Exponential ADE Solution Based Compact Model of Planar Injection Enhanced IGBT Dedicated to Robust Power Converter Design

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    8 Citations (Scopus)

    Abstract

    The compact model of an injection enhanced insulated gate bipolar transistors based on the exponential solution of the ambipolar diffusion equation is presented in this paper. To model plasma carrier distribution, an exponential shape function is used, and in steady-state forward bias operation, the plasma carrier concentration has a distribution of catenary form with just two exponential basis functions, while in transient operation, more complex profiles can be approximated using a number of exponential basis functions with a range of decay length parameters, shorter than the steady state ones. The device model developed has been implemented in Saber circuit simulator and successfully tested against complete set of high current, high voltage experimental results.
    Original languageEnglish
    Article number4
    Pages (from-to)1914 - 1924
    Number of pages11
    JournalIEEE Transactions on Power Electronics
    Volume30
    Issue number4
    DOIs
    Publication statusPublished - 12 Jun 2014

    Keywords

    • power electronics
    • IGBT
    • Inverters
    • Modelling and analysis

    ASJC Scopus subject areas

    • Engineering(all)

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