GaN Current Transducers for Harsh Environments

Soroush Faramehr; Nebojsa Jankovic; Petar Igic

doi:10.1109/TRANSDUCERS.2019.8808193

GaN Current Transducers for Harsh Environments

Soroush Faramehr, Nebojsa Jankovic, Petar Igic

University of Niš

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding › peer-review

2 Citations (Scopus)

Abstract

This paper reports on the 1st gated gallium nitride (GaN) magnetic sensitive high electron mobility transistors (MagHEMTs) operation and their key manufacturing steps. The output characteristic, change of sensitivity with respect to biasing conditions and ambient temperatures are presented here. The sensitivities of 19 %/T and 4.68 %/T are reported as a response of the GaN MagHEMTs to uniform magnetic field of 30 mT at ambient temperatures of 25 °C and 175 °C, respectively.

Original language	English
Title of host publication	20th International Conference on Solid State Sensors, Actuators and Microsystems & Eurosensors XXXIII (Transducers and Eurosensors XXXIII)
Publisher	IEEE
Pages	1985-1988
Number of pages	4
ISBN (Electronic)	978-1-5386-8104-6
ISBN (Print)	978-1-5386-8105-3
DOIs	https://doi.org/10.1109/TRANSDUCERS.2019.8808193
Publication status	Published - 22 Aug 2019
Event	20th International Conference on Solid-State Sensors, Actuators and Microsystems - Berlin, Germany Duration: 23 Jun 2019 → 27 Jun 2019

Conference

Conference	20th International Conference on Solid-State Sensors, Actuators and Microsystems
Country/Territory	Germany
City	Berlin
Period	23/06/19 → 27/06/19

Keywords

GaN
MagHEMT

ASJC Scopus subject areas

Process Chemistry and Technology
Spectroscopy
Electrical and Electronic Engineering
Mechanical Engineering
Electronic, Optical and Magnetic Materials
Control and Optimization
Instrumentation

Access to Document

10.1109/TRANSDUCERS.2019.8808193

Cite this

Faramehr, S, Jankovic, N & Igic, P 2019, GaN Current Transducers for Harsh Environments. in 20th International Conference on Solid State Sensors, Actuators and Microsystems & Eurosensors XXXIII (Transducers and Eurosensors XXXIII). IEEE, pp. 1985-1988, 20th International Conference on Solid-State Sensors, Actuators and Microsystems, Berlin, Germany, 23/06/19. https://doi.org/10.1109/TRANSDUCERS.2019.8808193

@inproceedings{e6314d2968a243a990fcb5ffa21e8e9e,

title = "GaN Current Transducers for Harsh Environments",

abstract = "This paper reports on the 1st gated gallium nitride (GaN) magnetic sensitive high electron mobility transistors (MagHEMTs) operation and their key manufacturing steps. The output characteristic, change of sensitivity with respect to biasing conditions and ambient temperatures are presented here. The sensitivities of 19 %/T and 4.68 %/T are reported as a response of the GaN MagHEMTs to uniform magnetic field of 30 mT at ambient temperatures of 25 °C and 175 °C, respectively.",

keywords = "GaN, MagHEMT",

author = "Soroush Faramehr and Nebojsa Jankovic and Petar Igic",

year = "2019",

month = aug,

day = "22",

doi = "10.1109/TRANSDUCERS.2019.8808193",

language = "English",

isbn = "978-1-5386-8105-3",

pages = "1985--1988",

booktitle = "20th International Conference on Solid State Sensors, Actuators and Microsystems & Eurosensors XXXIII (Transducers and Eurosensors XXXIII)",

publisher = "IEEE",

address = "United States",

note = "20th International Conference on Solid-State Sensors, Actuators and Microsystems ; Conference date: 23-06-2019 Through 27-06-2019",

}

TY - GEN

T1 - GaN Current Transducers for Harsh Environments

AU - Faramehr, Soroush

AU - Jankovic, Nebojsa

AU - Igic, Petar

PY - 2019/8/22

Y1 - 2019/8/22

N2 - This paper reports on the 1st gated gallium nitride (GaN) magnetic sensitive high electron mobility transistors (MagHEMTs) operation and their key manufacturing steps. The output characteristic, change of sensitivity with respect to biasing conditions and ambient temperatures are presented here. The sensitivities of 19 %/T and 4.68 %/T are reported as a response of the GaN MagHEMTs to uniform magnetic field of 30 mT at ambient temperatures of 25 °C and 175 °C, respectively.

AB - This paper reports on the 1st gated gallium nitride (GaN) magnetic sensitive high electron mobility transistors (MagHEMTs) operation and their key manufacturing steps. The output characteristic, change of sensitivity with respect to biasing conditions and ambient temperatures are presented here. The sensitivities of 19 %/T and 4.68 %/T are reported as a response of the GaN MagHEMTs to uniform magnetic field of 30 mT at ambient temperatures of 25 °C and 175 °C, respectively.

KW - GaN

KW - MagHEMT

UR - http://www.scopus.com/inward/record.url?scp=85071901980&partnerID=8YFLogxK

U2 - 10.1109/TRANSDUCERS.2019.8808193

DO - 10.1109/TRANSDUCERS.2019.8808193

M3 - Conference proceeding

SN - 978-1-5386-8105-3

SP - 1985

EP - 1988

BT - 20th International Conference on Solid State Sensors, Actuators and Microsystems & Eurosensors XXXIII (Transducers and Eurosensors XXXIII)

PB - IEEE

T2 - 20th International Conference on Solid-State Sensors, Actuators and Microsystems

Y2 - 23 June 2019 through 27 June 2019

ER -

GaN Current Transducers for Harsh Environments

Abstract

Conference

Keywords

ASJC Scopus subject areas

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