Exponential ADE Solution Based Compact Model of Planar Injection Enhanced IGBT Dedicated to Robust Power Converter Design

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5 Citations (Scopus)

Abstract

The compact model of an injection enhanced insulated gate bipolar transistors based on the exponential solution of the ambipolar diffusion equation is presented in this paper. To model plasma carrier distribution, an exponential shape function is used, and in steady-state forward bias operation, the plasma carrier concentration has a distribution of catenary form with just two exponential basis functions, while in transient operation, more complex profiles can be approximated using a number of exponential basis functions with a range of decay length parameters, shorter than the steady state ones. The device model developed has been implemented in Saber circuit simulator and successfully tested against complete set of high current, high voltage experimental results.
Original languageEnglish
Article number4
Pages (from-to)1914 - 1924
Number of pages11
JournalIEEE Transactions on Power Electronics
Volume30
Issue number4
DOIs
Publication statusPublished - 12 Jun 2014

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Insulated gate bipolar transistors (IGBT)
Power converters
Plasmas
Carrier concentration
Simulators
Networks (circuits)
Electric potential

Keywords

  • power electronics
  • IGBT
  • Inverters
  • Modelling and analysis

ASJC Scopus subject areas

  • Engineering(all)

Cite this

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title = "Exponential ADE Solution Based Compact Model of Planar Injection Enhanced IGBT Dedicated to Robust Power Converter Design",
abstract = "The compact model of an injection enhanced insulated gate bipolar transistors based on the exponential solution of the ambipolar diffusion equation is presented in this paper. To model plasma carrier distribution, an exponential shape function is used, and in steady-state forward bias operation, the plasma carrier concentration has a distribution of catenary form with just two exponential basis functions, while in transient operation, more complex profiles can be approximated using a number of exponential basis functions with a range of decay length parameters, shorter than the steady state ones. The device model developed has been implemented in Saber circuit simulator and successfully tested against complete set of high current, high voltage experimental results.",
keywords = "power electronics, IGBT, Inverters, Modelling and analysis",
author = "Petar Igic",
year = "2014",
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language = "English",
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pages = "1914 -- 1924",
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AU - Igic, Petar

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N2 - The compact model of an injection enhanced insulated gate bipolar transistors based on the exponential solution of the ambipolar diffusion equation is presented in this paper. To model plasma carrier distribution, an exponential shape function is used, and in steady-state forward bias operation, the plasma carrier concentration has a distribution of catenary form with just two exponential basis functions, while in transient operation, more complex profiles can be approximated using a number of exponential basis functions with a range of decay length parameters, shorter than the steady state ones. The device model developed has been implemented in Saber circuit simulator and successfully tested against complete set of high current, high voltage experimental results.

AB - The compact model of an injection enhanced insulated gate bipolar transistors based on the exponential solution of the ambipolar diffusion equation is presented in this paper. To model plasma carrier distribution, an exponential shape function is used, and in steady-state forward bias operation, the plasma carrier concentration has a distribution of catenary form with just two exponential basis functions, while in transient operation, more complex profiles can be approximated using a number of exponential basis functions with a range of decay length parameters, shorter than the steady state ones. The device model developed has been implemented in Saber circuit simulator and successfully tested against complete set of high current, high voltage experimental results.

KW - power electronics

KW - IGBT

KW - Inverters

KW - Modelling and analysis

U2 - 10.1109/TPEL.2014.2330655

DO - 10.1109/TPEL.2014.2330655

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VL - 30

SP - 1914

EP - 1924

JO - IEEE Transactions on Power Electronics

JF - IEEE Transactions on Power Electronics

SN - 0885-8993

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