GaN Current Transducers for Harsh Environments

Soroush Faramehr, Nebojsa Jankovic, Petar Igic

Research output: Chapter in Book/Report/Conference proceedingConference proceeding

Abstract

This paper reports on the 1st gated gallium nitride (GaN) magnetic sensitive high electron mobility transistors (MagHEMTs) operation and their key manufacturing steps. The output characteristic, change of sensitivity with respect to biasing conditions and ambient temperatures are presented here. The sensitivities of 19 %/T and 4.68 %/T are reported as a response of the GaN MagHEMTs to uniform magnetic field of 30 mT at ambient temperatures of 25 °C and 175 °C, respectively.
Original languageEnglish
Title of host publication20th International Conference on Solid State Sensors, Actuators and Microsystems & Eurosensors XXXIII (Transducers and Eurosensors XXXIII)
PublisherIEEE
Pages1985-1988
Number of pages4
ISBN (Electronic)978-1-5386-8104-6
ISBN (Print)978-1-5386-8105-3
DOIs
Publication statusPublished - 22 Aug 2019
Event20th International Conference on Solid-State Sensors, Actuators and Microsystems - Berlin, Germany
Duration: 23 Jun 201927 Jun 2019

Conference

Conference20th International Conference on Solid-State Sensors, Actuators and Microsystems
CountryGermany
CityBerlin
Period23/06/1927/06/19

Keywords

  • GaN
  • MagHEMT

ASJC Scopus subject areas

  • Process Chemistry and Technology
  • Spectroscopy
  • Electrical and Electronic Engineering
  • Mechanical Engineering
  • Electronic, Optical and Magnetic Materials
  • Control and Optimization
  • Instrumentation

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