Experimental investigation of metallic thin film modification of nickel substrates for chemical vapor deposition growth of single layer graphene at low temperature

Sigiava Aminalragia Giamini, Jose Marquez-Velasco, Ilias Sakellis, Polychronis Tsipas, Nikolaos Kelaidis, Dimitra Tsoutsou, Nikolaos Boukos, Vasiliki Kantarelou, Evangelia Xenogiannopoulou, Thanassis Speliotis, Kleopatra Aretouli, George Kordas, Athanasios Dimoulas

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Lowering the growth temperature of single layer graphene by chemical vapor deposition (CVD) is important for its real-life application and mass production. Doing this without compromising quality requires advances in catalytic substrates. It is shown in this work that deposition of Zn and Bi metals modify the surface of nickel suppressing the uncontrollable growth of multiple layers of graphene. As a result, single layer graphene is obtained by CVD at 600 °C with minimum amount of defects, showing substantial improvement over bare Ni. In contrast, Cu, and Mo suppress graphene growth. We also show that graphene grown with our method has a defect density that is strongly dependent on the roughness of the original nickel foil. Good quality or highly defective holey single layer graphene can be grown at will by selecting a smooth or rough foil substrate respectively.

Original languageEnglish
Pages (from-to)554-561
Number of pages8
JournalApplied Surface Science
Volume385
Early online date2 Jun 2016
DOIs
Publication statusPublished - 1 Nov 2016
Externally publishedYes

Bibliographical note

This paper is not available in Pure. There is a 24 month embargo period.

Keywords

  • CVD
  • Graphene
  • Low-temperature
  • Nickel
  • Surface-modification

ASJC Scopus subject areas

  • Surfaces, Coatings and Films

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