GaN-HEMT dynamic ON-state resistance characterisation and modelling

Ke Li, Paul Evans, Mark Johnson

Research output: Chapter in Book/Report/Conference proceedingConference proceeding

18 Citations (Scopus)

Abstract

GaN-HEMTs suffer from trapping effects which might increase device ON-state resistance (RDS(on)) values. Thus, dynamic RDS(on) of a commercial GaN-HEMT is characterized at different bias voltages in the paper by a proposed measurement circuit. Based on the measurement reaults, a behavioural model is proposed to represent device dynamic RDS(on) values, in which trapping and detrapping time constant is represented by a series of RC network. The model is simulated in PSPICE, of which the simulation results of RDS(on) values are compared and validated with the measurement when device switches in a power converter with different duty cycles and switching voltages. The results show that RDS(on) values of this device would increase due to trapping effects.

Original languageEnglish
Title of host publication2016 IEEE 17th Workshop on Control and Modeling for Power Electronics, COMPEL 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509018154
DOIs
Publication statusPublished - 1 Sep 2016
Externally publishedYes
Event17th IEEE Workshop on Control and Modeling for Power Electronics, COMPEL 2016 - Trondheim, Norway
Duration: 27 Jun 201630 Jun 2016

Publication series

Name2016 IEEE 17th Workshop on Control and Modeling for Power Electronics, COMPEL 2016

Conference

Conference17th IEEE Workshop on Control and Modeling for Power Electronics, COMPEL 2016
CountryNorway
CityTrondheim
Period27/06/1630/06/16

Keywords

  • Behavioural model
  • Dynamic ON-state resistance
  • GaN-HEMT
  • Power semiconductor device characterisation
  • Power semiconductor device modelling

ASJC Scopus subject areas

  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering
  • Control and Optimization
  • Modelling and Simulation

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  • Cite this

    Li, K., Evans, P., & Johnson, M. (2016). GaN-HEMT dynamic ON-state resistance characterisation and modelling. In 2016 IEEE 17th Workshop on Control and Modeling for Power Electronics, COMPEL 2016 [7556732] (2016 IEEE 17th Workshop on Control and Modeling for Power Electronics, COMPEL 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/COMPEL.2016.7556732