@inproceedings{92d968b2f89b49798734b1a08f1fce2a,
title = "GaN-HEMT dynamic ON-state resistance characterisation and modelling",
abstract = "GaN-HEMTs suffer from trapping effects which might increase device ON-state resistance (RDS(on)) values. Thus, dynamic RDS(on) of a commercial GaN-HEMT is characterized at different bias voltages in the paper by a proposed measurement circuit. Based on the measurement reaults, a behavioural model is proposed to represent device dynamic RDS(on) values, in which trapping and detrapping time constant is represented by a series of RC network. The model is simulated in PSPICE, of which the simulation results of RDS(on) values are compared and validated with the measurement when device switches in a power converter with different duty cycles and switching voltages. The results show that RDS(on) values of this device would increase due to trapping effects.",
keywords = "Behavioural model, Dynamic ON-state resistance, GaN-HEMT, Power semiconductor device characterisation, Power semiconductor device modelling",
author = "Ke Li and Paul Evans and Mark Johnson",
year = "2016",
month = sep,
day = "1",
doi = "10.1109/COMPEL.2016.7556732",
language = "English",
series = "2016 IEEE 17th Workshop on Control and Modeling for Power Electronics, COMPEL 2016",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2016 IEEE 17th Workshop on Control and Modeling for Power Electronics, COMPEL 2016",
address = "United States",
note = "17th IEEE Workshop on Control and Modeling for Power Electronics, COMPEL 2016 ; Conference date: 27-06-2016 Through 30-06-2016",
}