Experimentally validated three dimensional GCT wafer level simulations

N. Lophitis, M. Antoniou, F. Udrea, I. Nistor, M. Arnold, T. Wikström, J. Vobecky

Research output: Chapter in Book/Report/Conference proceedingConference proceedingpeer-review

10 Citations (Scopus)
35 Downloads (Pure)


In this paper we present a wafer level three-dimensional simulation model of the Gate Commutated Thyristor (GCT) under inductive switching conditions. The simulations are validated by extensive experimental measurements. To the authors' knowledge such a complex simulation domain has not been used so far. This method allows the in depth study of large area devices such as GCTs, Gate Turn Off Thyristors (GTOs) and Phase Control Thyristors (PCTs). The model captures complex phenomena, such as current filamentation including subsequent failure, which allow us to predict the Maximum Controllable turn-off Current (MCC) and the Safe Operating Area (SOA) previously impossible using 2D distributed models.

Original languageEnglish
Title of host publicationProceedings of the 2012 24th International Symposium on Power Semiconductor Devices and ICs, ISPSD'12
Number of pages4
ISBN (Print)9781457715952
Publication statusPublished - 2012
Externally publishedYes
Event24th International Symposium on Power Semiconductor Devices and ICs - Bruges, Belgium
Duration: 3 Jun 20127 Jun 2012
Conference number: 24


Conference24th International Symposium on Power Semiconductor Devices and ICs
Abbreviated titleISPSD'12

Bibliographical note

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ASJC Scopus subject areas

  • Engineering(all)


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