Experimental demonstration of the p-ring FS+ Trench IGBT concept: A new design for minimizing the conduction losses

M. Antoniou, Neophytos Lophitis, F. Udrea, F. Bauer, I. Nistor, M. Bellini, M. Rahimo

Research output: Contribution to conferencePaper

12 Citations (Scopus)

Abstract

A new IGBT type structure, namely the p-ring FS+ Trench IGBT, with improved performance has been demonstrated. The improvement has been achieved through the utilization of p doped buried layers (p-rings) which allows for the simultaneous increase in the n enhancement layer doping concentration above the conventional levels without compromising the device breakdown rating. This unique lateral charge compensation approach is demonstrated to be highly effective in lowering the on-state losses. The experimental results show a 20% reduction in the on-state losses for a 1.7kV device.
Original languageEnglish
Pages21-24
DOIs
Publication statusPublished - 2015
EventIEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD) - , Hong Kong
Duration: 10 May 201514 May 2015

Conference

ConferenceIEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)
CountryHong Kong
Period10/05/1514/05/15

Bibliographical note

The full text is currently unavailable on the repository.

Keywords

  • buried layers
  • charge compensation
  • insulated gate bipolar transistors
  • losses
  • IGBT type structure
  • conduction losses minimization design
  • device breakdown rating
  • enhancement layer doping concentration
  • experimental demonstration
  • lateral charge compensation approach
  • on-state losses
  • p doped buried layer utilization
  • p-ring FS+ trench IGBT concept
  • performance improvement
  • voltage 1.7 kV
  • Insulated Gate Bipolar Transistor (IGBT)
  • superjunction power MOSFET
  • technology trade-off
  • Cathodes
  • Doping
  • Electric breakdown
  • Insulated gate bipolar transistors
  • Logic gates
  • Performance evaluation
  • Switches

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  • Cite this

    Antoniou, M., Lophitis, N., Udrea, F., Bauer, F., Nistor, I., Bellini, M., & Rahimo, M. (2015). Experimental demonstration of the p-ring FS+ Trench IGBT concept: A new design for minimizing the conduction losses. 21-24. Paper presented at IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), Hong Kong. https://doi.org/10.1109/ISPSD.2015.7123379