DOIs	https://doi.org/10.1109/COMPEL.2016.7556732
Publication status	Published - 1 Sept 2016
Externally published	Yes
Event	17th IEEE Workshop on Control and Modeling for Power Electronics, COMPEL 2016 - Trondheim, Norway Duration: 27 Jun 2016 → 30 Jun 2016

Publication series

Name	2016 IEEE 17th Workshop on Control and Modeling for Power Electronics, COMPEL 2016

Conference

Conference	17th IEEE Workshop on Control and Modeling for Power Electronics, COMPEL 2016
Country/Territory	Norway
City	Trondheim
Period	27/06/16 → 30/06/16

Funding

The authors would like to thank UK Engineering and Physical Sciences Research Council (EPSRC) for the financial support under EP/K014471/1 and all the partners of the project Silicon Compatible GaN Power Electronics for technical discussions.

Keywords

Behavioural model
Dynamic ON-state resistance
GaN-HEMT
Power semiconductor device characterisation
Power semiconductor device modelling

ASJC Scopus subject areas

Energy Engineering and Power Technology
Electrical and Electronic Engineering
Control and Optimization
Modelling and Simulation

Access to Document

10.1109/COMPEL.2016.7556732

Cite this

Li, K., Evans, P., & Johnson, M. (2016). GaN-HEMT dynamic ON-state resistance characterisation and modelling. In 2016 IEEE 17th Workshop on Control and Modeling for Power Electronics, COMPEL 2016 Article 7556732 (2016 IEEE 17th Workshop on Control and Modeling for Power Electronics, COMPEL 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/COMPEL.2016.7556732

GaN-HEMT dynamic ON-state resistance characterisation and modelling. / Li, Ke; Evans, Paul; Johnson, Mark.
2016 IEEE 17th Workshop on Control and Modeling for Power Electronics, COMPEL 2016. Institute of Electrical and Electronics Engineers Inc., 2016. 7556732 (2016 IEEE 17th Workshop on Control and Modeling for Power Electronics, COMPEL 2016).

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding › peer-review

Li, K, Evans, P & Johnson, M 2016, GaN-HEMT dynamic ON-state resistance characterisation and modelling. in 2016 IEEE 17th Workshop on Control and Modeling for Power Electronics, COMPEL 2016., 7556732, 2016 IEEE 17th Workshop on Control and Modeling for Power Electronics, COMPEL 2016, Institute of Electrical and Electronics Engineers Inc., 17th IEEE Workshop on Control and Modeling for Power Electronics, COMPEL 2016, Trondheim, Norway, 27/06/16. https://doi.org/10.1109/COMPEL.2016.7556732

Li K, Evans P, Johnson M. GaN-HEMT dynamic ON-state resistance characterisation and modelling. In 2016 IEEE 17th Workshop on Control and Modeling for Power Electronics, COMPEL 2016. Institute of Electrical and Electronics Engineers Inc. 2016. 7556732. (2016 IEEE 17th Workshop on Control and Modeling for Power Electronics, COMPEL 2016). doi: 10.1109/COMPEL.2016.7556732

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title = "GaN-HEMT dynamic ON-state resistance characterisation and modelling",

abstract = "GaN-HEMTs suffer from trapping effects which might increase device ON-state resistance (RDS(on)) values. Thus, dynamic RDS(on) of a commercial GaN-HEMT is characterized at different bias voltages in the paper by a proposed measurement circuit. Based on the measurement reaults, a behavioural model is proposed to represent device dynamic RDS(on) values, in which trapping and detrapping time constant is represented by a series of RC network. The model is simulated in PSPICE, of which the simulation results of RDS(on) values are compared and validated with the measurement when device switches in a power converter with different duty cycles and switching voltages. The results show that RDS(on) values of this device would increase due to trapping effects.",

keywords = "Behavioural model, Dynamic ON-state resistance, GaN-HEMT, Power semiconductor device characterisation, Power semiconductor device modelling",

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AB - GaN-HEMTs suffer from trapping effects which might increase device ON-state resistance (RDS(on)) values. Thus, dynamic RDS(on) of a commercial GaN-HEMT is characterized at different bias voltages in the paper by a proposed measurement circuit. Based on the measurement reaults, a behavioural model is proposed to represent device dynamic RDS(on) values, in which trapping and detrapping time constant is represented by a series of RC network. The model is simulated in PSPICE, of which the simulation results of RDS(on) values are compared and validated with the measurement when device switches in a power converter with different duty cycles and switching voltages. The results show that RDS(on) values of this device would increase due to trapping effects.

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ER -

GaN-HEMT dynamic ON-state resistance characterisation and modelling

Abstract

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Keywords

ASJC Scopus subject areas

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