TY - JOUR
T1 - Experimental investigation of metallic thin film modification of nickel substrates for chemical vapor deposition growth of single layer graphene at low temperature
AU - Aminalragia Giamini, Sigiava
AU - Marquez-Velasco, Jose
AU - Sakellis, Ilias
AU - Tsipas, Polychronis
AU - Kelaidis, Nikolaos
AU - Tsoutsou, Dimitra
AU - Boukos, Nikolaos
AU - Kantarelou, Vasiliki
AU - Xenogiannopoulou, Evangelia
AU - Speliotis, Thanassis
AU - Aretouli, Kleopatra
AU - Kordas, George
AU - Dimoulas, Athanasios
N1 - This paper is not available in Pure. There is a 24 month embargo period.
PY - 2016/11/1
Y1 - 2016/11/1
N2 - Lowering the growth temperature of single layer graphene by chemical vapor deposition (CVD) is important for its real-life application and mass production. Doing this without compromising quality requires advances in catalytic substrates. It is shown in this work that deposition of Zn and Bi metals modify the surface of nickel suppressing the uncontrollable growth of multiple layers of graphene. As a result, single layer graphene is obtained by CVD at 600 °C with minimum amount of defects, showing substantial improvement over bare Ni. In contrast, Cu, and Mo suppress graphene growth. We also show that graphene grown with our method has a defect density that is strongly dependent on the roughness of the original nickel foil. Good quality or highly defective holey single layer graphene can be grown at will by selecting a smooth or rough foil substrate respectively.
AB - Lowering the growth temperature of single layer graphene by chemical vapor deposition (CVD) is important for its real-life application and mass production. Doing this without compromising quality requires advances in catalytic substrates. It is shown in this work that deposition of Zn and Bi metals modify the surface of nickel suppressing the uncontrollable growth of multiple layers of graphene. As a result, single layer graphene is obtained by CVD at 600 °C with minimum amount of defects, showing substantial improvement over bare Ni. In contrast, Cu, and Mo suppress graphene growth. We also show that graphene grown with our method has a defect density that is strongly dependent on the roughness of the original nickel foil. Good quality or highly defective holey single layer graphene can be grown at will by selecting a smooth or rough foil substrate respectively.
KW - CVD
KW - Graphene
KW - Low-temperature
KW - Nickel
KW - Surface-modification
U2 - 10.1016/j.apsusc.2016.05.168
DO - 10.1016/j.apsusc.2016.05.168
M3 - Article
AN - SCOPUS:84973577916
SN - 0169-4332
VL - 385
SP - 554
EP - 561
JO - Applied Surface Science
JF - Applied Surface Science
ER -