GaN Current Transducers for Harsh Environments

Soroush Faramehr, Nebojsa Jankovic, Petar Igic

    Research output: Chapter in Book/Report/Conference proceedingConference proceedingpeer-review

    2 Citations (Scopus)


    This paper reports on the 1st gated gallium nitride (GaN) magnetic sensitive high electron mobility transistors (MagHEMTs) operation and their key manufacturing steps. The output characteristic, change of sensitivity with respect to biasing conditions and ambient temperatures are presented here. The sensitivities of 19 %/T and 4.68 %/T are reported as a response of the GaN MagHEMTs to uniform magnetic field of 30 mT at ambient temperatures of 25 °C and 175 °C, respectively.
    Original languageEnglish
    Title of host publication20th International Conference on Solid State Sensors, Actuators and Microsystems & Eurosensors XXXIII (Transducers and Eurosensors XXXIII)
    Number of pages4
    ISBN (Electronic)978-1-5386-8104-6
    ISBN (Print)978-1-5386-8105-3
    Publication statusPublished - 22 Aug 2019
    Event20th International Conference on Solid-State Sensors, Actuators and Microsystems - Berlin, Germany
    Duration: 23 Jun 201927 Jun 2019


    Conference20th International Conference on Solid-State Sensors, Actuators and Microsystems


    • GaN
    • MagHEMT

    ASJC Scopus subject areas

    • Process Chemistry and Technology
    • Spectroscopy
    • Electrical and Electronic Engineering
    • Mechanical Engineering
    • Electronic, Optical and Magnetic Materials
    • Control and Optimization
    • Instrumentation


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